LTV825 LITEON | Alldatasheet
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Technical content
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only
FEATURES
- High current transfer ratio ( CTR : MIN. 600% at IF = 1mA, VCE = 2V ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 60µs at VCE = 2V, IC = 10mA, RL = 100Ω ) * Dual-in-line package : LTV-815 : 1-channel type LTV-825 : 2-channel type LTV-845 : 4-channel type * Wide lead spacing package : LTV-815M : 1-channel type LTV-825M : 2-channel type LTV-845M : 4-channel type * Surface mounting package : LTV-815S : 1-channel type LTV-825S : 2-channel type LTV-845S : 4-channel type * Tape and reel packaging : LTV-815S-TA1, LTV-825S-TA1 * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 193422-01 ) * NEMKO approved ( No. P96103013 ) * DEMKO approved ( No. 303986 ) * SEMKO approved ( No. 9646047 / 01-30 ) * VDE approved ( No. 094722 ) Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 1 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-815 : LTV-825 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 2 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-845 : LTV-815M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 3 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-825M : LTV-845M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 4 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-815S : LTV-825S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 5 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-845S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 6 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-815S-TA1 : LTV-825S-TA1 : Description Symbol Dimensions in mm ( inches ) Tape wide W 16 ± 0.3 ( .63 ) Pitch of sprocket holes P 0 4 ± 0.1 ( .15 ) Distance of compartment F 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) Distance of compartment to compartment P 1 12 ± 0.1 ( .472 ) Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 7 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current I F 50 mA Reverse Voltage V R 6 V INPUT Power Dissipation P 70 mW Collector - Emitter Voltage V CEO 35 V Emitter - Collector Voltage V ECO 6 V Collector Current I C 80 mA OUTPUT Collector Power Dissipation P C 150 mW Total Power Dissipation P tot 200 mW *1 Isolation Voltage V iso 5,000 Vrms Operating Temperature T opr -30 ~ +100 °C Storage Temperature T stg -55 ~ +125 °C *2 Soldering Temperature T sol 260 °C *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 8 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage V F — 1.2 1.4 V I F=20mA Reverse Current I R — — 10 µA VR=4V INPUT Terminal Capacitance C t — 30 250 pF V=0, f=1KHz Collector Dark Current I CEO — — 1 µA VCE=10V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 35 — — V IC=0.1mA IF=0 OUTPUT Emitter-Collector Breakdown Voltage BVECO 6 — — V IE=10µA IF=0 Collector Current I C 6 — 75 mA * Current Transfer Ratio CTR 600 — 7,500 % IF=1mA VCE=2V Collector-Emitter Saturation Voltage VCE(sat) — 0.8 1 V IF=20mA IC=5mA Isolation Resistance R iso 5×1010 1×1011 — Ω DC500V 40 ~ 60% R.H. Floating Capacitance C f — 0.6 1 pF V=0, f=1MHz Cut-Off Frequency f c 1 6 — kHz VCE=5V, IC=2mA RL=100Ω, -3dB Response Time (Rise) t r — 60 300 µs TRANSFER CHARACTERISTICS Response Time (Fall) t f — 53 250 µs VCE=2V, IC=10mA RL=100Ω * CTR I I 100%C F Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 9 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Fig.2 Collector Power Dissipation vs. Ambient Temperature Fig.4 Forward Current vs. Forward Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage F F CE F F -30 Ta= 75 C
50 C 25 C
-25 C V = 2V Ta= 25 C CE Ta= 25 C I = 10mA Pc(MAX.) 5mA 2mA 1mA Fig.3 Collector-emitter Saturation Voltage vs. Forward Current F CE Ic= 0.5m A A A A A Ta= 25 C 30m A 50m A Temperature Forward current I (m Collector power dissipation Pc (m W Forward current I (m Collector-em itter saturation voltage V (sat) Collector current Ic (m Current transfer ratio CTR (% Ambient temperature Ta ( C) Ambient temperature Ta ( C) Forward voltage V (V)Forward current I (mA) Forward current I (mA) Collector-emitter voltage V (V) o o 0 25 50 75 100 125 -30 0 12525 50 75 100 100 150 200 o 100 200 500 o o o o o 0.1 0.2 0.5 1 2 5 10 400 800 1200 1600 2000 100 12345 O O Voltage F Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 10 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage Fig.9 Collector Dark Current vs. Ambient Temperature Fig.10 Response Time vs. Load Fig.11 Frequency Response -30 CE V = 10VCE Ta= 25 C tr tf td ts vs. Ambient Temperature Ambient temperature Ta ( C) Ambient temperature Ta ( C) Ambient temperature Ta ( C) Frequency f (kHz) Collector-em itter saturation voltage V (sat) (V) -10 o 100 o o o o 0 2 55 07 5 1 0 0 100 150 -20 0.2 0.4 0.6 0.8 1.0 0 2 04 06 08 0 1 0 0 -25 0.2 0.050 2 55 07 5 1 0 0 -11 0.1 0.2 0.5 1 2 5 10 0.5 100 200 500 0.02 -20 -10 0.1 10 100 1 Resistance Test Circuit for Response Time Test Circuit for Frequency Response Input Output Input Output Vcc td tr tf ts 90% 10% Collecotr dark current ICEO(A) Relative current transfer ratio (% Response tim e ( Voltage gain Av (dB) Load resistance RL(k ) RLRD RLRD Output Vc c IF=1 m A VCE=2 V IF=2 0 m A IC=5 m A VCE=2 V IC=1 0 m A VCE=2 V IC= 2mA Ta= 25 C Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 11 of 12 BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm
4 PIN 8 PIN
16 PIN
Part No. : LTV-815 / 825 / 845 ( M, S, S-TA1 ) Page : 12 of 12 BNS-OD-C131/A4