M393T2863AZA-CC

M393T2863AZ3-CD5 SAMSUNG | Alldatasheet

Document overview

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Technical content

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM * Samsung Electronics reserves the right to change products or specification without notice. INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb A-die 72-bit ECC

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Table of Contents 14.2 128Mbx8/256Mbx4 based 256Mx72 Module(2/1 Ranks)

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM

Revision History

Revision Month Year History

1.0 July 2005 - Initial Release

1.1 Aug. 2005 - Revised IDD Current Values 1.2 Sep. 2005 - Revised the Ordering Information

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered DIMM Ordering Information

Features

Note: “Z” of Part number(11th digit) stand for Lead-free products. Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products. Note: "A" of Part number(12th digit) stand for Parity Register products. Part Number Density Organization Component Composition Number of Rank Parity Register Height M393T2863AZ3-CD5/CC 1GB 128Mx72 128Mx8(K4T1G084QA)*9EA 1 X 30mm M393T2863AZA-CE6/D5/CC 1GB 128Mx72 128Mx8(K4T1G084QA)*9EA 1 O 30mm M393T5663AZ3-CD5/CC 2GB 256Mx72 128Mx8(K4T1G084QA)*18EA 2 X 30mm M393T5663AZA-CE6/D5/CC 2GB 256Mx72 128Mx8(K4T1G084QA)*18EA 2 O 30mm M393T5660AZ3-CD5/CC 2GB 256Mx72 256Mx4(K4T1G044QA)*18EA 1 X 30mm M393T5660AZA-CE6/D5/CC 2GB 256Mx72 256Mx4(K4T1G044QA)*18EA 1 O 30mm M393T5168AZ0-CD5/CC 4GB 512Mx72 st.512Mx4(K4T2G064QA)*18EA 2 X 30mm M393T5166AZA-CE6/D5/CC 4GB 512Mx72 st.512Mx4(K4T2G264QA)*18EA 2 O 30mm

• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• V DDQ = 1.8V ± 0.1V
• 200 MHz f CK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin
• 8 B a n k s
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8 (Inte rleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectabl e values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a T CASE 85°C, 3.9us at 85°C < TCASE < 95 °C - support High Temperature Self-Refresh rate enable feature
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 68ball FBGA - 256Mx4/128Mx8, 56ball BGA - st.512Mbx4
• All of Lead-free products are compliant for RoHS Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.. E6(DDR2-667) D5(DDR2-533) CC(DDR2-400) Unit Speed@CL3 400 400 400 Mbps Speed@CL4 533 533 400 Mbps Speed@CL5 667 533 -M b p s CL-tRCD-tRP 5-5-5 4-4-4 3-3-3 CK Address Configuration Organization Row Address Column Address Bank Address Auto Precharge 256Mx4(1Gb) based Module A0-A13 A0-A9, A11 BA0-BA2 A10 128Mx8(1Gb) based Module A0-A13 A0-A9 BA0-BA2 A10

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM NC = No Connect, RFU = Reserved for Future Use 1. RESET (Pin 18) is connected to both OE of PLL and Reset of register. 2. The Test pin (Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules (DIMMs) 3. NC/Err_Out ( Pin 55) and NC/Par_In (Pin 68) are for optional function to check address and command parity. 4. CKE1,S 1 Pin is used for double side Registered DIMM. Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1V REF 121 V SS 31 DQ19 151 V SS 61 A4 181 V DDQ 91 V SS 211 DM5/DQS14 2V SS 122 DQ4 32 V SS 152 DQ28 62 V DDQ 182 A3 92 DQS 5 212 NC/DQS 14

3 DQ0 123 DQ5 33 DQ24 153 DQ29 63 A2 183 A1 93 DQS5 213 V SS

4D Q 1 1 2 4 V SS 34 DQ25 154 V SS 64 V DD 184 V DD 94 V SS 214 DQ46 5V SS 125 DM0/DQS9 35 V SS 155 DM3/DQS12 KEY 95 DQ42 215 DQ47 6D Q S 0 126 NC/DQS 93 6 D Q S 3 156 NC/DQS 12 65 V SS 185 CK0 96 DQ43 216 V SS 7D Q S 0 1 2 7V SS 37 DQS3 157 V SS 66 V SS 186 CK 09 7V SS 217 DQ52 8V SS 128 DQ6 38 V SS 158 DQ30 67 V DD 187 V DD 98 DQ48 218 DQ53

