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  1. FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Load Switches DC/DC Conversion Motor Drives 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) 5. THERMAL CHARACTERISTICS 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature LP8233DT1AG P-Channel 20-V (D-S) MOSFET -20 Unit VDS Marking Shipping LP8233DT1AG P33 3000/Tape&Reel V Drain-Source Voltage Gate-Source Voltage Device VGS ± 12 Symbol Limits Avalanche Current (VDS=20V,RL=25 L = 0.1mH) IAS Avalanche Energy (VDS=20V,RL=25 L = 0.1mH) EAS A mJ PD W -18 IDM -70 3.5 TJ , Tstg -55~+150 IS -4.9 A RθJA Parameter TA = 25 TA = 70 Power Dissipation (Note1) Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) (Note1) t 10 sec Steady State Maximum Junction-to-Ambient (Note1) TA = 25 TA = 70 ID Continuous Drain Current (Note1) -14 Symbol Limits Unit Parameter Pulsed Drain Current (Note2) Leshan Radio Company, LTD. Rev.A Nov. 2019 23.4 27.4

P-Channel 20-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Gate Threshold Voltage (VDS =VGS , ID =-250μA) Gate Leakage Current (VDS =0V, VGS =± 12V) Zero Gate Voltage Drain Current (VDS = -16 V, VGS = 0 V) (VDS = -16 V, VGS = 0 V, TJ = 55° C) On-State Drain Current (Note 3) (VDS = -5 V, VGS = -4.5 V) Drain-Source On-Resistance(Note 3) (VGS = -4.5 V, ID = -14 A) (VGS = -2.5 V, ID = -11 A) Forward Transconductance (Note 3) (VDS = -15 V, ID = -14.6 A) Diode Forward Voltage (Note 3) (IS = -2.5 A, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 784 804 gfs A S VSD V 6.5 8.5 9.5 nC ns pF Coss Crss (VDS = -10 V, VGS = -4.5 V,ID = -14.6 A) 238 (VDS = -10 V, RL = 0.7 Ω,ID = -14.6 A,VGEN = -4.5 V, RGEN = 6 Ω) Dynamic (Note 4) Qg Qgs Qgd td(on) tr td(off) tf Ciss 128 5310 (VDS = -15 V, VGS = 0 V, f = 1 MHz) 64.8 10.5 Max. Static Unit nA mΩ µA V Min. Typ. RDS(ON) IGSS Characteristic VGS(th) Symbol IDSS ID(on) -0.69 ± 100 -10 -30 Leshan Radio Company, LTD. Rev.A Nov. 2019 3.Pulse test: PW 300us duty cycle 2%. 4.Guaranteed by design, not subject to production testing. Gate-Resistance (VGS = 0 V, VDS=0V,f=1MHz) Rg 2.7 Ω -0.5 -0.7 -1.3

  1. On-Resistance vs. Drain Current 2. Transfer Characteristics 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5. Output Characteristics 6. Capacitance 0.005 0.01 0.015 0.02 RDS(on) On Resistance( ID Drain Current (A) 3V,3.5V,4V,4.5V,6V 1.8V 2.5V 0.1 0.2 0.3 ID Drain Current (A) VDS Drain to Source Voltage (V) 6V,4.5V,4V, 3.5V,3V 1.8V 2.5V 0.01 0.02 0.03 0.04 0.05 RDS(on) On Resistance( VGS Gate to Source Voltage (V) TJ = 25 C TJ = 25 C ID Drain Current (A) VGS Gate to Source Voltage (V) TJ = 25 C 0.01 0.1 100 0.2 0.4 0.6 0.8 1.2 IS Source Current (A) VSD Source to Drain Voltage (V) TJ = 25 C 1000 2000 3000 4000 5000 6000 7000 8000 Capacitance (pf) VDS Drain to Source Voltage (V) Ciss Coss Crss F = 1MHz ID = 14.6A LP8233DT1AG P-Channel 20-V (D-S) MOSFET Leshan Radio Company, LTD. Rev.A Nov. 2019 ELECTRICAL CHARACTERISTICS CURVES
  1. Gate Charge 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 8. Normalized On-Resistance Vs Junction Temperature 11. Normalized Thermal Transient Junction to Ambient 100 150 200 VGS Gate to Source Voltage (V) Qg Total Gate Charge (nC) 0.01 0.1 100 1000 0.1 100 1000 ID Current (A) VDS Drain to Source Voltage (V) 10 uS 100 uS 1 mS 10 mS 100 mS

1 SEC

10 SEC

100 SEC

0.001 0.01 0.1 100 1000 PEAK TRANSIENT POWER (W) t1 TIME (SEC) 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse R θ JA (t) = r(t) + R θ JA T J T A = P * R θ JA (t) Duty Cycle, D = t / t 0.5 1.5 -50 -25 100 125 150 RDS(on) On Resistance( (Normalized) TJ JunctionTemperature( P(pk) t t R θ JA = 81 C /W VDS = 10V ID = 14.6A LP8233DT1AG P-Channel 20-V (D-S) MOSFET Leshan Radio Company, LTD. Rev.A Nov. 2019 ELECTRICAL CHARACTERISTICS CURVES(Con.)

P-Channel 20-V (D-S) MOSFET 8.OUTLINE AND DIMENSIONS .SOLDERING FOOTPRINT Y 0.82 0.40 0.45 0.50 0.50 0.55 0.60 All Dimensions in mm 1.50 1.55 0.65BSC 0.57 0.62 0.67 0.50 0.55 0.50 D 2.95 3.00 3.05 0.30 0.35 0.40 A 0.60 0.65 0.70 0.00 0.03 0.05 b Dim Min Nor Max DFN3030-8B E 2.95 3.00 3.05 2.45 2.50 2.55 0.152REF. 0.44 0.49 0.54 2.80 2.20 3.20 e L 0.45 1.45 DFN3030-8B Dim (mm) C 0.65 0.70 X 0.60 0.40 Leshan Radio Company, LTD. Rev.A Nov. 2019