M116 CALOGIC | Alldatasheet
Document overview
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Technical content
FEATURES
- • Low IGSS
- • Integrated Zener Clamp for Gate Protection ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range M116 Hermetic TO-72 -55 oC to +125oC XM116 Sorted Chips in Carriers -55 oC to +125oC CORPORATION PIN CONFIGURATION TO-72 G D C S 1003Z DEVICE SCHEMATIC ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS rDS(on) Drain Source ON Resistance 100 Ω VGS = 20V, ID = 100µA
200 V GS = 10V, ID = 100µA
VGS(th) Gate Threshold Voltage 1 5 V VGS = VDS , ID = 10µA BV DSS Drain-Source Breakdown Voltage 30 I D = 1µA, VGS = 0 BV SDS Source-Drain Breakdown Voltage 30 IS = 1µA, VGD = VBD = 0 BV GBS Gate-Body Breakdown Voltage 30 60 IG = 10µA, VSB = VDB = 0 ID(OFF) Drain Cuttoff Current 10 nA VDS = 20V, VGS = 0 IS(OFF) Source Cutoff Current 10 V SD = 20V, VGD = VBD = 0 IGSS Gate-Body Leakage 100 pA V GS = 20V, VDS = 0 C gs Gate-Source (Note 1) 2.5 pF VGB = VDB = VSB = 0, f = 1MHz Body GuardedC gd Gate-Drain Capacitance (Note 1) 2.5 C db Drain-Body Capacitance (Note 1) 7 VGB = 0, VDB = 10V, f = 1MHz C iss Input Capacitance (Note 1) 10 VGB = 0, VDB = 10V, VBS = 0, f = 1MHz NOTE 1: For design reference only, not 100% tested. 4 0330