LS12052BD33

LS12052BD33 LITTELFUSE | Alldatasheet

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Technical content

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Features and Benefits RoHS Pb

Description

The LS12052BD33 family of integrated load switches provides an easy circuit protection to power the system. The device uses few external components and provides multiple protection modes. They are a robust defense against overload, short circuit, input voltage surge, excessive inrush current and reverse current blocking with an external NFET. The switch’s low R DS(ON) helps to reduce power loss during normal operation. Current limit level can be set with a single external resistor. Input over voltage events are protected by internal clamp circuitry to a safe output voltage. Programmable soft-start controls the slew rate of the output voltage to limit inrush current during plug in. It integrates thermal fold-back function and over temperature shutdown protection. The BFET pin is provided to drive an external NFET which can be connected “Back to Back” with the LS12052BD33 output. The external NFET gate is driven by BFET to prevent current flow from the load to the source. LS12052BD33 is available in small DFN 3mm x 3mm-10 package. ■ Wide Input Voltage Range from 2.7V to 18V ■ Extremely Low RDS(ON) for the Integrated Protection Switch: 25mΩ ■ External Programmable Soft- Start Time ■ External Programmable Current Limit ■ Support Reverse Current Blocking ■ Short-circuit Protection ■ Fixed Over-voltage 14.4V Output Voltage Clamp ■ Accurate 1 .29V EN Pin Turn- on Threshold ■ Thermal Shutdown Protection& Auto Recovery ■ DFN3×3_10L Packages ■ Pb-Free and RoHS Compliant

Applications

■ HDD and SSD Drives ■ Adapter Powered Devices ■ Notebook PC ■ PCI, PCIe Cards ■ Industry Pinout Designation OUT IN 5 OUT6 SS IN GND

4 OUT

Pin # Pin Name Description 3,4,5 IN Power input pin.

9 BFET

External NFET gate driver. Control an external NFET which can be connected “Back to Back” with the LS12052BD33 output to prevent current flowing from the load to the source. Float this pin if it is not used.

10 ILIM

Current limit program pin. Program the current limit by connecting a resister to ground. 1 SS Soft Start time program pin. Connect a capacitor to ground to program the soft start time. 2 EN Enable interface pin. EN has accurate ON/OFF threshold of 1 .29V and 1 .19V respectively. Pull it above ON threshold to enable the IC. Pull it below OFF threshold to disable the IC. 6,7 , 8 OUT Power output pin. EP GND Ground pin. Pin Description IN IN EN BFET OUT OUT ILIM SS GND VIN 10µF CIN1 12052BD33 VOUT(3A) 10µF CO1 RLIM CSS 10nF IN OUT (Current Limit=3.5A) 25m/uni03A9 101 (2.4mS) CIN2 0.1µF 0.1µF CO2 NFET CEN 0.1µF REN 10K Typical Applications

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Absolute Maximum Rating (Reference to GND) * Notes:Stress exceeding those listed “Absolute Maximum Ratings” may damage the device. Symbol Value Units VIN -0.3 to +20 V BFET -0.3 to VIN+6 V EN -0.3 to +20 V The other Pins -0.3 to +6.5 V Junction Temperature Range -40 to +150 °C Storage Temperature Range -65 to +150 °C ESD, Human Body Model (HBM) ±2000 V Lead Temperature (Soldering 10s) 260 °C Recommend Operating Conditions Symbol Value Units Input Voltage (VIN) +2.7 to +18 V Junction Temperature Range +125 °C * Notes: The device is not guaranteed to function outside of the recommended operating conditions. Symbol Value Units Maximum Power Dissipation (TA=25°C ) 2.6 W Thermal Resistance (θJA) 38 °C/W Thermal Resistance (θJC) 8 °C/W Note1: Measured on JESD51-7, 4-Layer PCB. Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature TJ_MAX, the junction to ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD_MAX= (TJ_MAX-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Thermal information Soft-start UVLO Charge Pump IN SS EN GND or Thermal Detect Limit Current VOUT Clamping Driver OUT ILIM BFET 2µ A SWEN VCP Discharge control R=120 /uni03A9 170/uni03A9 Functional Block Diagram

