LSA670-HL

LSA670 SIEMENS | Alldatasheet

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l color of package: white l for use as optical indicator l for backlighting, optical coupling into light pipes and lenses l suitable for all SMT assembly and reflow soldering methods l available taped on reel (12 mm tape) l load dump resistant acc. to DIN 40839 SIDELED ® LS A670, LO A670, LY A670 LG A670, LP A670

Semiconductor Group 2 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Streuung der Lichtstärke in einer VerpackungseinheitIV min/IV min £ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min £ 2.0. Typ Type Emissions- farbe Color of Emission Farbe der Lichtaustritts- fläche Color of the Light Emitting Area Lichtstärke Luminous Intensity IF = 10 mA IV (mcd) Lichtstrom Luminous Flux IF = 10 mA F V (mlm) Bestellnummer Ordering Code LS A670-HL LS A670-J LS A670-K LS A670-L LS A670-JM 18 (typ.) 30 (typ.) 45 (typ.) Q62703-Q3908 Q62703-Q2833 Q62703-Q2834 Q62703-Q3840 Q62703-Q2835 LO A670-HK LO A670-J LO A670-K LO A670-L LO A670-JM 18 (typ.) 30 (typ.) 45 (typ.) Q62703-Q2547 Q62703-Q2837 Q62703-Q3204 Q62703-Q2836 Q62703-Q2838 LY A670-HK LY A670-J LY A670-K LY A670-L LY A670-JM 18 (typ.) 30 (typ.) 45 (typ.) Q62703-Q2552 Q62703-Q2839 Q62703-Q2840 Q62703-Q3920 Q62703-Q2841 LG A670-HK LG A670-J LG A670-K LG A670-L LG A670-JM 18 (typ.) 30 (typ.) 45 (typ.) Q62703-Q2543 Q62703-Q2842 Q62703-Q2843 Q62703-Q3192 Q62703-Q2844 LP A670-FJ LP A670-G LP A670-H LP A670-J LP A670-GK 8 (typ.) 12 (typ.) 18 (typ.) Q62703-Q2549 Q62703-Q2845 Q62703-Q2846 Q62703-Q3214 Q62703-Q2847

Semiconductor Group 3 1998-11-12 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 0.5 A Sperrspannung Reverse voltage VR 5V Verlustleistung Power dissipation Ptot 100 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board* ) (Padgröße je ‡16 mm 2) mounted on PC board*) (pad size ‡ 16 mm2each) Rth JA 430 K/W *) PC-board: FR4 LS A670, LO A670, LY A670 LG A670, LP A670

Semiconductor Group 4 1998-11-12 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LO LY LG LP Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 10 mA lpeak 635 610 586 565 557 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 10 mA ldom 628 605 590 570 560 nm Spektrale Bandbreite bei 50 %Irel max (typ.) Spectral bandwidth at 50 %Irel max (typ.) IF = 10 mA Dl 45 40 45 25 22 nm Abstrahlwinkel bei 50 %Iv (Vollwinkel) Viewing angle at 50 %Iv 2j 120 120 120 120 120 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 10 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 5 V IR IR 0.01 0.01 0.01 0.01 0.01 mA mA Kapazität (typ.) Capacitance VR = 0 V, f = 1 MHz C 0 1 28 1 01 51 5p F Schaltzeiten: Switching times: IV from 10 % to 90 % (typ.) IV from 90 % to 10 % (typ.) IF = 100 mA, tp = 10ms, RL = 50W tr tf 300 150 300 150 300 150 450 200 450 200 ns ns LS A670, LO A670, LY A670 LG A670, LP A670

Semiconductor Group 5 1998-11-12 Relative spektrale EmissionIrel =f (l),TA = 25 ˚C,IF = 10 mA Relative spectral emission V(l) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel =f (j) Radiation characteristic rel l OHL01698 V l 100 400 450 500 550 600 650 700 nm I pure-greengreen yellow orange super-red red hyper-redblue 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ LS A670, LO A670, LY A670 LG A670, LP A670

Semiconductor Group 6 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Durchlaßstrom IF =f (VF) Forward current TA = 25 ˚C Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C 10 -1 V pure-green super-red orange/yellow green OHL02145 IF FV 010 110 210 mA OHL01686 s10-5 10-4 10-3 10-2 10-1 100 101 t D I T T P F tP= D = 0.005 0.01 0.02 0.05 0.2 0.5 DC 10 1 IF t 210 0.1 p 10 3 mA Relative LichtstärkeIV/IV(10 mA) =f (IF) Relative luminous intensity TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) V V (10 mA) 10 -1 0 10 10 12 10mA red yellow green super-red orange pure-green 10 -3 OHL02146 FI -210 -110 010 110 I I OHL01661 IF 0 100604020 A 800 T mA

Semiconductor Group 7 1998-11-12 Wellenlänge der Strahlunglpeak = f (TA) Wavelength at peak emission IF = 10 mA Durchlaßspannung VF =f (TA) Forward voltage IF = 10 mA Dominantwellenlänge ldom = f (TA) Dominant wavelength IF = 10 mA Relative LichtstärkeIV /IV(25 ˚C ) =f (TA) Relative luminous intensity IF = 10 mA green yellow orange super-red pure-green 550 OHL02104 l peak AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 green super-red orange yellow pure-green 1.4 OHL02106 VF AT 0 20 40 60 80 100 1.6 1.8 2.0 2.2 V 2.4 yellow green orange super-red pure-green 550 OHL02105 l dom AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 yellow green orange super-red pure-green 0.0 OHL02150 AT 02 0 4 0 6 0 8 0 1 0 0 V VI I 0.4 0.8 1.2 1.6 2.0 (25 ˚C) LS A670, LO A670, LY A670 LG A670, LP A670

Semiconductor Group 8 1998-11-12 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge 1.1 0.92.54 spacing (2.4) 2.8 2.4 4.2 3.8 (2.85) 0.7 4.2 3.8 (2.9) 3.8 3.4(R1) Cathode marking Cathode Anode (1.4) (0.3) GPL06880 LS A670, LO A670, LY A670 LG A670, LP A670