9 DQ2 129 DQ7 39 DQ26 159 DQ31 68 NC/Par_In 188 A0 99 DQ49 219 V SS

10 DQ3 130 V SS 40 DQ27 160 V SS 69 V DD 189 V DD 100 V SS 220 RFU

11 V SS 131 DQ12 41 V SS 161 CB4 70 A10/AP 190 BA1 101 SA2 221 RFU

12 DQ8 132 DQ13 42 CB0 162 CB5 71 BA0 191 V DDQ 102 NC(TEST) 222 V SS

13 DQ9 133 V SS 43 CB1 163 V SS 72 V DDQ 192 RAS 103 V SS 223 DM6/DQS15

14 V SS 134 DM1/DQS10 44 V SS 164 DM8/DQS17 73 WE 193 S 01 0 4 D Q S 6 224 NC/DQS 15

15 DQS 1 135 NC/DQS 10 45 DQS 8 165 NC/DQS 17 74 CAS 194 V DDQ 105 DQS6 225 V SS

16 DQS1 136 V SS 46 DQS8 166 V SS 75 V DDQ 195 ODT0 106 V SS 226 DQ54

17 V SS 137 RFU 47 V SS 167 CB6 76 S14 196 A13 107 DQ50 227 DQ55

18 RESET 138 RFU 48 CB2 168 CB7 77 ODT1 197 V DD 1 0 8D Q 5 12 2 8 V SS

19 NC 139 V SS 49 CB3 169 V SS 78 V DDQ 198 V SS 109 V SS 229 DQ60

20 V SS 140 DQ14 50 V SS 170 V DDQ 79 V SS 199 DQ36 110 DQ56 230 DQ61

21 DQ10 141 DQ15 51 V DDQ 171 CKE14 80 DQ32 200 DQ37 111 DQ57 231 V SS

22 DQ11 142 V SS 52 CKE0 172 V DD 81 DQ33 201 V SS 112 V SS 232 DM7/DQS16

23 V SS 143 DQ20 53 V DD 173 NC 82 V SS 202 DM4/DQS13 113 DQS 7 233 NC/DQS 16

24 DQ16 144 DQ21 54 BA2 174 NC 83 DQS 4 203 NC/DQS 13 114 DQS7 234 V SS

25 DQ17 145 V SS 55 NC/Err_Out 175 V DDQ 84 DQS4 204 V SS 115 V SS 235 DQ62

26 V SS 146 DM2/DQS11 56 V DDQ 176 A12 85 V SS 205 DQ38 116 DQ58 236 DQ63

27 DQS 2 147 NC/DQS 11 57 A11 177 A9 86 DQ34 206 DQ39 117 DQ59 237 V SS

28 DQS2 148 V SS 58 A7 178 V DD 87 DQ35 207 V SS 118 V SS 238 VDDSPD

29 V SS 149 DQ22 59 V DD 179 A8 88 V SS 208 DQ44 119 SDA 239 SA0

30 DQ18 150 DQ23 60 A5 180 A6 89 DQ40 209 DQ45 120 SCL 240 SA1

90 DQ41 210 V SS

Pin Configurations (Front side/Back side) * The VDD and VDDQ pins are tied to the single power-plane on PCB. Pin Name Description Pin Name Description CK0 Clock Inputs, positive line ODT0~ODT1 On die termination CK

0 Clock inputs, negative line DQ0~DQ63 Data Input/Output

CKE0, CKE1 Clock Enables CB0~CB7 Data check bits Input/Output RAS Row Address Strobe DQS0~DQS8 Data strobes CAS Column Address Strobe DQS 0~DQS8 Data strobes, negative line WE Write Enable DM(0~8), DQS(9~17) Data Masks / Data strobes (Read) S0, S1C h i p S e l e c t s D Q S 9~DQS17 Data strobes (Read), negative line A0~A9, A11~A13 Address Inputs RFU Reserved for Future Use A10/AP Address Input/Autoprecharge NC No Connect BA0~BA2 DDR2 SDRAM Bank Address TEST Memory bus test tool (Not Connect and Not Useable on DIMMs) SCL Serial Presence Detect (SPD) Clock Input VDD Core Power SDA SPD Data Input/Output VDDQ I/O Power SA0~SA2 SPD address VSS Ground Par_In Parity bit for the Address and Control bus VREF Input/Output Reference Err_Out Parity error found in the Address and Control bus VDDSPD SPD Power RESET Register and PLL control pin Pin Description

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Symbol Type Description CK0 Input Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL. CK0 Input Negative line of the differential pair of system clock inputs that drives the input to the on-DIMM PLL. CKE0~CKE1 Input Activates the SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks, CKE low initiates the Power Down mode, or the Self Refresh mode. S0~S1 Input Enables the associated SDRAM command decoder when low and disables decoder when high. When decoder is dis- abled, new commands are ignored but previous operations continue. These input signals also disable all outputs (except CKE and ODT) of the register(s) on the DIMM when both inputs are high. ODT0~ODT1 Input I/O bus impedance control signals. R AS, CAS, WE Input When sampled at the positive rising edge of the clock, CAS , RAS, and WE define the operation to be executed by the SDRAM. VREF Supply Reference voltage for SSTL_18 inputs VDDQ Supply Isolated power supply for the DDR SDRAM output buffers to provide improved noise immunity BA0~BA2 Input Selects which SDRAM bank of eight is activated. A0~A9,A10/AP A11~A13 Input During a Bank Activate command cycle, Address defines the row address. During a Read or Write command cycle, Address defines the column address. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0, BA1, BA2 defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge com- mand cycle, AP is used in conjunction with BA0, BA1, BA2 to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0 or BA1 or BA2. If AP is low, BA0 and BA1 and BA2 are used to define which bank to precharge. DQ0~63, CB0~CB7 In/Out Data and Check Bit Input/Output pins DM0~DM8 Input Masks write data when high, issued concurrently with input data. Both DM and DQ have a write latency of one clock once the write command is registered into the SDRAM. V DD, VSS Supply Power and ground for the DDR SDRAM input buffers and core logic DQS0~DQS17 In/Out Positive line of the differential data strobe for input and output data. DQS0~DQS17 In/Out Negative line of the differential data strobe for input and output data. SA0~SA2 Input These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD EEPROM address range. SDA In/Out This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be connected from the SDA bus line to VDDSPD to act as a pullup. SCL Input This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time to VDDSPD to act as a pullup. VDDSPD Supply Serial EEPROM positive power supply (wired to a separate power pin at the connector which supports from 1.7 Volt to 3.6 Volt operation). RESET Input The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will be set to low level (The PLL will remain synchro- nized with the input clock ) Par_In Input Parity bit for the Address and Control bus. ( “1 “ : Odd, “0 “ : Even) Err_Out Input Parity error found in the Address and Control bus TEST In/Out Used by memory bus analysis tools (unused on memory DIMMs) Input/Output Function Description

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (populated as 1 rank of x8 DDR2 SDRAMs) 1GB, 128Mx72 Module (M393T2863AZ3/M393T2863AZA) RS0 DQS0 DQS0 DM0/DQS9 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS1 DQS1 DM1/DQS10 NC/DQS10 DM/ RDQS NU/ RDQS CS DQS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS2 DQS2 DM2/DQS11 NC/DQS11 DM/ RDQS NU/ RDQS CS DQS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS3 DQS3 DM3/DQS12 NC/DQS12 DM/ RDQS NU/ RDQS CS DQS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS8 DQS8 DM8/DQS17 NC/DQS17 DM/ RDQS NU/ RDQS CS DQS DQS CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS4 DQS4 DM4/DQS13 NC/DQS13 DM/ RDQS NU/ RDQS CS DQS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS5 DQS5 DM5/DQS14 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS6 DQS6 DM6/DQS15 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS7 DQS7 DM7/DQS16 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 Serial PD A1 A2 SA0 SA1 SA2 SCL SDA VSS D0 - D8 VDD/VDDQ D0 - D8 D0 - D8VREF VDDSPD Serial PD WP Notes : 1. DQ-to-I/O wiring may be changed within a byte. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. 3. Unless otherwise noted, resister values are 22 Ohms 1:1 R E G I S T E R RST S0* BA0-BA2 A0-A13 RAS CAS WE CKE0 ODT0 RESET PCK7 PCK7 RSO-> CS : DDR2 SDRAMs D0-D8 RBA0-RBA2 -> BA0-BA2 : DDR2 SDRAMs D0-D8 RA0-RA13 -> A0-A13 : DDR2 SDRAMs D0-D8 RRAS -> RAS : DDR2 SDRAMs D0-D8 RCAS -> CAS : DDR2 SDRAMs D0-D8 RWE -> WE : DDR2 SDRAMs D0-D8 RCKE0 -> CKE : DDR2 SDRAMs D0-D8 RODT0 -> ODT0 : DDR2 SDRAMs D0-D8 P L L OE CK0 CK0 RESET PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK7 -> CK : Register PCK7 -> CK : Register * S0 connects to DCS and VDD connects to CSR on the register. Functional Block Diagram Signals for Address and Command Parity Function (M393T2863AZA) VSS VSS PAR_IN PPO QERR Err_Out Register PAR_IN 100K ohms The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: "Register Options for Unused Address inputs"

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM RS0 DQS0 DQS0 DM0/DQS9 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS1 DQS1 DM1/DQS10 NC/DQS10 DM/ RDQS NU/ RDQS CS DQS DQS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS2 DQS2 DM2/DQS11 NC/DQS11 DM/ RDQS NU/ RDQS CS DQS DQS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS3 DQS3 DM3/DQS12 NC/DQS12 DM/ RDQS NU/ RDQS CS DQS DQS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS8 DQS8 DM8/DQS17 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS4 DQS4 DM4/DQS13 NC/DQS13 DM/ RDQS NU/ RDQS CS DQS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS5 DQS5 DM5/DQS14 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS6 DQS6 DM6/DQS15 NC/DQS DM/ RDQS NU/ RDQS CS DQS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS7 DQS7 DM7/DQS16 NC/DQS16 DM/ RDQS NU/ RDQS CS DQS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D10 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D11 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D12 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D17 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D13 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D14 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D15 DM/ RDQS NU/ RDQS CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D16 RS1 Serial PD A1 A2 SA0 SA1 SA2 SCL SDA VSS D0 - D17 VDD/VDDQ D0 - D17 D0 - D17VREF VDDSPD Serial PD WP Notes : 1. DQ-to-I/O wiring may be changed per nibble. 2. Unless otherwise noted, resister values are 22 Ohms 3. RS0 and RS1 alternate between the back and front sides of the DIMM 1:2 R E G I S T E R RST S1* BA0-BA2 A0-A13 RAS CAS WE CKE0 CKE1 RESET PCK7 PCK7** RS1-> CS : DDR2 SDRAMs D9-D17 RBA0-RBA2 -> BA0-BA2: DDR2 SDRAMs D0-D17 RA0-RA13 -> A0-A13 : DDR2 SDRAMs D0-D17 RRAS -> RAS : DDR2 SDRAMs D0-D17 RCAS -> CAS : DDR2 SDRAMs D0-D17 RWE -> WE : DDR2 SDRAMs D0-D17 RCKE0 -> CKE : DDR2 SDRAMs D0-D8 RCKE1 -> CKE : DDR2 SDRAMs D9-D17 P L L OE CK0 CK0 RESET PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D17 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D17 PCK7 -> CK : Register PCK7 -> CK : Register ODT0 ODT1 RODT0 -> ODT0 : DDR2 SDRAMs D0-D8 RODT1 -> ODT1 : DDR2 SDRAMs D9-D17 S0* RSO-> CS : DDR2 SDRAMs D0-D8 (populated as 2 rank of x8 DDR2 SDRAMs) 2GB, 256Mx72 Module (M393T5663AZ3/M393T5663AZA) * S0 connects to DCS and S0 connects to CSR on a Register, S1 connects to DCS and S0 connects to CSR on another Register. ** RESET, PCK7 and PCK7 connects to both Registers. Other signals connect to one of two Registers. Signals for Address and Command Parity Function (M393T5663AZA) VSS VDD PAR_IN PPO QERR Register A PAR_IN 100K ohms The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: "Register Options for Unused Address inputs" VDD VDD PPO QERR Err_Out Register B PAR_IN

