LS5436 SIEMENS | Alldatasheet

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l colored, diffused package l optical coupling into light pipes l for use as optical indicator l solder leads with stand-off l available taped on reel l load dump resistant acc. to DIN 40839

Semiconductor Group 2 1998-09-18 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LO, LA LY Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 1 0.2 A Sperrspanung1) Reverse voltage1) VR 3V Verlustleistung Power dissipation TA £ 25 ˚C Ptot 80 55 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Rth JA 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. LS 5436, LA 5436, LO 5436, LY 5436

Semiconductor Group 3 1998-09-18 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 20 mA lpeak 645 622 610 591 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 20 mA ldom 632 615 605 587 nm Spektrale Bandbreite bei 50%Irel max (typ.) Spectral bandwidth at 50%Irel max (typ.) IF = 20 mA Dl 16 16 16 15 nm Abstrahlwinkel bei 50%Iv (Vollwinkel) Viewing angle at 50%Iv 2j 30 30 30 30 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 20 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 3 V IR IR 0.01 0.01 0.01 0.01 mA mA Temperaturkoeffizient von ldom (IF = 20 mA) Temperature coefficient ofldom (IF = 20 mA) TC l 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient vonlpeak, IF = 20 mA (typ.) Temperature coefficient oflpeak, IF = 20 mA (typ.) TC l 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient vonVF, IF = 20 mA (typ.) Temperature coefficient ofVF, IF = 20 mA (typ.) TC V – 1.95 – 1.78 – 1.67 – 2.51 mV/K LS 5436, LA 5436, LO 5436, LY 5436

Semiconductor Group 4 1998-09-18 Relative spektrale EmissionIrel= f(l),TA = 25 ˚C,IF = 20 mA Relative spectral emission V ( l) = spektrale Augenempfindlichkeit Standard eye response curve AbstrahlcharakteristikIrel= f(j) Radiation characteristic OHL00235 400 100 450 500 550 600 650 700nm Irel l V l yellow orange amber super-red OHL00314 02 0 40 60 80 100 1200.40.60.81.0 100 010203040 0.2 0.4 0.6 0.8 1.0f LS 5436, LA 5436, LO 5436, LY 5436

Semiconductor Group 5 1998-09-18 Durchlaßstrom IF =f (VF) Forward current TA = 25˚C Relative LichtstärkeIV/IV(20 mA) =f (IF) Relative luminous intensity TA = 25˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV /IV(25˚C ) =f (TA) Relative luminous intensity IF = 20 mA V OHL00232 F FI 10 -1 010 110 10 2 mA 1.0 I OHL00233 F -110 VI 10 -3 0 10 1 10 2 55 m A (20 mA) IV superred yellow orange/amber T OHL00248 A FI 0 20 40 60 80 C 100 mA yellow T OHL00238 VI -20 0 20 40 60 C 100 orange A 0.4 0.8 1.2 1.6 2.0IV (25 C) yellow amber super-red super-red amber yellow orange LS 5436, LA 5436, LO 5436, LY 5436

Semiconductor Group 6 1998-09-18 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Kürzerer Lötspieß Cathode mark: Short solder lead LS 5436, LA 5436, LO 5436, LY 5436 Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter,TA = 25 ˚C OHL00322 110 -210 IF A 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02 10 -1 10 0 Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LY Duty cycle D = parameter,TA = 25 ˚C OHL00316 010 -210 IF A 10 -1 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02