LP9435ET1G LRC | Alldatasheet
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ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V I D -5.3 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 50 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 V Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) GENERAL FEATURES
- V DS = -30V,I D = -5.3A R DS(ON) < 85mΩ @ V GS =-4.5V R DS(ON) < 53mΩ @ V GS =-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package D G S GSSS 43 2 1 D D D D 5 6 78 9435 SOP-8 to p view LESHAN RADIO COMPANY, LTD. LP9435ET1G Rev .O 1/4
Gate Threshold Voltage V V =V GS(th) DS GS D =-250μA -1 -3 V V =-10V, I GS D =-5.3A 46 60 Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4.2A 70 90 mΩ Forward Transconductance g V =-15V,I FS DS D =-4.5A 4 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C 1040 PF lss Output Capacitance C oss 420 PF V =-15V,V Reverse Transfer Capacitance C rss DS GS =0V, F=1.0MHz 150 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t 19 26 nS d(on) Turn-on Rise Time t 9 13 nS r Turn-Off Delay Time t d(off) 74 105 nS V =-15V, ID=-1A, DD V =-10V,R Turn-Off Fall Time t f GS GEN =6Ω 36 50 nS Total Gate Charge Q 22.5 29 nC g Gate-Source Charge Q gs 2 nC V =-15V,I Gate-Drain Charge Q gd DS D =-5.3A,V GS =-10V 6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V V =0V,I =-1.7A -1.2 V SD GS S Diode Forward Current (Note 2) I -1.9 A S LESHAN RADIO COMPANY, LTD. Rev .O 2/4
LESHAN RADIO COMPANY, LTD. SOP-8 Rev .O 4/4