QM3004D UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary G D Rev A.03 D121016 S
N-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃, ID=1mA --- 0.027 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=30A --- 7.5 8.5 VGS=4.5V , ID=15A --- 11 14 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 38 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2.2 3.5 Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 12.6 17.6 nC Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=15A --- 4.6 9.2 ns Tr Rise Time --- 12.2 22 Td(off) Turn-Off Delay Time --- 26.6 53 Tf Fall Time --- 8 16 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1317 1843 pF Coss Output Capacitance --- 163 228 Crss Reverse Transfer Capacitance --- 131 183 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=20A 45 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 55 A ISM Pulsed Source Current 2,6 --- --- 110 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 9.2 --- nS Qrr Reverse Recovery Charge --- 2 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics
N-Ch 30V Fast Switching MOSFETs 100 00 .511 .522 .53 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS(A) TJ=25℃TJ=150℃ 0 6 12 18 24 30 QG , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) ID=15A VDS=24V VDS=15V 0.2 0.6 1.4 1.8 -50 25 100 175 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 -5 40 85 130 175 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 30V Fast Switching MOSFETs 100 1000 10000 1 5 9 1 31 72 12 5 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.3 DUTY =0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform