QM3054M6 UPI | Alldatasheet
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High Frequency Point- of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch PRPAK5X6 Pin Configuration Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Rev A.01 D101612 G S S S
N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.011 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 3.8 4.8 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 47 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.9 5.2 Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 11.5 16 nC Qgs Gate-Source Charge --- 4.1 5.7 Qgd Gate-Drain Charge --- 3.5 5 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=15A --- 7.0 14 ns Tr Rise Time --- 22 40 Td(off) Turn-Off Delay Time --- 35 70 Tf Fall Time --- 20 40 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1185 1660 pF Coss Output Capacitance --- 330 462 Crss Reverse Transfer Capacitance --- 148 207 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy5 VDD=25V , L=0.1mH , IAS=30A 45 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 97 A ISM Pulsed Source Current2,6 --- --- 180 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=52A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 7.Package limitation current is 85A. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics
N-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 30V Fast Switching MOSFETs 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform
N-Ch 30V Fast Switching MOSFETs Fig.12 Unclamped Inductive Switching Test Circuit & Waveforms