LS5116_SOT-23 MICROSS | Alldatasheet
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DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(on) ≤ 150Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +200°C Operating Junction Temperature ‐ 55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 1 ‐‐ 4 VDS = ‐15V, ID = ‐1nA VGS(F) Gate to Source Forward Voltage ‐‐ ‐ 0.7 ‐ 1 IG = ‐1mA, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ ‐ 1.0 ‐‐ VGS = 0V, ID = ‐15mA ‐‐ ‐ 0.7 ‐‐ VGS = 0V, ID = ‐7mA IDSS Drain to Source Saturation Current (Note 2) ‐ 5 ‐‐ ‐ 25 mA VDS = ‐15V, VGS = 0V IGSS Gate Reverse Current ‐‐ 5 500 pA VGS = 20V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 5 ‐‐ VDS = ‐15V, ID = ‐1mA ID(off) Drain Cutoff Current ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 12V ‐‐ ‐ 10 ‐‐ VDS = ‐15V, VGS = 7V ‐‐ ‐ 10 ‐ 500 VDS = ‐15V, VGS = 5V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = ‐1mA, VGS = 0V LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 4.5 ‐‐ mS VDS = ‐15V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 20 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ 20 25 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 5 ‐‐ VDS = 0V, VGS = 12V, f = 1MHz ‐‐ 6 ‐‐ VDS = 0V, VGS = 7V, f = 1MHz ‐‐ 6 7 VDS = 0V, VGS = 5V, f = 1MHz en Equivalent Noise Voltage ‐‐ 20 ‐‐ nV/√Hz VDG = 10V, ID = 10mA , f = 1kHz LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 12 ns VGS(L) = ‐5V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 30 td(off) Turn Off Time 10 tf Turn Off Fall Time 50 LS5116 SWITCHING CIRCUIT PARAMETERS VDD ‐ 6V VGG 8V RL 2kΩ RG 390Ω ID(on) ‐ 3mA LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The SOT-23 provides a low cost option and ease of manufacturing. (See Packaging Information). LS5116 Applications: Analog Switches Commutators Cho ppers LS5116 Benefits: Low On Resistance I D(off) ≤ 500 pA Switches directl y from TTL logic Available Packages: LS5116 in SOT-23 LS5116 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% SWITCHING TEST CIRCUIT SOT-23 (Top View)