LPM670-FJ

LSM670 SIEMENS | Alldatasheet

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l color of package: white l for use as optical indicator l for backlighting, optical coupling into light pipes and lenses l suitable for all SMT assembly and soldering methods l available taped on reel (8 mm tape) l load dump resistant acc. to DIN 40839 Mini TOPLED ® LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 2 1998-11-12 Streuung der Lichtstärke in einer VerpackungseinheitIV max /IV min £ 2.0. Luminous intensity ratio in one packaging unitIV max /IV min £ 2.0. Typ Type Emissions- farbe Color of Emission Farbe der Lichtaustritts- fläche Color of the Light Emitting Area Lichtstärke Luminous Intensity IF = 10 mA IV (mcd) Lichtstrom Luminous Flux IF = 10 mA F V (mlm) Bestellnummer Ordering Code LS M670-HK LS M670-J LS M670-K LS M670-JM super-red colorless clear 2.5 … 12.5 4.0 … 8.0 6.3 … 12.5 4.0 … 32.0 18 (typ.) 30 (typ.) Q62703-Q3380 Q62703-Q3381 Q62703-Q3382 Q62703-Q3383 LO M670-HK LO M670-J LO M670-K LO M670-JM orange colorless clear 2.5 … 12.5 4.0 … 8.0 6.3 … 12.5 4.0 … 32.0 18 (typ.) 30 (typ.) Q62703-Q3384 Q62703-Q3385 Q62703-Q3386 Q62703-Q3387 LY M670-HK LY M670-J LY M670-K LY M670-JM yellow colorless clear 2.5 … 12.5 4.0 … 8.0 6.3 … 12.5 4.0 … 32.0 18 (typ.) 30 (typ.) Q62703-Q3388 Q62703-Q3389 Q62703-Q3390 Q62703-Q3391 LG M670-HK LG M670-J LG M670-K LG M670-JM green colorless clear 2.5 … 12.5 4.0 … 8.0 6.3 … 12.5 4.0 … 32.0 18 (typ.) 30 (typ.) Q62703-Q3392 Q62703-Q3393 Q62703-Q3394 Q62703-Q3395 LP M670-FJ LP M670-G LP M670-H LP M670-GK pure green colorless clear 1.0 … 8.0 1.6 … 3.2 2.5 … 5.0 1.6 … 12.5 8 (typ.) 12 (typ.) Q62703-Q3396 Q62703-Q3397 Q62703-Q3398 Q62703-Q3399 LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 3 1998-11-12 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 30 mA Stoßstrom Surge current t£ 10 ms,D = 0.005 IFM 0.5 A Sperrspanung Reverse voltage VR 5V Verlustleistung Power dissipation Ptot 80 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board* ) (Padgröße ‡16 mm 2) mounted on PC board*) (pad size ‡ 16 mm2) Rth JA 4801) K/W *) PC-board: FR4 1) vorläufig/preliminary LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 4 1998-11-12 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LO LY LG LP Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 10 mA lpeak 635 610 586 565 557 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 10 mA ldom 628 605 590 570 560 nm Spektrale Bandbreite bei 50 %Irel max (typ.) Spectral bandwidth at 50 %Irel max (typ.) IF = 10 mA Dl 45 40 45 25 22 nm Abstrahlwinkel bei 50 %Iv (Vollwinkel) Viewing angle at 50 %Iv 2j 120 120 120 120 120 Grad deg. Durchlaßspannung (typ.) Forward voltage (max.) IF = 10 mA VF VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 5 V IR IR 0.01 0.01 0.01 0.01 0.01 mA mA Kapazität (typ.) Capacitance VR = 0 V, f = 1 MHz C 0 1 28 1 01 51 5p F Schaltzeiten: Switching times: IV from 10 % to 90 % (typ.) IV from 90 % to 10 % (typ.) IF = 100 mA, tp = 10ms, RL = 50W tr tf 300 150 300 150 300 150 450 200 450 200 ns ns LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 5 1998-11-12 Relative spektrale EmissionIrel =f (l),TA = 25 ˚C,IF = 10 mA Relative spectral emission V(l) = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel =f (j) Radiation characteristic rel l OHL01698 V l 100 400 450 500 550 600 650 700 nm I pure-greengreen yellow orange super-red red hyper-redblue 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 6 1998-11-12 Durchlaßstrom IF =f (VF) Forward current TA = 25 ˚C Zulässige ImpulsbelastbarkeitIF =f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C Relative LichtstärkeIV/IV(10 mA) =f (IF) Relative luminous intensity TA = 25 ˚C Maximal zulässiger Durchlaßstrom Max. permissible forward current IF =f (TA) 10 -1 V pure-green super-red orange/yellow green OHL02145 IF FV 010 110 210 mA OHL01686 s10-5 10-4 10-3 10-2 10-1 100 101 t D I T T P F tP= D = 0.005 0.01 0.02 0.05 0.2 0.5 DC 10 1 IF t 210 0.1 p 10 3 mA V V (10 mA) 10 -1 0 10 10 12 10mA red yellow green super-red orange pure-green 10 -3 OHL02146 FI -210 -110 010 110 I I T OHL00231 A FI 0 20 40 60 80 C 100 mA LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 7 1998-11-12 Wellenlänge der Strahlunglpeak = f (TA) Wavelength at peak emission IF = 10 mA Durchlaßspannung VF =f (TA) Forward voltage IF = 10 mA Dominantwellenlänge ldom = f (TA) Dominant wavelength IF = 10 mA Relative LichtstärkeIV /IV(25 ˚C ) =f (TA) Relative luminous intensity IF = 10 mA green yellow orange super-red pure-green 550 OHL02104 l peak AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 green super-red orange yellow pure-green 1.4 OHL02106 VF AT 0 20 40 60 80 100 1.6 1.8 2.0 2.2 V 2.4 yellow green orange super-red pure-green 550 OHL02105 l dom AT 0 20 40 60 80 100 570 590 610 630 650 nm 690 yellow green orange super-red pure-green 0.0 OHL02150 AT 0 20 40 60 80 100 V VI I 0.4 0.8 1.2 1.6 2.0 (25 ˚C) LS M670, LO M670, LY M670 LG M670, LP M670

Semiconductor Group 8 1998-11-12 LS M670, LO M670, LY M670 LG M670, LP M670 Maßzeichnung (Maße in mm, wenn nicht anders angegeben) Package Outlines (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschrägte Ecke Cathode mark: bevelled edge GPL06928 0.8 1.0 0.05 0.15 1.4 1.2 1.9 2.1 2.1 2.3 1.3 1.5 Cathode marking typ. 1.5 x 1.0 0.5 0.3 Cathode marking