LSI1013XT1G

LSI1013XT1G_15 LRC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

LESHAN RADIO COMPANY, LTD. S-LSI1013XT1G SC-89 10000/Tape&Reel

ORDERING INFORMATION

3000/Tape&Reel LSI1013XT1G LSI1013XT3G Marking MARKING DIAGRAM B = Specific Device Code M = Month Code B (Top View) Drain Gate Source B B

FEATURES

/C0068TrenchFET/C0114 Power MOSFET: 1.8-V Rated /C0068Gate-Source ESD Protected: 2000 V /C0068High-Side Switching /C0068Low On-Resistance: 1.2 /C0087 /C0068Low Threshold: 0.8 V (typ) /C0068Fast Switching Speed: 14 ns BENEFITS /C0068Ease in Driving Switches /C0068Low Offset (Error) Voltage /C0068Low-Voltage Operation /C0068High-Speed Circuits /C0068Low Battery Voltage Operation

APPLICATIONS

/C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories /C0068Battery Operated Systems /C0068Power Supply Converter Circuits /C0068Load/Power Switching Cell Phones, Pagers P-Channel 1.8-V (G-S) MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS /C00346 V Continuous Drain Current J 150 /C0095 b T A = 25/C0095C I D -400 -350 C on ti nuous D ra i n C urren t J 150 /C0095 b T A = 85/C0095C I D -300 -275 mA Pulsed Drain Current a I DM -1000 mA Continuous Source Current (diode conduction) b I S -275 -250 Maximum Power Dissipation b for SC 75 T A = 25/C0095C 175 150 Maximum Power Dissipation b for SC-75 T A = 85/C0095C P D mW Maximum Power Dissipation b for SC 89 T A = 25/C0095C P D 275 250 mW Maximum Power Dissipation b for SC-89 T A = 85/C0095C 160 140 Operating Junction and Storage Temperature Range T J , T stg −55 to 150 /C0095C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. M Rev .O 1/6 /C0068S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LSI1013XT1G S-LSI1013XT1G S-LSI1013XT3G

LESHAN RADIO COMPANY, LTD. LSI1013XT1G , S-LSI1013XT1G /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084 /C0065 /C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V GS(th) V DS = V GS , I D = –250 /C0109A –0.45 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C00344.5 V /C00341 /C00342 /C0109A V DS = –16 V, V GS = 0 V –0.3 –100 nA Zero Gate Voltage Drain Current I DSS V DS = –16 V, V GS = 0 V, T J = 85/C0095C /C0109A On-State Drain Current a I D(on) V DS = –5 V, V GS = –4.5 V –700 mA V GS = –4.5 V, I D = –350 mA 0.8 1.2 Drain-Source On-State Resistance a r DS(on) V GS = –2.5 V, I D = –300 m A 1.2 1.6 /C0087 DS(on) V GS = –1.8 V, I D = –10 m A 1.8 2.7 Forward Transconductance a g fs V DS = –10 V, I D = –250 mA 0.4 S Diode Forward Voltage a V SD I S = –150 mA, V GS = 0 V –0.8 –1.2 V Dynamic b Total Gate Charge Q g 1500 Gate-Source Charge Q gs V DS = –10 V, V GS = –4.5 V, I D = –250 mA 150 pC Gate-Drain Charge Q gd 450 Turn-On Delay Time t d(on) Rise Time t r V DD = –10 V, R L = 47 /C0087 Turn-Off Delay Time t d(off) V DD = –10 V, R L = 47 /C0087 I D /C0094 –200 mA, V GEN = –4.5 V, R G = 10 /C0087 ns Fall Time t f Notes a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. b. Guaranteed by design, not subject to production testing. Rev .O 2/6

LESHAN RADIO COMPANY, LTD. /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084 /C0065 /C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 V GS = 5 thru 3 V T J = –55/C0095C 125/C0095C 2 V 25/C0095C Output Characteristics Transfer Characteristics V DS – Drain-to-Source Voltage (V) – Drain Current (A)I D V GS – Gate-to-Source Voltage (V) – Drain Current (mA)I D 1.8 V 2.5 V – On-Resistance (r DS(on) /C0087) 100 120 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 –50 –25 0 25 50 75 100 125 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 V DS – Drain-to-Source Voltage (V) C rss C oss C iss V DS = 10 V I D = 250 mA I D – Drain Current (mA) V GS = 4.5 V I D = 350 mA V GS = 1.8 V Gate Charge On-Resistance vs. Drain Current – Gate-to-Source Voltage (V) Q g – Total Gate Charge (nC) C – Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature T J – Junction Temperature (/C0095C) (Normalized) – On-Resistance (r DS(on) /C0087) V GS = 4.5 V V GS = 2.5 V V GS = 1.8 V I D = 150 mA Rev .O 3/6 LSI1013XT1G , S-LSI1013XT1G

LESHAN RADIO COMPANY, LTD. /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084 /C0065 /C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0123456 I D = 350 mA 1000 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage – On-Resistance (r DS(on) /C0087) V SD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) I D = 200 mA T J = 125/C0095C T J = 25/C0095C T J = –55/C0095C 100 I S – Source Current (mA) –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 –50 –25 0 25 50 75 100 125 I D = 0.25 mA Threshold Voltage Variance vs. Temperature Variance (V)V GS(th) T J – Temperature (/C0095C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 –50 –25 0 25 50 75 100 125 I GSS vs. Temperature T J – Temperature (/C0095C) I GSS – (/C0109A) –50 –25 0 25 50 75 100 125 BV GSS vs. Temperature T J – Temperature (/C0095C) V GS = 4.5 V BV GSS – Gate-to-Source Breakdown Voltage (V) Rev .O 4/6 LSI1013XT1G , S-LSI1013XT1G

LESHAN RADIO COMPANY, LTD. TYPICAL CHARACTERISTICS (T A = 25/C0095C UNLESS NOTED) 1 10 60010 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA =833/C0095C/W 3. T JM – T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 11 010 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Rev .O 5/6 LSI1013XT1G , S-LSI1013XT1G

LESHAN RADIO COMPANY, LTD. NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89 Rev .O 6/6 LSI1013XT1G , S-LSI1013XT1G