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Symbol Parameter T est Conditions Min Ty p Max Unit VIN Input Voltage Range 2.7 18 V IBIAS Quiescent Current 250 280 µA ISHDN Shutdown Current VEN=0V 10 13 µA VENR EN Turn-on Threshold EN Rising 1 .24 1 .29 1 .34 V VENF EN Turn-off Threshold EN Falling 1. 14 1. 19 1 .24 V VENHYS EN Hysteresis 100 mV IEN EN Input Leakage Current 0V ≤ VEN ≤ 5V -200 200 nA ROUTdis Output Discharging Resistance VEN=0V 120 Ω VCLP Clamping Output Voltage 13.8 14.4 15.0 V VUVLO Input UVLO Threshold VIN Rising 3.4 3.6 3.8 V VHYS UVLO hysteresis VIN Falling 300 mV RDSON Protection FET RON 25 mΩ IINLIM Current Limit Program Range 1 5 A IINLIM Current Limit RLIM=2.7kΩ 3.6 4 4.5 A KLIM Current Limit Setting Factor IINLIM=1A~5A 7. 4 10.5 13.6 A*kΩ TSS Soft-start Time CSS=100nF 20 29 38 msec SS float 1. 2 1. 7 2.2 msec IBFET BFET Charging current VBFET=VOUT 2 µA VBFET BFET Regulation Voltage VIN+4V V BFET Clamp Voltage VOUT+7 .5V V RBFETdis BFET Discharging Resistor VEN=0V 170 Ω TSD Thermal Shutdown Temperature 140 °C THYS Thermal Shutdown Hysteresis 20 °C TLIIM Junction Temperature Regulation 125 °C Electrical Characteristics (TA = +25°C, V IN=12V, RLIM=10kΩ, CSS=100nF, CIN=10µF, unless otherwise specified)

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Current Limit Vs Rlimit 12 2.5 3 3.5 4 4.5 5 RLIMIT(KΩ) ILIMIT(A) Programmable Current Limit (RLIM=3.3K) 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 25-40- 20 04 56 58 5 Current Limit(A) TEMP(ij) Typical Performance Characteristics CIN=10µF, COUT=10µF, CSS=10nF, TA=+25°C) Vin Power On Vin Power Off 10ms/div VIN VOUT 5V/div 5V/div Iout 1A/div VIN=12V VOUT=12V IOUT=0A VIN 1s/div VOUT 5V/div 5V/div Iout 1A/div VIN=12V VOUT=12V IOUT=0A Vin Power On Vin Power Off VIN 10ms/div 5V/div VOUT Iout 5V/div 2A/div VIN=12V VOUT=12V IOUT=5A VIN 10ms/div VOUT 5V/div Iout 5V/div 2A/div VIN=12V VOUT=12V IOUT=5A

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control EN Power On EN Power Off VIN 5V/div VOUT 5V/div Iout EN 1A/div 2V/div 1s/div VIN=12V VOUT=12V IOUT=0A Iout 1A/div VIN 1s/div 5V/div VOUT EN 5V/div 2V/div VIN=12V VOUT=12V IOUT=0A VIN VOUT 5V/div 5V/div Iout EN 2A/div 2V/div VIN=12V VOUT=12V IOUT=5A 200us/div EN Power On EN Power Off Short Protection Short Protection Iout 1A/div VIN 4ms/div VOUT 5V/div 5V/div VIN=12V VOUT=12V IOUT=0A VIN 2ms/div 5V/div VOUT 5V/div Iout 1A/div VIN=12V VOUT=12V IOUT=0A VIN 4ms/div VOUT 5V/div 5V/div Iout EN 2A/div 2V/div VIN=12V VOUT=12V IOUT=5A

