LPB2305LT1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • VDS = -30V
  • RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ
  • RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85mΩ
  • RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS
  • Advanced trench process technology
  • High density cell design for ultra low on-resistance. 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed (Note 1) 5. THERMAL CHARACTERISTICS Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in² 2oz Cu PCB board. Device Gate–to–Source Voltage – Continuous VGS ± 14 LPB 2305LT1G S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET -30 Unit Drain–Source Voltage VDSS Marking Shipping LPB2305LT1G P05 3000/Tape&Reel Drain Current V V A Unit 1.4 ID -4.2 IDM -30 LPB2305LT3G P05 10000/Tape&Reel Parameter Symbol Limits Parameter Symbol Limits WPD −55∼+150TJ,Tstg RΘJA 140 º C/W ºC SOT23LC Leshan Radio Company, LTD. Rev.A Nov 2016 1/5

30V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = -24 Vdc) Gate–Body Leakage Current, Forward (VGS = 14 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 14 Vdc) ON CHARACTERISTICS (Note 3) Forward Transconductance (VDS = -5Vdc, ID = -5Adc) Gate Threshold Voltage (VDS = VGS, ID = -250μAdc) Static Drain–Source On–State Resistance (VGS = -10 Vdc, ID = -4.2 Adc) (VGS = -4.5 Vdc, ID = -4 Adc) (VGS = -2.5 Vdc, ID = -1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage (VGS = 0 Vdc, ISD = -1 Adc) 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Unit Vdc td(on) tr td(off) - 64 85 gfs 7.0 11 - Symbol Min. -100 -30 - - μAdc nAdc nAdc Ciss RDS(on) -0.7 130 VSD - - (VDD = -15V, RL= 3.6Ω ID = -1A, VGEN = -10V RG = 6Ω) - 34.88 - - 3.52 - - 11.36 - V VGS(th) IDSS mΩ - - -1 Vdc -1.3 - 2.32 - Typ. Max. IGSSR IGSSF - - 100 VBRDSS S 826.18 - Coss Crss - 90.74 - - 53.18 - ns 53 70 tf pF pF pF Leshan Radio Company, LTD. 2/5 LPB 2305LT1G, S-LPB 2305LT1G Rev.A Nov 2016

30V P-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 RDS(on),Drain-to-Source Resistance(Ω) ID,Drain Current(A) VGS=1.6V VGS=2.6V VGS=2.1V 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 VGS(th)(Normallized) T,temperature(℃) 0 2 4 6 ID,Drain Current(A) VDS,Drain-to-Source Voltage(V) VGS=1.6V VGS=2.6V VGS=2.1V 0 1 2 3 ID,Drain Current(A) VGS,Gate-to-Source Voltage(V) VDS=5V 150℃ 25℃ -55℃ On-Region Characteristics Transfer Characteristics VGS(th) vs. Temperature RDS(on) vs. ID Leshan Radio Company, LTD. 3/5 LPB 2305LT1G, S-LPB 2305LT1G Rev.A Nov 2016

30V P-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES LPB 2305LT1G, S-LPB 2305LT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES LPB 2305LT1G, S-LPB 2305LT1G (Con.) Leshan Radio Company, LTD. 4/5 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Power (W) 0.1 1.0 10.0 100.0 0.1 1 10 100 DS (Volts) D (Amps) 100 µ s 10ms 1ms 0.1s 10s DC R DS(ON) limited T J(Max) =150°C T A =25°C T J(Max) =150°C T A =25°C 10µs Normalized Maximum Transient Thermal Impedance Maximum Forward Biased Safe Operating Area Single Pulse Power Rating Junction-to- Ambient 0.001 0.01 0.1 Zθja Normalized Transient Thermal Resistance Pulse Width (s) Normalized Maximum Transient Thermal Impedance D=T on T J,PK A DM θJA θJA R θJA =90°C/W In descending order T o n T P D Single Pulse Rev.A Nov 2016

30V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. 5/5 DIM MIN NOR MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.50 1.60 1.70 e 1.80 1.90 2.00 L 0.20 0.40 0.60 L1 0.45 0.60 0.75 H E 2.60 2.80 3.00 θ 0º – 10º All Dimensions in mm SOT23-LC SOT23-LC GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um H E L Ɵ c e A R0.15 D b E A X Y C B DIM (mm) X 0.80 Y 0.90 A 2.40 B 0.95 C 0.95 SOT23-LC LPB 2305LT1G, S-LPB 2305LT1G Rev.A Nov 2016