LPA2301LT1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • VDS =-20V
  • RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ
  • RDS(ON),VGS@-4.5V,IDS@-2.8A=100mΩ
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Advanced trench process technology
  • High density cell design for ultra low on-resistance
  • Fully characterized avalanche voltage and current improved shoot-through FOM 2. APPLICATIONS
  • Simple drive requirement
  • Small package outline
  • Surface mount device 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed(Note 1) 5. THERMAL CHARACTERISTICS Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in² 2oz Cu PCB board. º C/W ºC−55∼+150TJ,Tstg RΘJA 140 LPA2301LT1G S-LPA2301LT1G 20V P-Channel Enhancement-Mode MOSFET -20 Unit Drain–Source Voltage VDSS Marking Shipping LPA2301LT1G A01 3000/Tape&Reel Drain Current V LPA2301LT3G A01 V A Unit 0.9 ID -2.3 Device Gate–to–Source Voltage – Continuous VGS ±8 IDM -8 10000/Tape&Reel Parameter Symbol Limits Parameter Symbol Limits WPD SOT23E Leshan Radio Company, LTD. 1/5Rev.B Sep. 2018

LPA2301LT1G, S-LPA2301LT1G 20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = -9.6 Vdc) Gate–Body Leakage Current, Forward (VGS = 8 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 8 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = -250μAdc) Static Drain–Source On–State Resistance (VGS = -4.5 Vdc, ID = -2.8 Adc) (VGS = -2.5 Vdc, ID = -2 Adc) Forward Transconductance (VDS = -5V, ID = -4.0Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) SWITCHING CHARACTERISTICS Rise Time Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage (VGS = 0 Vdc, ISD = -0.75 Adc) 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. ns 36.05 6.19 S - 6.5 - pF pF pF - 882.5 - - 145.5 Typ. Max. IGSSR - - -100 - - 100 150 VBRDSS gfs Ciss Coss Crss 69 100 μAdc nAdc nAdc mΩ - - Unit Vdc -20 - - Symbol Min. Vdc -0.9 IGSSF VSD - -0.8 -1.2 V - 17.28 - 3.73 tf 97.26 RDS(on) -0.4 (VDD = -6V, RL = 6Ω ΙD = −1Α, VGEN = -4.5V RG = 6Ω ) VGS(th) IDSS td(on) tr td(off) - Leshan Radio Company, LTD. 2/5 Turn-Off Delay Time Turn-On Delay Time Rev.B Sep. 2018

LPA2301LT1G, S-LPA2301LT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 100 200 300 400 500 600 700 800 0 5 10 15 20 C,Capacitor(pF) VDS,Drain-to-Source(V) Ciss Coss Crss Capacitor vs. VDS Leshan Radio Company, LTD. 3/5 0.2 0.4 0.6 0.8 1 2 3 4 5 RDSon(Ω) VGS(V) ID=2.80A 150℃ -55℃ 25℃ 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 -50 -25 0 25 50 75 100 125 150 RDS(Ω) Tj(℃) VGS=2.5V,ID=2.0A VGS=4.5V,ID=2.8A 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.5 1 1.5 2 2.5 3 RDSon(Ω) ID(A) VGS=2.5V VGS=4.5V Ta=25℃ RDS(on) vs.Temperature RDS(on) vs. ID RDS(on) vs. VGS Rev.B Sep. 2018

LPA2301LT1G, S-LPA2301LT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 ID, Drain Current (A) VDS, Drain-to-Source Voltage(V) VGS=1.5V VGS=2V VGS=4.5V,4V,3.5V,3V,2.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IS, Source Current (A) VSD, Source-to-Drain Voltage (V) (0.2) (0.1) 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 VGS(th) VARIANCE (V) Tj, TEMPERATURE On-Region Characteristics VGS(th) vs. TJ IS vs. VSD Leshan Radio Company, LTD. 4/5Rev.B Sep. 2018

LPA2301LT1G, S-LPA2301LT1G 20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. 5/5 DIM MIN NOR MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.20 1.30 1.40 e 1.80 1.90 2.00 L 0.20 0.40 0.60 L1 0.45 0.55 0.65 H E 2.20 2.40 2.60 θ 0º – 10º All Dimensions in mm SOT23E SOT23E GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um H E L Ɵ e A R0.15 D b E c A X Y C B DIM (mm) X 0.80 Y 0.90 A 2.00 B 0.95 C 0.95 SOT23E Rev.B Sep. 2018