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Detailed Description The LS12052BD33 is a current limit load switch with integrated power switch that is used to manage current/voltage/start-up voltage ramp to the connected load. A high level on EN pin enables the internal MOSFET. As VIN rises, the internal MOSFET of the device will start conducting and allow current to flow from IN to OUT. When EN is held low, internal MOSFET is turned off. User also has the ability to control the output voltage ramp time by connecting a program capacitor between SS pin and GND. After a successful start-up sequence, the device will actively monitors its load current and input voltage, ensuring that the overload current limit I LIMT programmed by pin I LIMT is not exceeded. It also monitor input voltage and ensures any spikes are safely clamped to pre-determined level at the output. This keeps the output device safe from harmful voltage and current transients. The device also has built-in thermal sensor. In the event device temperature (TJ) exceeds thermal regulation point, current limit will be decreased until the die junction temperature T J is regulated at T LIM 125°C. When device temperature (T J) exceeds TSD, typically 140°C, the thermal shutdown circuitry will shut down the internal MOSFET thereby disconnecting the load from the supply. The LS12052BD33 device will remain off during a cooling period until device temperature falls below TSD-20°C, after which it will attempt to restart. Soft Start Time Soft Start Time 2ms/div EN 2V/div VOUT SS 5V/div 1V/div VOUT=12V IOUT=0A Css=10nF EN 2V/div VOUT SS 5V/div 1V/div 10ms/div VOUT=12V IOUT=0A Css=100nF Turnoff Delay to BFET Turnoff Delay to BFET EN 20µs/div 5V/div VOUT BFET 5V/div 5V/div VIN=12V VOUT=12V IOUT=0A VIN 10ms/div 5V/div VOUT BFET 5V/div 5V/div VIN=12V VOUT=12V IOUT=0A

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control

Application Information

Input and Output Capacitor Selection Recommend to bypass IN and OUT to GND with 10µF ceramic capacitor for the most application. X7R type ceramic capacitors are recommended. Enable and External Programmable Input UVLO Enable interface pin EN has accurate ON/OFF threshold of 1.29V and 1.19V respectively. An external resistor divider connected from IN to GND can set the VIN under-voltage lockout threshold for load switch operation. EN controls both the ON/OFF state of the internal MOSFET and the external blocking FET. Set EN voltage above ON threshold to enable the internal MOSFET and charge up the gate voltage BFET of external FET. Pull EN below OFF threshold to turn off the internal MOSFET and pull down the gate of the external FET, and Output V OUT will be discharged to GND through the internal120Ω discharging resistor. Soft Start Connect a program capacitor from this pin to GND to control the slew rate of the output voltage at power-on. This pin can be left floating to obtain a predetermined slew rate (minimum T SS) on the output. The soft start time with different capacitor is below: Where, TSS_INT is the internally default soft-start time (typical 1.7ms) without an external C SS, and IINT is the internal current source, about 3.6µA. Output Clamp voltage LS12052BD33 Output clamp voltage is clamped to 14.4V during the input over-voltage fault event. Input Current Limit For current limited adaptor or sources, user can program the input current limit level to prevent the load current overload the source. When the input current limit loop is engaged, input current will be automatically reduced to the programmed level to satisfy the limited input power. Input current limit can be programmed with below equation: Where RLIM is the program resistor at the I LIM pin. /uni23A9 TSS = /uni23A8 /uni23A7 CSS IINT TSSINT ,N o external CSS ,T SS >T SSINT SS cap (nF) None 10 55 100 Rise time (msec) 1. 7 2.4 14 29 Part Number VIN Clamping Threshold Min Typ Max LS12052BD33 12V >15V 13.8V 14.4V 15.0V 10 .5A ∗ k/uni03A9 RILIM IINLIM = Current Limit IINLIM(A) 1 2 2.5 3 3.5 4 4.5 5

