LSR976-NO

LYR976 SIEMENS | Alldatasheet

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Features

l Industry standard footprint l low profile l suitable for IR reflow soldering process l for use as optical indicator and backlighting l available taped on reel (8 mm tape) CHIPLED LY R976, LO R976, LS R976

Semiconductor Group 2 1998-09-15 LY R976, LO R976 LS R976 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 95 ˚C Durchlaßstrom Forward current IF 25 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 0.1 A Sperrspanung Reverse voltage VR 3V Verlustleistung,TA = 25 ˚C Power dissipation,TA = 25 ˚C Ptot 70 mW Wärmewiderstand Sperrschicht / Umgebung Thermal resistance Junction / air Rth JA 700 K/W

Semiconductor Group 3 1998-09-15 LY R976, LO R976 LS R976 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LY LO LS Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 20 mA (typ.) lpeak 591 610 645 nm Dominantwellenlänge Dominant wavelength IF = 20 mA (typ.) ldom 587 605 632 nm Spektrale Bandbreite bei 50 %Irel max Spectral bandwidth at 50 %Irel max IF = 20 mA (typ.) Dl 15 16 16 nm Abstrahlwinkel bei 50 %Iv (Vollwinkel) Viewing angle at 50 %Iv 2j 160 160 160 Grad deg. Durchlaßspannung Forward voltage IF = 20 mA (typ.) IF = 20 mA (max.) VF VF 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom Reverse current (typ.) VR = 3 V (max.) IR IR 0.01 0.01 0.01 mA mA Temperaturkoeffizient von lpeak Temperature coefficient oflpeak IF = 20 mA (typ.) TC lpeak 0.13 0.13 0.14 nm/K Temperaturkoeffizient vonldom , Temperature coefficient ofldom , IF = 20 mA (typ.) TC ldom 0.10 0.07 0.01 nm/K Temperaturkoeffizient vonVF, Temperature coefficient ofVF, IF = 20 mA (typ.) TC VF – 2.5 – 1.7 – 2.0 mV/K

Semiconductor Group 4 1998-09-15 LY R976, LO R976 LS R976 Relative spektrale EmissionIrel = f (l),TA = 25 ˚C,IF = 20 mA Relative spectral emission V(l) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel =f (j) Radiation characteristic OHL00415 350 100 nm Irel l V l yellow orange super-red400 450 500 550 600 650 700 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚

Semiconductor Group 5 1998-09-15 LY R976, LO R976 LS R976 Durchlaßstrom IF =f (VF) Forward current TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV/IV(20 mA) =f (IF) Relative luminous intensity TA = 25 ˚C Relative LichtstärkeIV /IV(25 ˚C ) =f (TA) Relative luminous intensity IF = 20 mA V OHL00232 F FI 10 -1 010 110 10 2 mA 1.0 OHL00420 0 0 ˚C mA FI TA 10 20 30 40 50 60 70 80 100 I OHL00417 F -110 V (20 mA)I 10 -3 0 10 1 10 2 55 m A IV super-red yellow orange T OHL00416 V (25 ˚C)I -20 0 20 40 60 ˚C 100 A 0.4 0.8 1.2 1.6 2.0IV yellow orange super-red

Semiconductor Group 6 1998-09-15 LY R976, LO R976 LS R976 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) GEO06987 1.25±0.1 ±0.12 Kathode/ 1.2±0.1 ±0.11.3 ±0.10.29 0.5±0.1 ±0.10.3 0.8±0.1 Cathode mark