LSM676

LSM676 SIEMENS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

l color of package: white l for use as optical indicator l for backlighting, optical coupling into light pipes and lenses l suitable for all SMT assembly and soldering methods l available taped on reel (8 mm tape) Hyper Mini TOPLED® Hyper-Bright LED LS M676, LA M676, LO M676 LY M676

Semiconductor Group 2 1998-11-12 LS M676, LA M676, LO M676 LY M676 Streuung der Lichtstärke in einer VerpackungseinheitIV max /IV min £ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min £ 2.0. Typ Type Emissions- farbe Color of Emission Farbe der Licht- austrittsfläche Color of the Light Emitting Area Lichtstärke Luminous Intensity IF = 20 mA IV (mcd) Lichtstrom Luminous Flux IF = 20 mA F V (mlm) Bestellnummer Ordering Code LS M676-MQ LS M676-N LS M676-P LS M676-Q LS M676-NR super-red colorless clear 16 ... 125 25 ... 50 40 ... 80 63 ... 125 25 ... 200 100 (typ.) 180 (typ.) 300 (typ.) Q62703-Q3285 Q62703-Q3288 Q62703-Q3286 Q62703-Q3287 Q62703-Q3289 LA M676-NR LA M676-P LA M676-Q LA M676-R LA M676-PS amber colorless clear 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 180 (typ.) 300 (typ.) 450 (typ.) Q62703-Q3536 Q62703-Q3537 Q62703-Q3538 Q62703-Q3539 Q62703-Q3540 LO M676-NR LO M676-P LO M676-Q LO M676-R LO M676-PS orange colorless clear 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 180 (typ.) 300 (typ.) 450 (typ.) Q62703-Q3290 Q62703-Q3291 Q62703-Q3292 Q62703-Q3293 Q62703-Q3294 LY M676-NR LY M676-P LY M676-Q LY M676-R LY M676-PS yellow colorless clear 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 180 (typ.) 300 (typ.) 450 (typ.) Q62703-Q3295 Q62703-Q3296 Q62703-Q3297 Q62703-Q3298 Q62703-Q3299

Semiconductor Group 3 1998-11-12 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LA, LO LY Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM to be defined A Sperrspannung1) Reverse voltage1) VR 3V Verlustleistung Power dissipation Ptot 802) 552) mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board* ) (Padgröße ‡16 mm 2) mounted on PC board*) (pad size ‡ 16 mm2) Rth JA 5802) 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. 2) vorläufig/preliminary *) PC-board: FR4 LS M676, LA M676, LO M676 LY M676

Semiconductor Group 4 1998-11-12 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 20 mA lpeak 645 622 610 591 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 20 mA ldom 632 615 605 587 nm Spektrale Bandbreite bei 50%Irel max (typ.) Spectral bandwidth at 50%Irel max (typ.) IF = 20 mA Dl 16 16 16 15 nm Abstrahlwinkel bei 50%Iv (Vollwinkel) Viewing angle at 50%Iv 2j 120 120 120 120 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 20 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 3 V IR IR 0.01 0.01 0.01 0.01 mA mA Temperaturkoeffizient von ldom (IF = 20 mA) Temperature coefficient ofldom (IF = 20 mA) TC l 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient vonlpeak, IF = 20 mA (typ.) Temperature coefficient oflpeak, IF = 20 mA (typ.) TC l 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient vonVF, IF = 20 mA (typ.) Temperature coefficient ofVF, IF = 20 mA (typ.) TC V – 1.95 – 1.78 – 1.67 – 2.51 mV/K LS M676, LA M676, LO M676 LY M676

Semiconductor Group 5 1998-11-12 Relative spektrale EmissionIrel =f (l),TA = 25 ˚C,IF = 10 mA Relative spectral emission V(l) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel =f (j) Radiation characteristic OHL00235 400 100 450 500 550 600 650 700nm Irel l V l yellow orange amber super-red 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ LS M676, LA M676, LO M676 LY M676

Semiconductor Group 6 1998-11-12 Durchlaßstrom IF =f (VF) Forward current TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV /IV(20 mA) =f (IF) Relative luminous intensity TA = 25 ˚C Relative LichtstärkeIV /IV(25 ˚C)= f (TA) Relative luminous intensity IF = 20 mA V OHL00232 F FI 10 -1 010 110 10 2 mA 1.0 T OHL00248 A FI 0 20 40 60 80 C 100 mA yellow I OHL00233 F -110 VI 10 -3 0 10 1 10 2 55 m A (20 mA) IV superred yellow orange/amber T OHL00238 VI -20 0 20 40 60 C 100 orange A 0.4 0.8 1.2 1.6 2.0IV (25 C) yellow amber super-red super-red amber yellow orange LS M676, LA M676, LO M676 LY M676

Semiconductor Group 7 1998-11-12 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge GPL06928 0.8 1.0 0.05 0.15 1.4 1.2 1.9 2.1 2.1 2.3 1.3 1.5 Cathode marking typ. 1.5 x 1.0 0.5 0.3 Cathode marking LS M676, LA M676, LO M676 LY M676 Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter,TA = 25 ˚C Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LY Duty cycle D = parameter,TA = 25 ˚C