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P-Channel 60-V (D-S) MOSFET Leshan Radio Company, LTD. 3. ORDERING INFORMATION Device Marking Shipping LPB2680LT1G 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) 5. THERMAL CHARACTERISTICS Continuous Drain Current ID IS IDM -20 -1.6 A TA =25° C A Symbol Limits Unit Drain−to−Source Voltage VDSS -60 Gate−to−Source Voltage VGS ±20 Continuous Source Current (Diode Conduction) Pulsed Drain Current (Note 1) V V A Parameter 15P IAS A EAS mJ Avalanche Current (L = 0.1mH) Avalanche energy (L = 0.1mH) SOT23LC Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in² 2oz Cu PCB board. Unit 0.89 Parameter Symbol Limits W PD −55 +150 TJ,Tstg RΘJA 140 º C/W º C 1. FEATURES Low RDS(on) trench technology Low t h ermal im p edance. Fast switc h ing s p eed. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Load Switches DC/DC Conversion Motor Drives LPB2680LT1G Rev.A Nov. 2019 9.8

B 2680LT1G P-Channel 60-V (D-S) MOSFET Leshan Radio Company, LTD. 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Characteristic Zero Gate Voltage Drain Current (VGS = 0, VDS = -48 V) Gate–Body Leakage Current (VDS=0V, VGS = ±20 V) Forward Transconductance (VDS = -15 V, ID = -4 A) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS = -10 V, ID = -4 A) (VGS = -4.5 V, ID = -3.2 A) Diode Forward Voltage (IS = -2.1 A, VGS = 0 V) 3.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%. Unit 120 gfs Symbol Min. μA RDS(on) -1.5 VSD -0.83 V VGS(th) IDSS mΩ V Typ. Max. IGSS ±10 100 4.Guaranteed by design, not subject to production testing. μA On-State Drain Current (VDS = -5 V, VGS = -10 V) ID(on) -7.5 A S Total Gate Charge (VDS = -30 V, VGS = -4.5 V,ID = -4 A) Gate-Source Charge Gate-Drain Charge Input Capacitance (VDS = -15 V, VGS = 0 V, f = 1 MHz) Output Capacitance Reverse Transfer Capacitance Qgs Qg Crss Ciss nC 2.49 nC 8.52 Qgd nC Coss pF 66.6 pF 1106 pF 55.3 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) (VDS= -30V, RL=7.5 Ω, ID = -4 A, VGEN = -10 V, RG = 6 Ω) tf td(on) tr ns (VDS = -30 V, VGS = -4.5 V,ID = -4 A) (VDS = -30 V, VGS = -4.5 V,ID = -4 A) (VDS = -15 V, VGS = 0 V, f = 1 MHz) (VDS = -15 V, VGS = 0 V, f = 1 MHz) Gate resistance (VGS =0V, VDS =0V, f=1MHz) Rg 7.3 Rev.A Nov. 2019 Ω

Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES LP B 2680LT1G 0.06 0.07 0.08 0.09 0.10 0.11 RDS(on) (Ω) ID(A) VGS=10V VGS=3.5V VGS=4.0V VGS=4.5V VGS=8.0V VGS=6.0V VGS=5.0V VGS=5.5V 0.001 0.01 0.1 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=2.0V VGS=2.5V VGS=2.4V VGS=2.3V VGS=2.2V VGS=2.1V VGS=3V,3.5V,4V,4.5V,6V,8V,10V ID vs. VGS IS vs. VSD ID vs. VDS RDS(on) vs. ID Rev.A Nov. 2019

Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) LP B 2680LT1G 200 400 600 800 1000 1200 1400 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Ciss Coss Crss 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=4.5V,ID=3.2A VGS=10V,ID=4A 0.0 0.1 0.2 0.3 0.4 0.5 0.6 RDS(on) (Ω) VGS(V) ID=4.0A 150 RDS(on) vs. VGS RDS(on) vs. Tj VGSth vs. Tj Capacitance Rev.A Nov. 2019

8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET GENERAL NOTES 1.Top package surface finish Ra0.4± 0.2um 2.Bottom package surface finish Ra0.7± 0.2um 3.Side package surface finish Ra0.4± 0.2um B 0.95 C 0.95 SOT23-LC DIM (mm) X 0.80 Y 0.90 A 2.40 0.01 0.06 0.10 b 0.30 0.40 0.50 SOT23-LC DIM MIN NOR MAX A 0.90 1.00 1.10 E 1.50 1.60 1.70 e 1.80 1.90 2.00 c 0.10 0.17 0.20 D 2.80 2.90 3.00 H E 2.60 2.80 3.00 θ 10° L 0.20 0.40 0.60 0.60REF All Dimensions in mm LP B 2680LT1G Rev.A Nov. 2019