LS3336

LS3336 SIEMENS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

l colorless, clear package l optical coupling into light pipes l for use as optical indicator l solder leads with stand-off l available taped on reel l load dump resistant acc. to DIN 40839

Semiconductor Group 2 1998-09-18 Streuung der Lichtstärke in einer VerpackungseinheitIV max /IV min £ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min £ 2.0. Typ Type Emissionsfarbe Color of Emission Gehäusefarbe Color of Package Lichtstärke Luminous Intensity IF = 20 mA IV (mcd) Bestellnummer Ordering Code LS 3336-QT LS 3336-R LS 3336-S LS 3336-T LS 3336-RU super-red colorless clear 63 ... 500 100 ... 200 160 ... 320 250 ... 500 100 ... 800 Q62703-Q3482 Q62703-Q3484 Q62703-Q3485 Q62703-Q3813 Q62703-Q3486 LA 3336-RU LA 3336-S LA 3336-T LA 3336-U LA 3336-SV amber colorless clear 100 ... 800 160 ... 320 250 ... 500 400 ... 800 160 ... 1250 Q62703-Q3554 Q62703-Q3551 Q62703-Q3552 Q62703-Q3553 Q62703-Q3555 LO 3336-RU LO 3336-S LO 3336-T LO 3336-U LO 3336-SV orange colorless clear 100 ... 800 160 ... 320 250 ... 500 400 ... 800 160 ... 1250 Q62703-Q3144 Q62703-Q3176 Q62703-Q3170 Q62703-Q3307 Q62703-Q3177 LY 3336-RU LY 3336-S LY 3336-T LY 3336-U LY 3336-SV yellow colorless clear 100 ... 800 160 ... 320 250 ... 500 400 ... 800 160 ... 1250 Q62703-Q3487 Q62703-Q3489 Q62703-Q3490 Q62703-Q3814 Q62703-Q3491 LS 3336, LA 3336, LO 3336, LY 3336

Semiconductor Group 3 1998-09-18 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS, LO, LA LY Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 20 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 1 0.2 A Sperrspanung1) Reverse voltage1) VR 3V Verlustleistung Power dissipation TA £ 25 ˚C Ptot 80 55 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Rth JA 500 K/W 1) Belastung in Sperrichtung sollte vermieden werden. 1) Reverse biasing should be avoided. LS 3336, LA 3336, LO 3336, LY 3336

Semiconductor Group 4 1998-09-18 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 20 mA lpeak 645 622 610 591 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 20 mA ldom 632 615 605 587 nm Spektrale Bandbreite bei 50%Irel max (typ.) Spectral bandwidth at 50%Irel max (typ.) IF = 20 mA Dl 16 16 16 15 nm Abstrahlwinkel bei 50%Iv (Vollwinkel) Viewing angle at 50%Iv 2j 50 50 50 50 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 20 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 3 V IR IR 0.01 0.01 0.01 0.01 mA mA Temperaturkoeffizient von ldom (IF = 20 mA) Temperature coefficient ofldom (IF = 20 mA) TC l 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient vonlpeak, IF = 20 mA (typ.) Temperature coefficient oflpeak, IF = 20 mA (typ.) TC l 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient vonVF, IF = 20 mA (typ.) Temperature coefficient ofVF, IF = 20 mA (typ.) TC V – 1.95 – 1.78 – 1.67 – 2.51 mV/K LS 3336, LA 3336, LO 3336, LY 3336

Semiconductor Group 5 1998-09-18 Relative spektrale EmissionIrel= f(l),TA = 25 ˚C,IF = 20 mA Relative spectral emission V ( l) = spektrale Augenempfindlichkeit Standard eye response curve AbstrahlcharakteristikIrel= f(j) Radiation characteristic OHL00235 400 100 450 500 550 600 650 700nm Irel l V l yellow orange amber super-red 0.8 100 1.0 0.40.6 0 0.2 0.4 40 30 20 0.6 0.8 1.0f 10020 40 8060 120 OHL01646 LS 3336, LA 3336, LO 3336, LY 3336

Semiconductor Group 6 1998-09-18 Durchlaßstrom IF =f (VF) Forward current TA = 25˚C Relative LichtstärkeIV/IV(20 mA) =f (IF) Relative luminous intensity TA = 25˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) Relative LichtstärkeIV /IV(25˚C ) =f (TA) Relative luminous intensity IF = 20 mA V OHL00232 F FI 10 -1 010 110 10 2 mA 1.0 I OHL00233 F -110 VI 10 -3 0 10 1 10 2 55 m A (20 mA) IV superred yellow orange/amber T OHL00248 A FI 0 20 40 60 80 C 100 mA yellow T OHL00238 VI -20 0 20 40 60 C 100 orange A 0.4 0.8 1.2 1.6 2.0IV (25 C) yellow amber super-red super-red amber yellow orange LS 3336, LA 3336, LO 3336, LY 3336

Semiconductor Group 7 1998-09-18 LS 3336, LA 3336, LO 3336, LY 3336 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennzeichnung: Kürzerer Lötspieß Cathode mark: Short solder lead 0.4 0.6 3.1 3.4Area not flat 5.7 6.1 ø2.7 ø2.9 4.8 4.4 3.7 3.5 27.0 29.0 spacing 2.54mm 0.8 0.4 0.4 0.7 0.4 0.6 1.2 1.8 GEX06951 0.9 1.1 Cathode Approx. weight 0.15 g Cathode Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter,TA = 25 ˚C OHL00322 110 -210 IF A 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02 10 -1 10 0 Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability LY Duty cycle D = parameter,TA = 25 ˚C OHL00316 010 -210 IF A 10 -1 10 -5 pt -410 -310 -210 -110 010 110 210s FI T pt pt T 0.5 0.2 0.1 D = 0.005 0.01 0.05 0.02