LS3380 SIEMENS | Alldatasheet

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Features

l colored, diffused package l for use as optical indicator l solder leads with stand-off l available taped on reel l load dump resistant acc. to DIN 40839

Semiconductor Group 2 1998-07-13 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top – 55 … + 100 °C Lagertemperatur Storage temperature range Tstg – 55 … + 100 °C Sperrschichttemperatur Junction temperature Tj + 100 °C Durchlaßstrom Forward current IF 40 mA Stoßstrom Surge current t £ 10 ms, D = 0.005 IFM 0.5 A Sperrspannung Reverse voltage VR 5V Verlustleistung Power dissipation TA £ 25 °C Ptot 140 mW Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Rth JA 400 K/W LS 3380, LY 3380, LG 3380

Semiconductor Group 3 1998-07-13 Kennwerte (TA = 25°C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LY LG Wellenlänge des emittierten Lichtes(typ.) Wavelength at peak emission(typ.) IF = 20 mA lpeak 635 586 565 nm Dominantwellenlänge(typ.) Dominant wavelength(typ.) IF = 20 mA ldom 628 590 570 nm Spektrale Bandbreite bei 50 % Irel max(typ.) Spectral bandwidth at 50 % Irel max(typ.) IF = 20 mA Dl 45 45 25 nm Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV 2j 100 100 100 deg. Durchlaßspannung(typ.) Forward voltage(max.) IF = 10 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom(typ.) Reverse current(max.) VR = 5 V IR IR 0.01 0.01 0.01 mA mA Kapazität(typ.) Capacitance VR = 0 V, ƒ = 1 MHz C 0 12 10 15 pF Schaltzeiten: Switching times: IV from 10 % to 90 %(typ.) IV from 90 % to 10 %(typ.) IF = 100 mA, tP = 10 ms, RL = 50 W tr tf 300 150 300 150 450 200 ns ns LS 3380, LY 3380, LG 3380

Semiconductor Group 4 1998-07-13 Relative spektrale Emission Irel = f (l), TA = 25°C, IF = 20 mA Relative spectral emission V ( l) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f (j) Radiation characteristic LS 3380, LY 3380, LG 3380

Semiconductor Group 5 1998-07-13 Durchlaßstrom IF = f (VF) Forward current TA = 25°C Zulässige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25°C Relative Lichtstärke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25°C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) 10 -1 V OHL01263 IF FV 010 110 210 mA V V (10mA) 10 -1 0 10 10 12 10mA 10 -3 OHL01632 FI -210 -110 010 110 I I green super-red yellow LS 3380, LY 3380, LG 3380

Semiconductor Group 6 1998-07-13 Wellenlänge der Strahlung lpeak = f (TA) Wavelength at peak emission IF = 20 mA Durchlaßspannung VF = f (TA) Forward voltage IF = 10 mA Dominantwellenlänge ldom = f (TA) Dominant wavelength IF = 20 mA Relative Lichtstärke IV/IV(25 °C) = f (TA) Relative luminous intensity IF = 10 mA green yellow super-red 550 OHL01672 l peak AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 1.4 OHL01674 VF AT 0 20 40 60 80 100 1.6 1.8 2.0 2.2 V 2.4 green super-red, yellow yellow green super-red 550 OHL01673 l dom AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 yellow green super-red 0.0 OHL01675 AT 0 20 40 60 80 100 V V (25 ˚C)I I 0.4 0.8 1.2 1.6 2.0 LS 3380, LY 3380, LG 3380

Semiconductor Group 7 1998-07-13 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Kürzerer Lötspieß Cathode mark: Short solder lead 0.4 0.6 3.1 3.4 Area not flat 5.7 6.1 ø2.7 ø2.9 4.8 4.4 3.7 3.5 27.0 29.0 spacing 2.54 mm 0.8 0.4 0.4 0.7 0.4 0.6 1.2 1.8 GEX06710 0.9 1.1 Collector/ 2.1 2.7 Chip position Cathode LS 3380, LY 3380, LG 3380