LST676 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • P-LCC-2 package
  • color of package: white
  • for use as optical indicator
  • for backlighting, optical coupling into light pipes and lenses
  • suitable for all SMT assembly and soldering methods
  • available taped on reel (8 mm tape) Hyper TOPLED ® Hyper-Bright LED LS T676, LA T676, LO T676 LY T676

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 2 Streuung der Lichtstärke in einer VerpackungseinheitIV max /IV min ≤ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min ≤ 2.0. Typ Type Emissions- farbe Color of Emission Farbe der Lichtaustritts- fläche Color of the Light Emitting Area Lichtstärke Luminous Intensity IF = 20 mA IV (mcd) Lichtstrom Luminous Flux IF = 20 mA Φ V (mlm) Bestellnummer Ordering Code LS T676-NR LS T676-P LS T676-Q LS T676-R LS T676-PS super-red colorless clear 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 180 (typ.) 300 (typ.) 450 (typ.) Q62703-Q3135 Q62703-Q3136 Q62703-Q3137 Q62703-Q3138 Q62703-Q3139 LA T676-PS LA T676-Q LA T676-R LA T676-S LA T676-QT amber colorless clear 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 300 (typ.) 450 (typ.) 700 (typ.) Q62703-Q3423 Q62703-Q3424 Q62703-Q3425 Q62703-Q3426 Q62703-Q3427 LO T676-PS LO T676-Q LO T676-R LO T676-S LO T676-QT orange colorless clear 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 300 (typ.) 450 (typ.) 600 (typ.) Q62703-Q3066 Q62703-Q3064 Q62703-Q3065 Q62703-Q3091 Q62703-Q3125 LY T676-PS LY T676-Q LY T676-R LY T676-S LY T676-QT yellow colorless clear 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 300 (typ.) 450 (typ.) 700 (typ.) Q62703-Q3855 Q62703-Q3159 Q62703-Q3160 Q62703-Q3404 Q62703-Q3161

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 3 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LA, LO LY Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t≤ 10 µs,D = 0.005 IFM 1 0.2 A Sperrspanung1) Reverse voltage1) VR 3V Verlustleistung Power dissipation TA ≤ 25 ˚C Ptot 80 55 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board* ) (Padgröße ≥16 mm 2) mounted on PC board*) (pad size ≥ 16 mm2) Rth JA 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. *) PC-board: FR4

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 4 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 20 mA λpeak 645 622 610 591 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 20 mA λdom 632 615 605 587 nm Spektrale Bandbreite bei 50%Irel max (typ.) Spectral bandwidth at 50%Irel max (typ.) IF = 20 mA Δλ 16 16 16 15 nm Abstrahlwinkel bei 50%Iv (Vollwinkel) Viewing angle at 50%Iv 2ϕ 120 120 120 120 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 20 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 3 V IR IR 0.01 0.01 0.01 0.01 µA µA Temperaturkoeffizient von λdom (IF = 20 mA) Temperature coefficient ofλdom (IF = 20 mA) TC λ 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient vonλpeak, IF = 20 mA (typ.) Temperature coefficient ofλpeak, IF = 20 mA (typ.) TC λ 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient vonVF, IF = 20 mA (typ.) Temperature coefficient ofVF, IF = 20 mA (typ.) TC V – 1.95 – 1.78 – 1.67 – 2.51 mV/K

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 5 Relative spektrale EmissionIrel =f (λ),TA = 25 ˚C,IF = 10 mA Relative spectral emission V(λ) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel =f (ϕ) Radiation characteristic

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 6 Durchlaßstrom IF =f (VF) Forward current TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV/IV(20 mA) =f (IF) Relative luminous intensity TA = 25 ˚C Relative LichtstärkeIV /IV(25 ˚C ) =f (TA) Relative luminous intensity IF = 10 mA

LS T676, LA T676, LO T676 LY T676 Semiconductor Group 7 Zulässige ImpulsbelastbarkeitIf =f(tp) Permissible pulse handling capability LO, LA, LS D = Parameter;TA = 25°C Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge GPL06724 Zulässige ImpulsbelastbarkeitIf =f(tp) Permissible pulse handling capability LY D = Parameter;TA = 25°C