LPT100 SIEMENS | Alldatasheet

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SIEMENS AKTIENGESELLSCHAF 47E D) Mm 6235605 0027513 2 MESIEG LPTI00/A/B LPTHO/AB 200 Dia 209 » Lens: 1 | 03 J fj 105 TYP 708 a f aot wot sae EL 88 ora +003 O14 ~ £00314 100 Jee 050 050 LPT100/A/B and LPT110/A/B | Notes BASE | {Al leads electrically isolated from case ewsrteR 2 Fitness vation of op of cup 2015 LPT100 3, Photosensive area isa 030 diamter ele ‘ita the cenerf ne package, FEATURES ey, «! COLLECTOR * Collector Dark Current 0.25 nA Typ. ceo FLAT * Responsivity 0.6 pA/mW/cm? Min (Tungsten) Characteristics (T,,,,=25°C) 1.8 pA/mW/em? Min (GaAs) ta. Typ. Hex. * Photo Current Collector Dark Current ® 0.2 mA Min (Tungsten) (Veg=10 V) eso 0.25 25 mA 0.6 mA Min (GaAs) Collector Dark Current ® (65°C) (Vag 10 V) lego 0025 «0S yA * Rise and Fall Time 2.8 us Typ Collector DS%k Current * Applications (Mee=5 OV) leew 20 100 nA Position Detector, Intrusion Alarm Responsivty (Tungsten) +9 Sensor, Optical Tachometer Meg=10 V) Rea pAimWiem? LPTIOOAB 06 16 Maximum Ratings ke Jroneaty (ahs Jeo 06 10 Maximum Temperature/Humidity “Meio ¥ a IWiem* Operating Junction Temperature... -85°C to «85°C UPTON ie Se Relative Humidity at Temperature. . 08% at +65°C 5 ! Photocurrent (Tungsten) Maximum Power Dissipation Moab OV HeSOnWiom) | mA Total Dissipation at +25°C iSto em leew 02 14 CaseTomperature 200 mW teri oo M4 Total Dissipation at +26°C LPTIOoA to O 30 Ambient Temperature se 100 mW terion és 72 te s Maximum Voltages LPT1008 13 20 26 F . wom LET 1008 06 42 notes LETHON 06 27

1 These ate steady slate tents The factory should be consulted Light Current Rise Time ® eh 28 is

91 applications volving pulsed or low duty cycle operations Collector to Emitter

2 These ratings gve @maxenum junction temperatura ol +€5°C ‘Saturation Voltage

1d yunction lo case thermal resstance of +300°C/W (deral ° factor of 333 WFC) and a uncion oambwathertal Ulex600 A, H=20 mWICm) —Vergan 016 04 resistance of +800°CIW (derating factor ol 1 87 miW/"C) Collector to Base Breakdown ®

3 Measured wih radation flue nlersty ol less than 01 pom Voltage (|,= 100 wA) 60 120 v

4 Messutod a noed nedance as emit om a tungsten Collector to Ematior

Wament lamp at a color temperature of 2854* K Sustaining Voltage (!,=10MA) LV eq ~ 50 v § No slectncal connection to emer lead Emitter to Collector ® 6. Measured with aturgsten lamp (2654° K) with a 950 rm titer Breakdown (|;,=100 A) By, 70 v 7'No electncal connaction lo base laad ec co

8 Rise te ws detined as the tne raqured for lg 10 nse from 10%

10.90% peak value Fall me's detined as the tme required for leg 0 decrease trom 803% to 10% of peak value Test conditions, 818 legnd OMA, Veen5 0, R,=100 OFens, GaAs Source, 9-21

SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027514 4 MBSIEG TYPICAL OPTOELECTRONIC CHARACTERISTICS FY “G, 0 COLLECTOR RISE AND FALL TIME DARK CURRENT SPECTRAL VS COLLECTOR VS TEMPERATURE CHARACTERISTICS CURRENT Fa RESERDELDZ a1 » 2H AHH RUIN er a Peco Nc 3. HON BT gel > IEW ey [ Sco 2 OCT manned 2 8 Coo a NIN Sots 5 SOA = Tol ‘a TAT #2 Oooo ze Nos] Priori} * SBR gece ini am ¢ ETT TTT KT] ° UT | Air} po ww wm mae Tes WO) 1m 1300 eo TEMPERATURE (°C) WAVELENGTH — d (am) COLLECTOR CURRENT ~ Ic (mA) . ANGULAR RESPONSE ‘ANGULAR RESPONSE TIMES FOR CURRENT TIMES FOR CURRENT adie » Ee : * ‘ PAT LIAS ToT 2 {| PERERA by} gel ENG of Th ee eet E a fo Ne SCT) fe ea Woo ao 2 INET il EC) eee ieee OT OPES TE (cco ° 10203 4 6 6 ° 1 23 4 5 6 Le yD OOO oo 7 * Ice Versus Voc (LPT110 A/B) Ice versus Voc (LPT110) ice versus IRRADIANCE wf Ae i oe 7 | = eto [nee w/a | He ae —— ae | feo ceusronvesoctasta ATs lee vorsus Vee (LPT100 A/B) lee versus Vec (LPTI00) ae CRRADIANCE “To _ “CO eee . rg ° HHH “CDC err TT) Pa = " oer AEE rt v4 fr em C] i. LL . Ceo (Anse I = EA ;y aeuennen iLL eee (FSS rae Zane pore Tactician wee manta APOC rere oo sneer Taucctmectotes LPTIOWAB, LPT110/A/B- 9-22