LPB3443LT1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • VDS = -20V
  • RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ
  • RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • ESD rating of class 0 (<100V)per Human Body Model 2. APPLICATIONS
  • Advanced trench process technology
  • High density cell design for ultra low on-resistance. 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed (Note 1) 5. THERMAL CHARACTERISTICS Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in² 2oz Cu PCB board. Device Gate–to–Source Voltage – Continuous VGS ± 12 LPB 3443LT1G S-LPB 3443LT1G 20V P-Channel Enhancement-Mode MOSFET -20 Unit Drain–Source Voltage VDSS Marking Shipping LPB3443LT1G P34 3000/Tape&Reel Drain Current V V A Unit 1.1 ID -4.7 IDM -20 LPB3443LT3G P34 10000/Tape&Reel Parameter Symbol Limits Parameter Symbol Limits WPD −55∼+150TJ,Tstg RΘJA 110 º C/W ºC SOT23LC Leshan Radio Company, LTD. Rev.B Nov 2018 1/5

20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = -20 Vdc) Gate–Body Leakage Current, Forward (VGS = 12 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 12 Vdc) ON CHARACTERISTICS (Note 3) Forward Transconductance (VDS = -10Vdc, ID = -4.7Adc) Gate Threshold Voltage (VDS = VGS, ID = -250μAdc) Static Drain–Source On–State Resistance (VGS = -4.5Vdc, ID = -4.7Adc) (VGS = -2.7Vdc, ID = -3.8Adc) (VGS = -2.5Vdc, ID = -1.0Adc) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage (VGS = 0 Vdc, ISD = -1.7 Adc) 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. ns 8 - Symbol Min. -100 -20 - - μAdc nAdc nAdc S RDS(on) -0.6 110 -0.85 VSD - - (VDD = -10V, RD=10Ω ID = -1A, VGS = -4.5V, RG = 6Ω) - 45 70 - 25 40 - 22 35 mΩ - 35 55 tf Typ. Max. IGSSR IGSSF - - 100 VBRDSS -1.4 -1.2 V Unit Vdc td(on) tr 58 70 VGS(th) IDSS - - -1 Vdc td(off) - 63 90 gfs Leshan Radio Company, LTD. 2/5 LPB 3443LT1G, S-LPB 3443LT1G Rev.B Nov 2018

20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 3/5 LPB 3443LT1G, S-LPB 3443LT1G 0.02 0.03 0.04 0.05 0.06 0.07 0.08 1 2 3 4 5 6 ID,Drain Current(A) VGS=-2.5V VGS=-4.5V VGS=-2.7V 0.005 0.05 0.5 IS Diode Forward Current(A) VSD Diode Forward Voltage(V) 150℃ -55℃25℃ 0 0.5 1 1.5 2 ID Drain Current(A) VGS,Gate To Source Voltage(V) VDS=-6.0V 150℃ -55℃ 25℃ 0 1 2 3 4 5 ID Drain(A) VDS,Drain to Source Voltage(V) Ta=25℃ VGS=-1.4V VGS=-1.5V VGS=-1.6V VGS=-1.7V VGS=-1.8V VGS=-1.9V,-2V,-3V,-4V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID RDS(on) On Resistance(Ω) Rev.B Nov 2018

20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) LPB 3443LT1G, S-LPB 3443LT1G Leshan Radio Company, LTD. 4/5 ELECTRICAL CHARACTERISTICS CURVES(Con.) 200 400 600 800 1000 1200 1400 0 5 10 15 20 VDS Drain to Source Voltage(V) f=1.0MHz Ta=25℃ Ciss Coss,Crss 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -50 -25 0 25 50 75 100 125 150 VGSTH Threshold Voltage(V) Tj Temperature(℃) ID=-250uA 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 -50 -25 0 25 50 75 100 125 150 Tj,Temperature(℃) VGS=-2.7V,ID=-3.8A VGS=-4.5V,ID=-4.7A 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 0 2 4 6 8 10 RDS(on) On Resistance (Ω) VGS,Gate To Source Voltage(V) ID=-4.70A 150℃ -55℃ 25℃ RDS(on) vs. VGS RDS(on) vs. Tj VGSTH vs. Tj Capacitance RDS(on) On Resistance (Ω)Capacitance(pF) Rev.B Nov 2018

20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. 5/5 DIM MIN NOR MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.50 1.60 1.70 e 1.80 1.90 2.00 L 0.20 0.40 0.60 L1 0.45 0.60 0.75 H E 2.60 2.80 3.00 θ 0º – 10º All Dimensions in mm SOT23-LC SOT23-LC GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um H E L Ɵ c e A R0.15 D b E A X Y C B DIM (mm) X 0.80 Y 0.90 A 2.40 B 0.95 C 0.95 SOT23-LC LPB 3443LT1G, S-LPB 3443LT1G Rev.B Nov 2018