LSK389 NJSEMI | Alldatasheet
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Technical content
dVs. s.iv -Conaucto't \\Pioaact i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
FEATURES
en = 0.9nV/VHz (typ) IVGsi-2l = 20rnV max BVGss = 40V max G(s = 20mS (typ) 25pF typ SOURCE REPLACEMENT FOR 2SK389 ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature -65to+150°C -55to+135°C Maximum Power Dissipation Continuous Power Dissipation @ +25°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain 400mW lc(F) = 10mA VGSS = 40V VGDS = 40V TELEPHONE: (973) 376-2922 (212) 227-6005 LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Top View TO-71 SOIC-A D2o 6 T|G2 7]ss ] D2 T] S2 For equivalent single version, see LSK170 family. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL VGSI — VGS^ IDSSI IDSS2 CHARACTERISTIC Differential Gate to Source Cutoff Voltage Gate to Source Saturation Current Ratio MIN 0.9 TYP MAX UNITS mV CONDITIONS VDS = 10V, lD=1mA VDS = 1 0V, VGS = 0V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL BVcss VGS(OFF) loss IGSS IG1G2 CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Pinch-off Voltage Drain to Source Saturation Current LSK389A LSK389B LSK389C LSK389D Gate to Source Leakage Current Gate to Gate Isolation Current MIN -40 -0.15 2.6 TYP MAX 6.5 -200 ±1.0 UNITS V V mA pA uA CONDITIONS VDs = 0, !D=-100uA VDs = 10V, !D=0.1uA VGS = -30V, VDS = 0 VG1-G2 = ±45V, ID=IS = OA _ Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated) SYMBOL G,s en en Ciss CRSS CHARACTERISTIC Full Conduction Transconductance Noise Voltage Noise Voltage Common Source Input Capacitance Common Source Reverse Transfer Cap. MIN TYP 0.9 2.5 5.5 MAX 1.9 UNITS mS Nv/VHz Nv/VHz pF pF CONDITIONS VDS = 10V, VGS = 0, f=1 kHz VDS= 10V, ID = 2mA, f= 1kHz, NEW =1 Hz VDs= 10V, ID = 2mA, f= 10Hz, NBW= 1Hz Vos=10V, VGS = 0, f=1MHz, VDG = 10V, ID = 0, f=1MHz,
ORDERING INFORMATION
A B C D A SOIC-8 ' \\e 2. 6 -6.5mA 6- 12 mA 10 -20mA 17 -30mA TO-71 SOIC-8 TO-71 6L SOIC-A 8L PACKAGE DIMENSIONS TO-71 Six Lead
0.195 D,A u
0.175 0.030 MAX.
6 LEADS- 1
0.019 DIA. I 0.016 I 0.100- I 1 I \\ ' 0.046 *' r , . Q 230 0.014 rnr ' 0.209 °<"s 1 LU- t . Llk
0.210 I __
0.170 CQ21 -L, IFI3
*l 1 I IUU i ^ : i! » °-5°° M|N I n n i a.150 t 100 1 |*»-0.050 L_ Jf H^X O.OQ75 ! 1 SOIC-A o 0.2284 ID J- 0,050 ^ITI— ' ' -LLJ 0,189 -rn °196 in-, i m I 0.0040 r •"" pO*. >\\8 " 0,2440 L '' XST v«OxJ6,y DIMENSIONS IN Z^s/ INCHES
- * 0048 0.036 0.028 All dimensions in inches.