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM VSS RS0 DQS0 DQS0 DM CS DQS DQS DQ0 DQ1 DQ2 DQ3 I/O 0 I/O 1 I/O 2 I/O 3 DM0/DQS9 NC/DQS9 DM CS DQS DQS DQ4 DQ5 DQ6 DQ7 I/O 0 I/O 1 I/O 2 I/O 3 DQS1 DQS1 DM CS DQS DQS DQ8 DQ9 DQ10 DQ11 I/O 0 I/O 1 I/O 2 I/O 3 DM1/DQS10 NC/DQS10 DM CS DQS DQS DQ12 DQ13 DQ14 DQ15 I/O 0 I/O 1 I/O 2 I/O 3 D10 DQS2 DQS2 DM CS DQS DQS DQ16 DQ17 DQ18 DQ19 I/O 0 I/O 1 I/O 2 I/O 3 DM2/DQS11 NC/DQS11 DM CS DQS DQS DQ20 DQ21 DQ22 DQ23 I/O 0 I/O 1 I/O 2 I/O 3 D11 DQS3 DQS3 DM CS DQS DQS DQ24 DQ25 DQ26 DQ27 I/O 0 I/O 1 I/O 2 I/O 3 DM3/DQS12 NC/DQS12 DM CS DQS DQS DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 D12 DQS5 DQS5 DM CS DQS DQS DQ40 DQ41 DQ42 DQ43 I/O 0 I/O 1 I/O 2 I/O 3 DM5/DQS14 NC/DQS14 DM CS DQS DQS DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 D14 DQS4 DQS4 DM CS DQS DQS DQ32 DQ33 DQ34 DQ35 I/O 0 I/O 1 I/O 2 I/O 3 DM4/DQS13 NC/DQS13 DM CS DQS DQS DQ36 DQ37 DQ38 DQ39 I/O 0 I/O 1 I/O 2 I/O 3 D13 DQS6 DQS6 DM CS DQS DQS DQ48 DQ49 DQ50 DQ51 I/O 0 I/O 1 I/O 2 I/O 3 DM6/DQS15 NC/DQS15 DM CS DQS DQS DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 D15 DQS8 DQS8 DM CS DQS DQS CB0 CB1 CB2 CB3 I/O 0 I/O 1 I/O 2 I/O 3 DM8/DQS17 NC/DQS17 DM CS DQS DQS CB4 CB5 CB6 CB7 I/O 0 I/O 1 I/O 2 I/O 3 D17 DQS7 DQS7 DM CS DQS DQS DQ56 DQ57 DQ58 DQ59 I/O 0 I/O 1 I/O 2 I/O 3 DM7DQS16 NC/DQS16 DM CS DQS DQS DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 D16 Serial PD A1 A2 SA0 SA1 SA2 SCL SDA VSS D0 - D17 VDD/VDDQ D0 - D17 D0 - D17VREF VDDSPD Serial PD WP Notes : 1. DQ-to-I/O wiring may be changed per nibble. 2. Unless otherwise noted, resister values are 22 Ohms 1:2 R E G I S T E R RST S0* BA0-BA2 A0-A13 RAS CAS WE CKE0 ODT0 RESET PCK7 PCK7 RSO-> CS : DDR2 SDRAMs D0-D17 RBA0-RBA2 -> BA0-BA2 : DDR2 SDRAMs D0-D17 RA0-RA13 -> A0-A13 : DDR2 SDRAMs D0-D17 RRAS -> RAS : DDR2 SDRAMs D0-D17 RCAS -> CAS : DDR2 SDRAMs D0-D17 RWE -> WE : DDR2 SDRAMs D0-D17 RCKE0 -> CKE : DDR2 SDRAMs D0-D17 RODT0 -> ODT0 : DDR2 SDRAMs D0-D17 P L L OE CK0 CK0 RESET PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK7 -> CK : Register PCK7 -> CK : Register (populated as 1 rank of x4 DDR2 SDRAMs) 2GB, 256Mx72 Module (M393T5660AZ3/M393T5660AZA) * S0 connects to DCS of Register1, CSR of Register2. CSR of reg- ister 1 and DCS of register 2 connects to VDD. ** RESET, PCK7 and PCK 7 connects to both Registers. Other sig- nals connect to one of two Registers. Signals for Address and Command Parity Function (M393T5660AZA) VSS VDD PAR_IN PPO QERR Register A PAR_IN 100K ohms The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: "Register Options for Unused Address inputs" VDD VDD PPO QERR Err_Out Register B PAR_IN

