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  1. FEATURES ƽ Low RDS(on) trench technology. ƽ Low thermal impedance. ƽ Fast switching speed. ƽ 2. APPLICATION ƽ Load Switches ƽ DC/DC Conversion ƽ Motor Drives 3. ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) 2.Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS A Continuous Drain Current(Note 5) Power Dissipation(Note 5) Operating Junction Temperature TJ ía Tstg ía Unit 'UDLQíWRí6RXUFH9ROWDJH VDSS -30 V *DWHíWRí6RXUFH9ROWDJH VGS ± 25 V Parameter Symbol Limits LP B8337DT0AG P-Channel 30-V (D-S) MOSFET Marking Shipping A37 2000/Tape&Reel We declare that the material of product are Halogen Free and compliance with RoHS requirements. Device LPB8337DT0AG TA =25° C TA =70° C ID TA =25° C TA =70° C PD W Storage Temperature Range Pulsed Drain Current (Note 2) IDM ºC Leshan Radio Company, LTD. Rev.E Jul. 2020 valanche Current IAS A valanche energy L=0.1mH EAS 61.25 mJ ESD protected ƽ DFN3333-8A 1.Surface−mounted on FR4 board using the minimum recommended pad size. 0.78 0.5 -40 Parameter Symbol Value Unit Junction−to−Case (Note 1) R /C0113 JC C/W Junction−to−Ambient – Steady State (Note 1) R /C0113 JA 160 Junction−to−Ambient – Steady State (Note 5) R /C0113 JA Junction−to−Ambient – (t 10 s) (Note 5) R /C0113 JA

P-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS Gate-Source Threshold Voltage (VDS = VGS , ID = -250 uA) Gate-Body Leakage (VDS = 0 V, VGS = ±25 V) Zero Gate Voltage Drain Current (VDS = -24 V, VGS = 0 V) (VDS = -24 V, VGS = 0 V, TJ = 55°C) Drain-Source On-Resistance(Note 3) (VGS = -10 V, ID = -13.6 A) (VGS = -4.5 V, ID = -10.9 A) Diode Forward Voltage(Note 3) (IS = -2.3 A, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3.Pulse test: PW İ 300µ s duty cycle İ 2%. 4.Guaranteed by design, not subject to production testing. (VDS = -15 V, VGS = 0 V, f = 1 MHz) Ciss pF Coss Crss (VDS=-15 V, 5/ ȍ,'

13.6 A,VGEN=-10

95*(1 ȍ td(on) ns tr td(off) tf Dynamic(Note 4) (VDS = -15 V, VGS = -4.5 V,ID = -13.6 A) Qg Qgs Qgd Characteristic Symbol Unit Static IDSS µA VGS(th) V -1.3 IGSS VSD V -0.76 -1.2 7.5 10.5 RDS(on) Pȍ ±10 Min. Typ. -25 nC Max. Leshan Radio Company, LTD. µA V Drain-Source Breakdown Voltage V(BR)DSS (VGS=0 , ID = -250 uA) -30 Continuous Current(Note 5) IS A Plused Current(Note 5) ISM A Reverse Recovery Time (IF=IS,dIf/dt=100A/us) trr ns Qrr nC Reverse Recovery Charge (IF=IS,dIf/dt=100A/us) Source-Drain DIODE Ratings and Characteristics(Tc= 25°C) -25 -100 LP B8337DT0AG Gate Resistance Rg (VDS=0V ,VGS=0V, f=1.0MHz) 2.5 5.2 113.8 120.9 4555 442 441 26.22 3.48 13.26 5.Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. Rev.E Jul. 2020

7.ELECTRICAL CHARACTERISTICS CURVES 0.01 0.1 100 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 ȭ ȭ ȭ 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 5'6 RQ ȍ ID(A) VGS=3.0V VGS=3.5V VGS=4.0V VGS=4.5V,5V,5.5V,6V,8V,10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID(A) VGS(V) VDS=10V 150 ȭ ȭ ȭ ID(A) VDS(V) VGS=2.8V,3V,3.5V,4V,4.5V,6V,8V,10V VGS=2.0V VGS=2.2V VGS=2.4V VGS=2.6V IS vs. VSD ID vs. VDS ID vs. VGS RDS(on) vs. ID P-Channel 30-V (D-S) MOSFET Leshan Radio Company, LTD. LP B8337DT0AG Rev.E Jul. 2020

7.ELECTRICAL CHARACTERISTICS CURVES(Con.) VGS(V) Qg(nC) VDS=15V,ID=13.6A Ta=25 ȭ 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 100 125 150 VGSth(V) Tj( ȭ ID=250uA 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 -50 -25 100 125 150 5'6 RQ ȍ Tj( ȭ VGS=4.5V,ID=10.9A VGS=10V,ID=13.6A 0.000 0.005 0.010 0.015 0.020 0.025 0.030 5'6 RQ ȍ VGS(V) ID=13.6A 150 ȭ ȭ ȭ VGSTH vs. Tj RDS(on) vs. VGS RDS(on) vs. Tj VGS vs. Qg P-Channel 30-V (D-S) MOSFET Leshan Radio Company, LTD. LP B8337DT0AG Rev.E Jul. 2020

7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1000 2000 3000 4000 5000 6000 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 ȭ Ciss Coss Crss Capacitance P-Channel 30-V (D-S) MOSFET Leshan Radio Company, LTD. 0.01 0.1 100 0.1 100 ID(A) VDS(V) DC result 10ms 1ms 100us 10us 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E+03 Notmalized Effective Transient Thermal Impedance Pulse time (s) FR4 Board Duty Cycle=50% 25% 10% 0.1% Single Pulse Thermal Response Safe Operating Area LP B8337DT0AG Rev.E Jul. 2020 1.Duty Cycle, D = t / t P(pk) t t θ JA = 145 C /W 2.R 3.T -T =P* R J A JA θ (t) R JA θ (t)=r(t)* R JA θ

P-Channel 30-V (D-S) MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. ')1$ ',0 0,1 125 0$; E H %6& $ 5() $OO'LPHQVLRQVLQPP ')1$ ',0 PP LP B8337DT0AG Rev.E Jul. 2020