LSI1012LT1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • Power MOSFET: 1.8-V Rated
  • Gate-Source ESD Protected
  • High-Side Switching
  • Low On-Resistance: 0.7Ω
  • Low Threshold: 0.8 V (typ)
  • Fast Switching Speed: 10 ns
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. BENEFITS
  • Ease in Driving Switches
  • Low Offset (Error) Voltage
  • Low-Voltage Operation
  • High-Speed Circuits
  • Low Battery Voltage Operation 3. APPLICATIONS
  • Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories.
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers 4. DEVICE MARKING AND ORDERING INFORMATION 5. MAXIMUM RATINGS(Ta = 25º C) 1.Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board. 600 500 mA400 350 IDM 1000 IS 275 250 Unit VDS 20 V −55 ~+150 ℃ PD mW Parameter Drain-Source Voltage Gate-Source Voltage TA = 25℃ TA = 85℃ Pulsed Drain Current(Note 1) Continuous Source Current (diode conduction)(Note 2) Maximum Power Dissipation VGS ±6 V 225 Symbol 5 secs Steady State LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET Marking Shipping LSI1012LT1G A2 3000/Tape&Reel Device TJ , TstgOperating Junction and Storage Temperature Range Continuous Drain Current (TJ = 150℃) (Note 2) ID SOT23(TO-236) Leshan Radio Company, LTD. Rev.C Apr. 2018 1/5 (Top View) Drain Gate Source

LSI1012LT1G,S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Static Characteristic Gate Threshold Voltage (VDS = VGS , ID = 250µ A ) Gate-Body Leakage (VDS = 0 V, VGS = ± 4.5 V) Zero Gate Voltage Drain Current (VDS = 20 V, VGS = 0 V ) (VDS = 20 V, VGS = 0 V, TJ = 85℃) On-State Drain Current(Note 1) (VDS = 5 V, VGS = 4.5 V) Drain-Source On-State Resistance(Note 1) (VGS = 4.5 V, ID = 600 mA) (VGS = 2.5 V, ID = 500 mA) (VGS = 1.8 V, ID = 350 mA) Forward Transconductance(Note 1) (VDS = 10 V, ID = 400 mA) Diode Forward Voltage(Note 1) (IS = 150 mA, VGS = 0 V) Dynamic(Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance 3.Pulse test; pulse width ≤300 µ s, duty cycle ≤ 2%. 4.Guaranteed by design, not subject to production testing. (VDD = 10 V, RL = 47Ω,ID=200 mA, VGEN = 4.5 V, RG = 10Ω) td(on) ns tr td(off) 25 tf 11 0.90.45 (VDS = 10 V, VGS = 4.5 V, ID = 250 mA) Qg pCQgs Qgd 225 Symbol Min. Max. UnitTyp. IGSS VSD nA - 5 mA - - Ω 0.53 0.85 VGS(th) V µA ± 0.5 ±1 µA 0.41 0.7 0.7 1.25 gfs S IDSS ID(on) 700 RDS(on) V 0.8 1.2 750 - 0.3 100 VGS = 0 V, VDS = 0 V, f = 1MHz VGS = 0 V, VDS = 10 V, f = 1MHz Ciss Coss Crss Ciss Coss Crss 12.2 pF pF 35.6 58.4 Leshan Radio Company, LTD. Rev.C Apr. 2018 2/5

LSI1012LT1G,S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. Rev.C Apr. 2018 3/5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 ID,Drain Current(A) VDS,Drain to Source Voltage(V) Ta=25℃ VGS=1V VGS=1.2V VGS=1.4V VGS=1.6V,1.8V, 2V,3V,4V,4.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 ID,Drain Current(A) VGS,Gate to Source Voltage(V) VDS=5V 125℃25℃ -50℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.4 0.6 0.8 1 IS,Diode Forward Current(A) VSD,Diode Forward Voltage(V) 125℃ 25℃ -50℃ 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0 0.2 0.4 0.6 0.8 1 RDSON,ON resistance(Ω) ID,Drain Current(A) Ta=25℃ VGS=1.8V VGS=2.5V VGS=4.5V ID vs. VDS ID vs. VGS IS vs. VSD RDSON vs. ID

LSI1012LT1G,S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. Rev.C Apr. 2018 4/5 0 2 4 6 RDSON,On Resistance(Ω) VGS,Gate to Source Voltage(V) ID=200mA 125℃ 25℃ -50℃ 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 RDSON ON Resistance(Ω) TJ,Temperature(℃) VGS=1.8V,ID=350mA VGS=4.5V,ID=600mA 100 110 120 0 2 4 6 8 10 Ciss(pF) VDS Drain To Source Voltage(V) f=1MHz Ta=25℃ 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 -50 -25 0 25 50 75 100 125 VGSTH(V) Tj,Temperature(℃) ID=0.25mA RDSON vs. RDSON vs. TJ Ciss VGSTH vs.

LSI1012LT1G,S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 9.SOLDERING FOOTPRINT DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.11 0.114 0.12 D 2.80 2.9 3.04 0.07 0.075 0.081 e 1.78 1.9 2.04 Leshan Radio Company, LTD. Rev.C Apr. 2018 5/5