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (populated as 2 rank of x4 DDR2 SDRAMs) Serial PD A1 A2 SA0 SA1 SA2 SCL SDA VSS D0 - D35 VDD/VDDQ D0 - D35 D0 - D35VREF VDDSPD Serial PD WP P L L OE CK0 CK0 RESET PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D35 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D35 PCK7 -> CK : Register PCK7 -> CK : Register 1:2 R E G I S T E R RST S1* BA0-BA2 A0-A13 RAS CAS WE CKE0 CKE1 RESET PCK7 PCK7** RS1-> CS : DDR2 SDRAMs D18-D35 RBA0-RBA2 -> BA0-BA2 : DDR2 SDRAMs D0-D35 RA0-RA13 -> A0-A13 : DDR2 SDRAMs D0-D35 RRAS -> RAS : DDR2 SDRAMs D0-D35 RCAS -> CAS : DDR2 SDRAMs D0-D35 RWE -> WE : DDR2 SDRAMs D0-D35 RCKE0 -> CKE : DDR2 SDRAMs D0-D17 RCKE1 -> CKE : DDR2 SDRAMs D18-D35 ODT0 ODT1 RODT0 -> ODT0 : DDR2 SDRAMs D0-D17 RODT1 -> ODT1 : DDR2 SDRAMs D18-D35 S0* RSO-> CS : DDR2 SDRAMs D0-D17 4GB, 512Mx72 Module (M393T5168AZ0/M393T5166AZA) * S0 connects to DCS and S0 connects to CSR on a Register, S1 connects to DCS and S0 connects to CSR on another Register. ** RESET, PCK7 and PCK7 connects to both Registers. Other signals connect to one of two Registers. VSS RS0 DQS0 DQS0 DM CS DQS DQS DQ0 DQ1 DQ2 DQ3 I/O 0 I/O 1 I/O 2 I/O 3 DM0/DQS9 NC/DQS9 DM CS DQS DQS DQ4 DQ5 DQ6 DQ7 I/O 0 I/O 1 I/O 2 I/O 3 DQS1 DQS1 DM CS DQS DQS DQ8 DQ9 DQ10 DQ11 I/O 0 I/O 1 I/O 2 I/O 3 DM1/DQS10 NC/DQS10 DM CS DQS DQS DQ12 DQ13 DQ14 DQ15 I/O 0 I/O 1 I/O 2 I/O 3 D10 DQS2 DQS2 DM CS DQS DQS DQ16 DQ17 DQ18 DQ19 I/O 0 I/O 1 I/O 2 I/O 3 DM2/DQS11 NC/DQS11 DM CS DQS DQS DQ20 DQ21 DQ22 DQ23 I/O 0 I/O 1 I/O 2 I/O 3 D11 DQS3 DQS3 DM CS DQS DQS DQ24 DQ25 DQ26 DQ27 I/O 0 I/O 1 I/O 2 I/O 3 DM3/DQS12 NC/DQS12 DM CS DQS DQS DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 D12 DQS5 DQS5 DM CS DQS DQS DQ40 DQ41 DQ42 DQ43 I/O 0 I/O 1 I/O 2 I/O 3 DM5/DQS14 NC/DQS14 DM CS DQS DQS DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 D14 DQS4 DQS4 DM CS DQS DQS DQ32 DQ33 DQ34 DQ35 I/O 0 I/O 1 I/O 2 I/O 3 DM4/DQS13 NC/DQS13 DM CS DQS DQS DQ36 DQ37 DQ38 DQ39 I/O 0 I/O 1 I/O 2 I/O 3 D13 DQS6 DQS6 DM CS DQS DQS DQ48 DQ49 DQ50 DQ51 I/O 0 I/O 1 I/O 2 I/O 3 DM6/DQS15 NC/DQS15 DM CS DQS DQS DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 D15 DQS8 DQS8 DM CS DQS DQS CB0 CB1 CB2 CB3 I/O 0 I/O 1 I/O 2 I/O 3 DM8/DQS17 NC/DQS17 DM CS DQS DQS CB4 CB5 CB6 CB7 I/O 0 I/O 1 I/O 2 I/O 3 D17 DQS7 DQS7 DM CS DQS DQS DQ56 DQ57 DQ58 DQ59 I/O 0 I/O 1 I/O 2 I/O 3 DM7DQS16 NC/DQS16 DM CS DQS DQS DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 D16 DM/ CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D18 DM/ CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D19 DM/ CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D20 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D21 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D23 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D22 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D24 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D26 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D25 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D27 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D28 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D29 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D30 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D32 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D31 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D33 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D35 DM CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 D34 RS1 Signals for Address and Command The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the sec- tion: "Register Options for Unused Address inputs" PAR_IN Err_Out 100K ohms VSS VDD PPO QERR Register A1 PAR_IN VDD VDD PPO QERR Register B1 PAR_IN VSS VDD PPO QERR Register A2 PAR_IN VDD VDD PPO QERR Register B2 PAR_IN Parity Function (M393T5166AZA) Register A1 and A2 share the a part of Add/ Cmd input signal set. Register B1 and B2 share the rest part of Add/ Cmd input signal set.

