LTE-4206 LITEON | Alldatasheet
Document overview
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Technical content
Features
Selected to specific on-line intensity and radiant inten- sity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes.
Description
The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plas- tic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens. Parameter Symbol Min. Typ. Max. Unit Test Condition Electrical Optical Characteristics at Ta=25 Parameter Power Dissipation Peak forward Current (300pps, 10 s pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] 260 for 5 Seconds mW A mA V -40 to +85 -55 to +100 Maximum Rating Unit Absolute Maximum Ratings at Ta=25 Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and centered on the mechanical axis of the lens and 26.8mm from lens. *Aperture Radiant Incidence Radiant Intensity Peak Emission Wavelength Spectral Line Half-Width Forward Voltage Reverse Current View Angle (See Fig.6) Ee Ie Peak VF IR 0.3 2.25 0.7 5.26 940 1.2 1.6 100 mW/cm2 mW/sr nm nm V A deg IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V
Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted)