LP8217DT1AG LRC | Alldatasheet

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Technical content

  1. FEATURES
  • VDS = -20V RDS(ON)≤26mΩ,VGS@-4.5V,IDS@-7A RDS(ON)≤34mΩ,VGS@-2.5V,IDS@-5.6A
  • Low RDS(ON) trench technology.
  • Low thermal impedance.
  • Fast switching speed.
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS
  • Load Switches
  • DC/DC Conversion
  • Motor Drives 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) Continuous Drain Current (Note1) Pulsed Drain Current (Note2) Parameter TA = 25℃ TA = 70℃Power Dissipation (Note1) Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) (Note1) t ≤10 sec Steady StateMaximum Junction-to-Ambient (Note1) Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature PD W -8.8ID IDM -40 1.9 TJ , Tstg -55~+150 IS -5 A RqJA ℃/W Device VGS ± 8 Symbol Limits LP8217DT1AG 20V P-Channel (D-S) MOSFET -20 Unit VDS Marking Shipping LP8217DT1AG P17 3000/Tape&Reel VDrain-Source Voltage Gate-Source Voltage Leshan Radio Company, LTD. Rev.O Sep. 2017 1/3

20V P-Channel (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Drain-Source Breakdown Voltage (VGS = 0V, ID =-250uA) Gate Threshold Voltage (VDS =VGS , ID =-250μA ) Gate Leakage Current (VDS =0V, VGS =± 8V ) Zero Gate Voltage Drain Current (VDS =-16V, VGS =0V ) On-State Drain Current (Note 3) (VDS = -5 V, VGS = -4.5 V) Drain-Source On-Resistance (VGS = -4.5 V, ID = -7 A) Drain-Source On-Resistance (VGS = -2.5 V, ID = -5.6 A) Diode Forward Voltage (Note 3) (IS =-2.5 A, VGS =0V) Forward Transconductance (Note 3) (VDS = -15 V, ID = -7 A ) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) (Note 3) V(BR)DSS IGSS Characteristic mΩ ± 100 -20 µA VGS(th) - V V Symbol Min. IDSS Typ. Max. -0.4 Static Unit nA Dynamic (Note 4) Qg Qgs Qgd td(on) tr td(off) tf Ciss 35 - VGS = 0 V, f = 1 MHz) - 30 - - 4 - - 6 - nC ns pFCoss Crss (VDS = -10 V, VGS = -4.5 V,ID = -7 A) - 6 - - 12 - - 85 - (VDS = -10 V, RL = 1.4 Ω,ID = -7 A,VGEN = -4.5 V, RGEN = 6 Ω) ID(on) gfs -12 - - A - 8 - S VSD - V-1.3- Note: 3. Pulse test: PW ≤300us ,duty cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. - 126 - - 113 - Leshan Radio Company, LTD. Rev.O Sep. 2017 2/3

20V P-Channel (D-S) MOSFET 6.OUTLINE AND DIMENSIONS 7.SOLDERING FOOTPRINT e L 0.45 1.45 D 2.95 3.00 3.05 E 2.95 3.00 3.05 D1 2.45 2.50 2.55 A3 0.152REF. L1 0.44 0.49 0.54 Dim Min Nor Max DFN3030-8B 0.30 0.35 0.40 A 0.60 0.65 0.70 A1 0.00 0.03 0.05 b b1 0.40 0.45 0.50 b2 0.50 0.55 0.60 All Dimensions in mm 1.50 1.55 0.65BSC 0.57 0.62 0.67 0.50 0.55 Leshan Radio Company, LTD. Rev.O Sep. 2017 3/3 Y2 3.20 C 0.65 C1 0.70 X 0.60 X1 0.40 X2 0.50 X3 2.80 Y1 2.20 Dim (mm) DFN3030-8B Y 0.82