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Recommended DC Operating Conditions (SSTL - 1.8) Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VDD, VDDQ and VDDL tied together. Symbol Parameter Rating Units Notes Min. Typ. Max. VDD Supply Voltage 1.7 1.8 1.9 V VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 4 VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 4 VREF Input Reference Voltage 0.49*V DDQ 0.50*VDDQ 0.51*VDDQ mV 1,2 VTT Termination Voltage V REF-0.04 V REF VREF+0.04 V 3 Note : 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this s pecification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, plea se refer to JESD51-2 standard. Symbol Parameter Rating Units Notes VDD Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1 VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1 VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1 VIN, VOUT Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1 TSTG Storage Temperature -55 to +100 °C 1, 2 AC & DC Operating Conditions Absolute Maximum DC Ratings

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Notes: 1. Input waveform timing is referenced to the input signal crossing through the V IH/IL(AC) level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from V REF to VIH(AC) min for rising edges and the range from V REF to VIL(AC) max for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from V IL(AC) to VIH(AC) on the positive transitions and V IH(AC) to VIL(AC) on the negative transitions. Symbol Condition Value Units Notes VREF Input reference voltage 0.5 * V DDQ V1 VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1 SLEW Input signal minimum slew rate 1.0 V/ns 2, 3 VDDQ VIH(AC) min VIH(DC) min VREF VIL(DC) max VIL(AC) max VSS < AC Input Test Signal Waveform > VSWING(MAX) delta TRdelta TF VREF - VIL(AC) max delta TF Falling Slew = Rising Slew = VIH(AC) min - VREF delta TR Note : 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, pl ease refer to JESD51.2 standard. 2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate. Symbol Parameter Rating Units Notes TOPER Operating Temperature 0 to 95 °C 1, 2, 3 Input DC Logic Level Symbol Parameter Min. Max. Units Notes VIH(DC) DC input logic high V REF + 0.125 V DDQ + 0.3 V VIL(DC) DC input logic low - 0.3 V REF - 0.125 V Input AC Logic Level Symbol Parameter DDR2-400, DDR2-533 DDR2-667 Units Min. Max. Min. Max. VIH (AC) AC input logic high V REF + 0.250 - V REF + 0.200 - V VIL (AC) AC input logic low - V REF - 0.250 - V REF - 0.200 V AC Input Test Conditions Operating Temperature Condition

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions Units Note IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\\ is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0mA mA Slow PDN Exit MRS(12) = 1mA mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRAS- max(IDD), tRP = tRP(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Address bus inputs are SWITCH- ING; Data pattern is same as IDD4W mA IDD5B Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD6 Self refresh current; CK and CK\\ at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Normal mA Low Power mA IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the follow- ing page for detailed timing conditions mA IDD Specification Parameters Definition

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (TA=0oC, VDD= 1.9V) * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit Notes IDD0 TBD 1,790 1,665 mA IDD1 TBD 1,920 1,815 mA IDD2P TBD 910 850 mA IDD2Q TBD 1,470 1,310 mA IDD2N TBD 1,360 1,240 mA IDD3P-F TBD 1,280 1,220 mA IDD3P-S TBD 654 624 mA IDD3N TBD 1,525 1,415 mA IDD4W TBD 2,245 1,955 mA IDD4R TBD 2,105 1,875 mA IDD5B TBD 2,980 2,800 mA IDD6* Normal TBD 270 270 mA IDD7 TBD 3,965 3,500 mA (TA=0oC, VDD= 1.9V) * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit Notes IDD0 TBD 1,285 1,175 mA IDD1 TBD 1,405 1,285 mA IDD2P TBD 625 585 mA IDD2Q TBD 895 800 mA IDD2N TBD 865 760 mA IDD3P-F TBD 795 765 mA IDD3P-S TBD 402 392 mA IDD3N TBD 1,090 975 mA IDD4W TBD 1,710 1,455 mA IDD4R TBD 1,570 1,385 mA IDD5B TBD 2,455 2,350 mA IDD6* Normal TBD 135 135 mA IDD7 TBD 3,200 2,930 mA M393T2863AZ3/M393T2863AZA : 1GB(128Mx8 *9) Module M393T5663AZ3/M393T5663AZA : 2GB(128Mx8 *18) Module Operating Current Table(1-1)