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control For the stable system operation, recommend to set the current limit level 1.2~1.5 times of the maximum system load current to avoid mis- triggering the current limit and causing system malfunctions. When power dissipation in the internal MOSFET P D = (V IN – VOUT) × IOUT is too high, LS12052BD33 engages thermal foldback and reduce the current limit value so that the device junction temperature TJ maintains around +105°C. In the event device temperature (T J) exceeds TSHDN, typically 140°C, the thermal shutdown circuitry shuts down the internal MOSFET thereby disconnecting the load from the supply. TJ IINLIM Thermal Foldback in Current Limit PCB Layout Guideline ■ For all applications, a 10µF or greater ceramic decoupling capacitor is recommended between IN terminal and GND, and a 10µF or greater ceramic decoupling capacitor is recommended between OUT terminal. ■ The optimum placement of decoupling capacitor is closest to the IN and GND terminals of the device. Care must be taken to minimize the loop area formed by the bypass-capacitor connection, the IN terminal, and the GND terminal of the IC. ■ High current path should be as short as possible. ■ The GND terminal must be tied to the PCB ground plane at the terminal of the IC. The PCB ground should be a copper plane or island on the board. ■ Locate all support components: RILIM, CSS and resistors for EN, close to their connection pin. Connect the other end of the component to the GND pin of the device with shortest trace length. The trace routing for the RILIM and CSS components to the device should be as short as possible to reduce parasitic effects on the current limit and soft start timing. External Blocking MOSFET Gate Control BFET The BFET pin is provided to drive an external blocking N type MOSFET which can be connected “Back to Back” with the LS12052BD33 output to prevent current flow from load to source in shutdown and in the event of power failure at V IN. When VIN exceeds the under- voltage-lockout threshold and the V EN is above ON threshold, the device turns on the external NFET first. Once the NFET is fully turned on, LS12052BD33 turns on the internal MOSFET and brings up the output with the programmed soft-start ramp rate. When EN pin is pulled low level, both the internal MOSFET and the external blocking NFET are turned off simultaneously. IN IN EN BFET OUT OUT ILIM SS GND VIN 10µF CIN1 12052BD33 VOUT(3A) 10µF CO1 RLIM CSS 10nF IN OUT (Current Limit=3.5A) 25m/uni03A9 101 (2.4mS) CIN2 0.1µF 0.1µF CO2 NFET CEN 0.1µF REN 10K Application Circuit with an External Reverse Blocking FET Current Limit Thermal Fold-back

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Qty Ref Value Description Package

1 CIN1 10µF Ceramic Capacitor, 10V , X5R 0805

1 CO1 10µF Ceramic Capacitor, 10V , X5R 0805

3 CIN2, CO2, Cen 0.1µF Ceramic Capacitor, 10V , X5R 0603

1 Ren 10KΩ Resistor, ±1% 0603

1 CSS 10nF Ceramic Capacitor, 10V , X5R 0603

1 RILIM 3KΩ Resistor, ±1% 0603

1 NFET MSG040N03G RDSON (MAX.) =6mΩ DFN 3x3_8L

1 U1 LS12052BD33 Load Switch IC DFN3x3_10L

TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Average ramp up rate (Tsmin toTP) 1~2°C/second, 3°C/ second max. Preheat & Soak - T emperature Min (Ts(min)) 150°C - T emperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 120 secs Time maintained above - T emperature(TL) 217°C - Time(tL) 60~150 seconds Peak T emperature (TP) See Classification Temp intable1 Time within 5°C of actual peak T emperature (tp) 30 seconds max Ramp-down Rate 6°C/second max Time 25°C to peak T emperature (TP) 8 minutes Max. Soldering Parameters Note 1: Tolerance for peak profile Temperature(TP) is defined as a supplier minimum and a user maximum. Note 2:Tolerance for time at peak profile temperature (tP)is defined as a supplier minimum and a user maximum. Table 1. Pb-freeProcess –Classification surface..Part Number Marking Package Min. Order Qty.

Ordering Information

Y: Year Code WW: Weekly Code A: Assembly Code B: Lot code 12 05 2 B Current 05:5A 2: Version B:BFET Operation Voltage 12:12V Littelfuse LS D33 Package Type DFN3x3_10 Part Numbering Part Marking

© 2022 Littelfuse, Inc. Specifications are subject to change without notice. Revised: FW.12/01/22 LS12052BD33 18V, 5A eFuse with Over-Voltage Protection and Blocking FET Control Dimension Millimeters Inches Min Max Min Max A 0.70 0.80 0.028 0.031 A1 0.00 0.05 0.000 0.002 b 0.18 0.30 0.007 0.012 D 2.90 3.10 0.114 0.122 D1 2.10 2.60 0.083 0.102 E 2.90 3.10 0.114 0.122 E1 1 .35 1 .75 0.053 0.069 e 0.50 0.020 L 0.30 0.50 0.012 0.020 Dimensions — DFN3x3_10L Detail A Thermal Pad Option Detail A A B C D Feedingd irection Symbol Millimeters A 4.0 B 1. 5 C 12.0 D 8.0 E 13 inch F 13.0 Carrier Tape & Reel Specification — DFN3x3_10L Product Disclaimer - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life- saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities. https://www.littelfuse.com/legal/disclaimers/product-disclaimer.aspx