M3006D

QM3006D UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary G D Rev A.04 D121216 S

N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.028 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=30A --- 4.7 5.5 mΩ VGS=4.5V , ID=15A --- 7.5 9 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -6.16 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 43 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.7 3.1 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 20 28 nC Qgs Gate-Source Charge --- 7.6 10.6 Qgd Gate-Drain Charge --- 7.2 10.1 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 7.8 15.6 ns Tr Rise Time --- 15 27 Td(off) Turn-Off Delay Time --- 37.3 74.6 Tf Fall Time --- 10.6 21.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2295 3213 pF Coss Output Capacitance --- 267 374 Crss Reverse Transfer Capacitance --- 210 294 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=24A 63 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 80 A ISM Pulsed Source Current 2,6 --- --- 160 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 14 --- nS Qrr Reverse Recovery Charge --- 5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

N-Ch 30V Fast Switching MOSFETs 120 150 180 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5VVGS=3V 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS(A) TJ=25℃TJ=150℃ 0 6 12 18 24 30 36 42 QG , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) ID=15A VDS=24V VDS=15V 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 -5 40 85 130 175 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

N-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.02 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.01 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform