LPN1010C LANDP | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
Low RDS(on)&FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery
Applications
Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors Schematic and Package Information Schematic Diagram Pin Assignment Top View
Ordering Information
Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Product Information Product Package Pb Free RoHS Halogen Free LPN1010C TO220 yes yes yes
Enhancement Mode N -Channel Power MOSFET LPN1010C_EN_DS_Rev.1.0 www.chip-hope.com SHENZHEN Chip Hope Micro-electronics L TD Confidential– Customer Use Only Absolute Maximum Rating at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V Continuous drain current1） ID 70 A Pulsed drain current2） ID,puse 210 A Power dissipation3） PD 330 W Single pulsed avalanche energy5） EAS 100 mJ Operation and storage temperature Tstg，Tj -55 to 150 ℃ Thermal Characteristics Parameter Symbol Value Unit Thermal resistance，junction-case RθJC 0.38 ℃/W Thermal resistance，junction-ambient4） RθJA 62.5 ℃/W Electrical Characteristics at Tj=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BVDSS 100 V VGS=0V，ID=250uA Gate threshold voltage VGS(th) 1.0 2.5 V VDS= VGS，ID=250uA Drain-source on-state resistance RDS(ON) 10.0 mΩ VGS=10V，ID=10A Drain-source on-state resistance RDS(ON) 14.0 mΩ VGS=4.5V，ID=10A Gate-source leakage current IGSS 100 nA VGS=20V -100 VGS=-20V Drain-source leakage current IDSS 1 uA VDS=100V，VGS=0V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance Ciss 3888.5 pF VGS=0V， VDS=100V， f=1MHz Output capacitance Coss 273.7 pF Reverse transfer capacitance Crss 5 pF Turn-on delay time Td(on) 49.6 nS VGS=10V， VDS=50V， RG=25Ω， ID=12A Rise time tr 52.5 nS Turn-off delay time Td(off) 390 nS Fall time tf 55.2 nS Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Qg 72 nC ID=12A， VDS=50V， VGS=10V Gate-source charge Qgs 8.9 nC Gate-drain charge Qgd 18.8 nC Gate plateau voltage Vplateau 3.2 V
Enhancement Mode N -Channel Power MOSFET LPN1010C_EN_DS_Rev.1.0 www.chip-hope.com SHENZHEN Chip Hope Micro-electronics L TD Confidential– Customer Use Only Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current IS 70 A VGS<Vth Pulsed source current ISP 210 A Diode forward voltage VSD 1.3 V IS=20A，VGS=0V Reverse recovery time trr 66.8 nS IS=12A， di/dt=100A/uS Reverse recovery charge Qrr 139 nC Peak reverse recovery current Irrm 3.5 A Note 1） Calculated continuous current based on maximum allowable junction temperature. 2） Repetitive rating；pulse width limited by max. junction temperature. 3） Pd is based on max. junction temperature，using junction-case thermal resistance. 4） The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper，in a still air environment with Ta=25℃. 5） VDD=50V，RG=25Ω，L=0.3mH，starting Tj=25℃
Enhancement Mode N -Channel Power MOSFET LPN1010C_EN_DS_Rev.1.0 www.chip-hope.com SHENZHEN Chip Hope Micro-electronics L TD Confidential– Customer Use Only