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (TA=0oC, VDD= 1.9V) * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit Notes IDD0 TBD 2,150 2,070 mA IDD1 TBD 2,370 2,310 mA IDD2P TBD 910 850 mA IDD2Q TBD 1,470 1,310 mA IDD2N TBD 1,360 1,240 mA IDD3P-F TBD 1,280 1,220 mA IDD3P-S TBD 654 624 mA IDD3N TBD 1,660 1,550 mA IDD4W TBD 2,830 2,360 mA IDD4R TBD 2,690 2,280 mA IDD5B TBD 4,510 4,330 mA IDD6* Normal TBD 270 270 mA IDD7 TBD 6,080 5,480 mA (TA=0oC, VDD= 1.9V) * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit Notes IDD0 TBD 3,170 3,040 mA IDD1 TBD 3,420 3,370 mA IDD2P TBD 1,480 1,380 mA IDD2Q TBD 2,600 2,320 mA IDD2N TBD 2,360 2,210 mA IDD3P-F TBD 2,240 2,140 mA IDD3P-S TBD 1,138 1,088 mA IDD3N TBD 2,590 2,330 mA IDD4W TBD 3,920 3,360 mA IDD4R TBD 3,770 3,260 mA IDD5B TBD 5,550 5,230 mA IDD6* Normal TBD 540 540 mA IDD7 TBD 7,610 6,630 mA M393T5168AZ0/M393T5166AZA : 4GB(st.512Mx4 *18) Module M393T5660AZ3/M393T5660AZA : 2GB(256Mx4 *18) Module

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (VDD=1.8V, VDDQ=1.8V, TA=25oC) * DM is internally loaded to match DQ and DQS identically. Parameter Symbol Min Max Min Max Min Max Min Max Units Part-Number M393T2863AZ3 M393T2863AZA M393T5663AZ3 M393T5663AZA M393T5660AZ3 M393T5660AZA M393T5168AZ0 M393T5166AZA Input capacitance, CK and CK CCK - 11 - 11 - 11 - 11 pF Input capacitance, CKE and CS CI1 - 12 - 12 - 12 - 12 Input capacitance, Addr,RAS,CAS,WE CI2 - 12 - 12 - 12 - 12 Input/output capacitance, DQ, DM, DQS, DQS CIO - 10 - 10 - 10 - 10 Input/Output Capacitance

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM (Refer to notes for informations related to this table at the bottom) Parameter Symbol DDR2-667 DDR2-533 DDR2-400 Units Notes min max min max min max DQ output access time from CK/CK tAC -450 +450 -500 +500 -600 +600 ps DQS output access time from CK/CK tDQSCK -400 +400 -450 +450 -500 +500 ps CK half period tHP min(tCL, tCH) x min(tCL, tCH) x min(tCL, tCH) x ps Clock cycle time, CL=x tCK 3000 8000 3750 8000 5000 8000 ps DQ and DM input hold time tDH 175 x 225 x2 7 5 x ps DQ and DM input setup time tDS 100 x 100 x1 5 0 x ps Control & Address input pulse width for each input tIPW 0.6 x 0.6 x0 . 6 x tCK DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x0 . 3 5 x tCK Data-out high-impedance time from CK/CK tHZ x tAC max x tAC max x tAC max ps DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max tAC min tAC max ps DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2* tACmin tAC max 2* tACmin tAC max ps DQS-DQ skew for DQS and associated DQ signals tDQSQ x 240 x 300 x 350 ps DQ hold skew factor tQHS x 340 x 400 x 450 ps DQ/DQS output hold time from DQS tQH tHP - tQHS x tHP - tQHS x tHP - tQHS x ps Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units Refresh to active/Refresh command time tRFC 75 105 127.5 195 327.5 ns Average periodic refresh interval tREFI (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) Refresh Parameters by Device Density Speed DDR2-667(E6) DDR2-533(D5) DDR2-400(CC) UnitsBin(CL - tRCD - tRP) 5 - 5 - 5 4 - 4 - 4 3 - 3 - 3 Parameter min max min max min max tCK, CL=3 5 8 5 8 5 8 ns tCK, CL=4 3.75 8 3.75 8 5 8 ns tCK, CL=5 3 8 - - - - ns tRCD 15 - 15 - 15 - ns tRP 15 - 15 - 15 - ns tRC 54 - 55 - 55 - ns tRAS 39 70000 40 70000 40 70000 ns Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Timing Parameters by Speed Grade

