LP9435LT1G LRC | Alldatasheet

Document overview

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Technical content

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance V DS = -30V R DS(ON) , V gs @-10V, I ds @-5.3A = 70mΩ R DS(ON) , V gs @-4.5V, I ds @-4.2A = 100mΩ Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (T A = 25 o C unless otherwise noted) ParameterSymbol Limit Unit Drain-Source VoltageV DS -30 V Gate-Source VoltageV GS ± 20 Continuous Drain CurrentI D -5.3 A Pulsed Drain Current I DM -20 Maximum Power Dissipation TA = 25 o CP D 1.4 W TA = 75 o C 0.8 Operating Junction and Storage Temperature RangeT J , T stg -55 to 150 o C Junction-to-Case Thermal Resistance R θJC o C/W Junction-to-Ambient Thermal Resistance (PCB mounted) R θJA Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Shipping P94 Marking 3000/Tape&Reel LP9435LT1G P94LP9435LT3G 10000/Tape&Reel

Ordering Information

Rev .O 1/4 LP9435LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LP9435LT1G S-LP9435LT3G

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICS

ParameterSymbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown VoltageBV DSS V GS = 0V, I D -30 = -250uA V Drain-Source On-State ResistanceR DS(on) V GS D mΩ Drain-Source On-State ResistanceR DS(on) V GS D Gate Threshold VoltageV GS(th) V DS GS , I D Zero Gate Voltage Drain CurrentI DSS V DS 1 = -24V, V GS = 0V u A Gate Body LeakageI GSS V GS ±100 = ± 20V, V DS = 0V nA Forward Transconductanceg fs V DS D Dynamic Total Gate ChargeQ g V DS =-15V, I D = -5.3A V GS = -10V nCGate-Source ChargeQ gs Gate-Drain ChargeQ gd Turn-On Delay Timet d(on) V DD = -15V, R L = 15Ω I D = -1A, V GEN = -10V R G = 6Ȋ ns Turn-On Rise Timet r Turn-Off Delay Timet d(off) Turn-Off Fall Timet f Input CapacitanceC iss V DS = -15V, V GS = 0V f = 1.0 MHz 745 pFOutput Capacitance C oss 440 Reverse Transfer CapacitanceC rss 120 Source-Drain Diode Max. Diode Forward CurrentI S -2.6 A Diode Forward Voltage V SD I S -1.3 = -2.6A, V GS = 0V V Note :Pulse test: pulse width <= 300us, duty cycle<= 2% LP9435LT1G , S-LP9435LT1G Rev .O 2/4

LESHAN RADIO COMPANY, LTD. TYPICAL ELECTRICAL CHARACTERISTICS Rev .O 3/4 LP9435LT1G , S-LP9435LT1G

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 LESHAN RADIO COMPANY, LTD. Rev .O 4/4 LP9435LT1G , S-LP9435LT1G