LS3366

LS3366 SIEMENS | Alldatasheet

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Features

l colored, diffused package l optical coupling into light pipes l for use as optical indicator l solder leads with stand-off l available taped on reel l load dump resistant acc. to DIN 40839

Semiconductor Group 2 1998-09-18 Streuung der Lichtstärke in einer VerpackungseinheitIV max /IV min £ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min £ 2.0. Typ Type Emissionsfarbe Color of Emission Gehäusefarbe Color of Package Lichtstärke Luminous Intensity IF = 20 mA IV (mcd) Bestellnummer Ordering Code LS 3366-NR LS 3366-P LS 3366-Q LS 3366-R LS 3366-PS super-red red diffused 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 Q62703-Q3457 Q62703-Q3458 Q62703-Q3459 Q62703-Q3460 Q62703-Q3461 LA 3366-PS LA 3366-Q LA 3366-R LA 3366-S LA 3366-QT amber orange diffused 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 Q62703-Q3881 Q62703-Q3882 Q62703-Q3883 Q62703-Q3884 Q62703-Q3885 LO 3366-PS LO 3366-Q LO 3366-R LO 3366-S LO 3366-QT orange orange diffused 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 Q62703-Q3127 Q62703-Q3172 Q62703-Q3173 Q62703-Q3174 Q62703-Q3175 LY 3366-PS LY 3366-Q LY 3366-R LY 3366-S LY 3366-QT yellow yellow diffused 40 ... 320 63 ... 125 100 ... 200 160 ... 320 63 ... 500 Q62703-Q3462 Q62703-Q3464 Q62703-Q3465 Q62703-Q3463 Q62703-Q3466 LS 3366, LA 3366, LO 3366, LY 3366

Semiconductor Group 3 1998-09-18 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LO, LA LY Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 1 0.2 A Sperrspanung1) Reverse voltage1) VR 3V Verlustleistung Power dissipation TA £ 25 ˚C Ptot 80 55 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Rth JA 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. LS 3366, LA 3366, LO 3366, LY 3366

Semiconductor Group 4 1998-09-18 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 20 mA lpeak 645 622 610 591 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 20 mA ldom 632 615 605 587 nm Spektrale Bandbreite bei 50%Irel max (typ.) Spectral bandwidth at 50%Irel max (typ.) IF = 20 mA Dl 16 16 16 15 nm Abstrahlwinkel bei 50%Iv (Vollwinkel) Viewing angle at 50%Iv 2j 70 70 70 70 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 20 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 3 V IR IR 0.01 0.01 0.01 0.01 mA mA Temperaturkoeffizient von ldom (IF = 20 mA) Temperature coefficient ofldom (IF = 20 mA) TC l 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient vonlpeak, IF = 20 mA (typ.) Temperature coefficient oflpeak, IF = 20 mA (typ.) TC l 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient vonVF, IF = 20 mA (typ.) Temperature coefficient ofVF, IF = 20 mA (typ.) TC V – 1.95 – 1.78 – 1.67 – 2.51 mV/K LS 3366, LA 3366, LO 3366, LY 3366

Semiconductor Group 5 1998-09-18 Relative spektrale EmissionIrel= f(l),TA = 25 ˚C,IF = 20 mA Relative spectral emission V ( l) = spektrale Augenempfindlichkeit Standard eye response curve AbstrahlcharakteristikIrel= f(j) Radiation characteristic OHL00235 400 100 450 500 550 600 650 700nm Irel l V l yellow orange amber super-red 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 100 02 0 40 60 80 100 120 LS 3366, LA 3366, LO 3366, LY 3366

Semiconductor Group 6 1998-09-18 Durchlaßstrom IF =f (VF) Forward current TA = 25˚C Relative LichtstärkeIV/IV(20 mA) =f (IF) Relative luminous intensity TA = 25˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV /IV(25˚C ) =f (TA) Relative luminous intensity IF = 20 mA V OHL00232 F FI 10 -1 010 110 10 2 mA 1.0 I OHL00233 F -110 VI 10 -3 0 10 1 10 2 55 m A (20 mA) IV superred yellow orange/amber T OHL00248 A FI 0 20 40 60 80 C 100 mA yellow T OHL00238 VI -20 0 20 40 60 C 100 orange A 0.4 0.8 1.2 1.6 2.0IV (25 C) yellow amber super-red super-red amber yellow orange LS 3366, LA 3366, LO 3366, LY 3366

Semiconductor Group 7 1998-09-18 LS 3366, LA 3366, LO 3366, LY 3366 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Kürzerer Lötspieß Cathode mark: Short solder lead 0.4 0.6 3.1 3.4 Area not flat 5.7 6.1 ø2.7 ø2.9 4.8 4.4 3.7 3.5 27.0 29.0 spacing 2.54 mm 0.8 0.4 0.4 0.7 0.4 0.6 1.2 1.8 GEX06710 0.9 1.1 Collector/ 2.1 2.7 Chip position Cathode Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter,TA = 25 ˚COHL00322 110 -210 IF A 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02 10 -1 10 0 Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LY Duty cycle D = parameter,TA = 25 ˚C OHL00316 010 -210 IF A 10 -1 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02