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Parameter Symbol DDR2-667 DDR2-533 DDR2-400 Units Notes min max min max min max DQS input high pulse width tDQSH 0.35 x 0.35 x 0.35 x tCK DQS input low pulse width tDQSL 0.35 x 0.35 x 0.35 x tCK DQS falling edge to CK setup time tDSS 0.2 x 0.2 x 0.2 x tCK DQS falling edge hold time from CK tDSH 0.2 x 0.2 x 0.2 x tCK Mode register set command cycle time tMRD 2 x 2 x 2 x tCK Write preamble tWPRE 0.35 x 0.35 x 0.35 x tCK Address and control input hold time tIH 275 x3 7 5 x 475 x ps Address and control input setup time tIS 200 x2 5 0 x 350 x ps Active to active command period for 1KB page size products tRRD 7.5 x7 . 5 x 7.5 x ns Active to active command period for 2KB page size products tRRD 10 x1 0 x 10 x ns Four Activate Window for 1KB page size products tFAW 37.5 37.5 37.5 ns Four Activate Window for 2KB page size products tFAW 50 50 50 ns CAS to CAS command delay tCCD 2 2 2 tCK Write recovery time tWR 15 x1 5 x 15 x ns Auto precharge write recovery + precharge time tDAL WR+tRP x tWR+tRP x tWR+tRP x tCK Internal write to read command delay tWTR 7.5 x7 . 5 x1 0 x ns Internal read to precharge command delay tRTP 7.5 7.5 7.5 ns Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 200 200 tCK Exit precharge power down to any non-read com- mand tXP 2 x 2 x 2 x tCK Exit active power down to read command tXARD 2 x 2 x 2 x tCK Exit active power down to read command (Slow exit, Lower power) tXARDS 7 - AL 6 - AL 6 - AL tCK CKE minimum pulse width(high and low pulse width) tCKE 3 33 t C K O D T t u r n - o n d e l a y t A O N D 22222 2 t C K ODT turn-on tAON tAC(min) tAC(max) +0.7 tAC(min) tAC(max) +1 tAC(min) tAC(max)+ 1 ns ODT turn-on(Power-Down mode) tAONPD tAC(min)+ 2tCK+tAC (max)+1 tAC(min)+ 2tCK+tAC (max)+1 tAC(min)+ 2tCK+tAC (max)+1 ns ODT turn-off tAOF tAC(min) tAC(max) + 0.6 tAC(min) tAC(max) + 0.6 tAC(min) tAC(max)+ 0.6 ns ODT turn-off (Power-Down mode) tAOFPD tAC(min)+ 2.5tCK+tA C(max)+1 tAC(min)+ 2.5tCK+ tAC(max) tAC(min)+ 2.5tCK+ tAC(max)+ ns ODT to power down entry latency tANPD 3 3 3 tCK ODT power down exit latency tAXPD 8 8 8 tCK OCD drive mode output delay tOIT 0 12 0 12 0 12 ns Minimum time clocks remains ON after CKE asyn- chronously drops LOW tDelay tIS+tCK +tIH tIS+tCK +tIH tIS+tCK +tIH ns

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM The used device is 128M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G084QA Units : Millimeters 128Mbx8 based 128Mx72 Module(1 Rank) (M393T2863AZ3/M393T2863AZA) Physical Dimensions 131.35 133.35 10.00 N/A (for x72) 128.95 (2) 2.50 (2X)4.00 30.00 2.30 17.80 (for x64) ECC A B 63.00 55.00 2.50 1.00 0.20 2.50±0.20 Detail B 5.00 Detail A 4.00 1.50±0.10 0.80±0.054.00 3.80 3.00 4.00 Register PLL 1.27 ± 0.10 2.7 mm 1.0 max

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM Units : Millimeters 128Mbx8/256Mbx4 based 256Mx72 Module(2/1 Ranks) The used device is 128M x8 / 256M x4 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G084QA / K4T1G044QA 131.35 133.35 10.00 N/A (for x72) 128.95 (2) 2.50 (2X)4.00 30.00 2.30 17.80 (for x64) ECC A B 63.00 55.00 2.50 1.00 0.20 2.50±0.20 Detail B 5.00 Detail A 4.00 1.50±0.10 0.80±0.054.00 3.80 3.00 4.00 Register PLL Register 1.27 ± 0.10 4.0 mm 1.0 max (M393T5663AZ3 / M393T5663AZA / M393T5660AZ3 / M393T5660AZA)

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM The used device is st.512M x4 DDR2 SDRAM. DDR2 SDRAM Part NO : K4T2G064QA / K4T2G264QA st.512Mbx4 based 512Mx72 Module(2 Ranks) (M393T5168AZ0/M393T5166AZA) Units : Millimeters 131.35 133.35 10.00 128.95 (2) 2.50 (2X)4.00 30.00 2.30 17.80 A B 63.00 55.00 2.50 1.00 0.20 2.50±0.20 Detail B 5.00 Detail A 4.00 1.50±0.10 0.80±0.054.00 3.80 3.00 4.00 Register PLL Register 1.27 ± 0.10 6.75 mm 4.05 max

Rev. 1.2 Sep. 2005 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM CK0 CK0 PLL OUT1 OUTN Reg.A Reg.B Feedback In Feedback Out IN 0ns (nominal) C 120 ohms 120 ohms 120 ohms 120 ohmsC Note : 1. The clock delay from the input of the PLL clock to the input of any DDR2 SDRAM or register will be set to 0ns (nominal). 2. Input, output, and feedback clock lines are terminated from line to line as shown, and not from line to ground. 3. Only one PLL output is shown per output type. Any additional PLL outputs will be wired in a similar manner. 4. Termination resistors for the PLL feedback path clocks are located as close to the input pin of the PLL as possible. DDR2 SDRAM DDR2 SDRAM

240 Pin DDR2 Registered DIMM Clock Topology