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  1. FEATURES VDS = -30V RDS(ON) < 70mOhm @VGS=-10V,ID=-4.1A RDS(ON) < 100mOhm @VGS=-4.5V,ID=-3A We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS Advanced trench technology This device is suitable for use as a load switch or in PWM applications. 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) Junction and Storage Temperature Range 5. THERMAL CHARACTERISTICS Maximum Junction-to-Ambient(Note 1) Maximum Junction-to-Ambient(Note 1) Maximum Junction-to-Lead 1.The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3.The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. 125 Unit 0.9 TJ,TSTG -55~+150 Symbol Limits 1.4 -4.1 -3.5 -25 Symbol Max Typ. t 10s Parameter Device VGS ± 20 LPB3407LT1G S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET -30 Unit VDS Marking Shipping LPB3407LT1G A07 3000/Tape&Reel V V RθJL A IDM TA =25° C TA =70° C PD Power Dissipation(Note 2) W LPB3407LT3G A07 10000/Tape&Reel Parameter Drain–Source Voltage Gate-Source Voltage Pulsed Drain Current(Note 3) Continuous Drain Current TA =25° C TA =70° C ID 100 Steady-State Steady-State RθJA Leshan Radio Company, LTD. Rev.E Jul. 2020

LPB3407LT1G, S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -24 V) (VGS = 0, VDS = -24 V,TJ =55° C) Gate–Body Leakage Current (VDS =0V, VGS = ± 20V) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS =-10V, ID =-4.1A) (VGS =-10V, ID =-4.1A,TJ =125° C) (VGS =-4.5V, ID =-3A) Diode Forward Voltage (IS =-1A,VGS =0V) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance (VGS =0V, VDS =0V, f=1MHz) Total Gate Charge(Vgs=10V) Total Gate Chargeg(Vgs=4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time (IF =-4A, dI/dt=100A/µ s) Body Diode Reverse Recovery Charge (IF =-4A, dI/dt=100A/µ s) V trr Qrr 7.2 7.5 5.3 6.4 5.5 VGS(th) IDSS m Ω V Typ. Max. IGSS ± 100 VBRDSS Unit V Min. -30 100 -0.7 1.2 3.6 RDS(on) Symbol Static Dynamic VSD μA nA (VGS =0V, VDS =-15V, f=1MHz) Ciss Coss Crss Rg 670 pF Ω (VDS =-15V, ID =-4A) (VGS =-10V, VDS =-15V, RL =3.6Ohm,RGEN =3Ohm) Qg Qg Qgs td(on) tr td(off) tf Qgd nC ns ns nC 8.8 Leshan Radio Company, LTD. Rev.E Jul. 2020

LPB3407LT1G, S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 0.01 0.02 0.03 0.04 0.05 0.06 RDS(on) (Ω) ID(A) VGS=4.5V VGS=10V 0.001 0.01 0.1 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=2.2V VGS=2.3V VGS=2.4V VGS=2.5V VGS=2.6V VGS=2.7V VGS=2.8V VGS=3V,10V ID vs. VDS ID vs. VGS IS vs. VSD RDSON vs. ID Rev.E Jul. 2020

LPB3407LT1G, S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. 200 400 600 800 1000 1200 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Ciss Coss Crss 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=4.5V,ID=3.0A VGS=10V,ID=4.1A 0.00 0.05 0.10 0.15 0.20 RDS(on) (Ω) VGS(V) ID=4.1A 150 RDSON vs. VGS RDSON vs. TJ VGSTH vs. TJ Capacitance Rev.E Jul. 2020

LPB3407LT1G, S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. 0.001 0.01 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 100 1000 Notmalized Effective Transient Thermal Impedance Pulse time (s) Duty Cycle=50% 25% 10% 0.1% Single Pulse 0.01 0.1 100 0.1 100 ID(A) VDS(V) PCB Size 30.0mm 25.0mm 1.6mm(FR4); DC result 1µ s 10µ s 100ms 10ms 1ms 100µ s Thermal Response Safe Operating Area FR4 Board 1.Duty Cycle, D = t / t P(pk) t t θ JA = 125 C /W 2.R 3.T -T =P* R J A JA θ (t) R JA θ (t)=r(t)* R JA θ Rev.E Jul. 2020

LPB3407LT1G, S-LPB3407LT1G 30V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS 1.Top package surface finish Ra0.4± 0.2um 2.Bottom package surface finish Ra0.7± 0.2um 3.Side package surface finish Ra0.4± 0.2um 9.SOLDERING FOOTPRINT GENERAL NOTES 0.60REF All Dimensions in mm SOT23LC DIM MIN NOR MAX A 0.90 1.00 1.10 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.17 0.20 D 2.80 2.90 3.00 E 1.50 1.60 1.70 e 1.80 1.90 2.00 L 0.20 0.40 0.60 H E 2.60 2.80 3.00 θ 10° B 0.95 C 0.95 SOT23LC DIM (mm) X 0.80 Y 0.90 A 2.40 Leshan Radio Company, LTD. Rev.E Jul. 2020