LSK389 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • colored, clear package
  • plasic package with a special design
  • high light intensity at low currents (typ. 2 mA)
  • in connection with an additional, custom built reflector suitable for backlighting of display panels
  • for optical coupling into light pipes
  • uniform illumination of a diffuser screen in front of the custom built reflector
  • solder leads with stand-off
  • available taped on reel
  • load dump resistant acc. to DIN 40839
  • Note: If the diffuser screen is tinted, the spectral transmission must be adjusted to the wavelength emitted by the LED.

LS K389, LY K389, LG K389 Semiconductor Group 2 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top – 55 … + 100 ˚C Lagertemperatur Storage temperature range Tstg – 55 … + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 7.5 mA Stoßstrom Surge current t≤ 10µs, D = 0.005 IFM 150 mA Sperrspannung Reverse voltage VR 5V Verlustleistung Power dissipation TA ≤ 25 ˚C Ptot 20 mW Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Rth JA 500 K/W

LS K389, LY K389, LG K389 Semiconductor Group 3 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LY LG Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 7.5 mA λpeak 635 586 565 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 7.5 mA λdom 628 590 570 nm Spektrale Bandbreite bei 50 %Φ rel max(typ.) Spectral bandwidth at 50 %Φ rel max (typ.) IF = 7.5 mA Δλ 45 45 25 nm Durchlaßspannung (typ.) Forward voltage (max.) IF = 2 mA VF VF 1.8 2.6 2.0 2.7 1.9 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 5 V IR IR 0.01 0.01 0.01 µA µA Kapazität (typ.) Capacitance VR = 0 V,ƒ = 1 MHz C 0 331 5 p F Schaltzeiten: Switching times: IV from 10 % to 90 % (typ.) IV from 90 % to 10 % (typ.) IF = 100 mA,tP = 10µs,RL = 50Ω tr tf 200 150 200 150 450 200 ns ns

LS K389, LY K389, LG K389 Semiconductor Group 4 Relative spektrale EmissionΦ rel =ƒ (λ),TA = 25 ˚C,IF = 7.5 mA Relative spectral emission V ( λ) = spektrale Augenempfindlichkeit Standard eye response curve AbstrahlcharakteristikΦ rel= f(ϕ) Radiation characteristic

LS K389, LY K389, LG K389 Semiconductor Group 5 Durchlaßstrom IF = f(VF) Forward current TA = 25 ˚C Zulässige ImpulsbelastbarkeitIF = f(tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C Relativer LichtstromΦ V/Φ V (2 mA) =f (IF) Relative luminous flux TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f(TA)

LS K389, LY K389, LG K389 Semiconductor Group 6 Wellenlänge der Strahlungλpeak = f(TA) Wavelength at peak emission IF = 7.5 mA Durchlaßspannung VF = f(TA) Forward voltage IF = 2 mA Dominantwellenlängeλdom = f(TA) Dominant wavelength IF = 7.5 mA Relativer LichtstromΦ V/Φ V(25 °C) =ƒ (TA) Relative luminous flux IF = 2 mA

LS K389, LY K389, LG K389 Semiconductor Group 7 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Kürzerer Lötspieß Cathode mark: Short solder lead GEX06712