DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
- FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Load Switches DC/DC Conversion Motor Drives 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) 5. THERMAL CHARACTERISTICS 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature TA = 25 TA = 70 ID Continuous Drain Current (Note1) -14 Symbol Limits Unit Parameter Pulsed Drain Current (Note2) Parameter TA = 25 TA = 70 Power Dissipation (Note1) Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) (Note1) t 10 sec Steady State Maximum Junction-to-Ambient (Note1) PD W -18 IDM -70 3.5 TJ , Tstg -55~+150 IS -4.9 A RθJA Device VGS ± 12 Symbol Limits LP8207DT1AG 20V P-Channel (D-S) MOSFET -20 Unit VDS Marking Shipping LP8207DT1AG P07 3000/Tape&Reel V Drain-Source Voltage Gate-Source Voltage Leshan Radio Company, LTD. A EAS 28.8 mJ Avalanche Energy(L=0.1mH IAS Avalanche Current Rev.A May. 2020
20V P-Channel (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Drain-Source Breakdown Voltage (VGS = 0V, ID =-250uA) Gate Threshold Voltage (VDS =VGS , ID =-250μA) Gate Leakage Current (VDS =0V, VGS =± 12V) Zero Gate Voltage Drain Current (VDS =-20V, VGS =0V) Drain-Source On-Resistance(Note 3) (VGS = -4.5 V, ID = -10 A) (VGS = -2.5 V, ID = -8A (VGS = -1.8 V, ID = -4A) Diode Forward Voltage (Note 3) (IS = -1.0 A, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3.Pulse test: PW 300us duty cycle 2%. 4.Guaranteed by design, not subject to production testing. -1.5 -20 -0.5 ± 100 RDS(ON) V(BR)DSS IGSS Characteristic mΩ µA VGS(th) V V Symbol Min. IDSS Typ. Max. Static Unit nA Dynamic (Note 4) Qg Qgs Qgd td(on) tr td(off) tf Ciss 128 (VDS = -15 V, VGS = 0 V, f = 1 MHz) nC ns pF Coss Crss (VDS = -10 V, VGS = -4.5 V,ID = -14.6 A) 238 (VDS = -10 V, RL = 0.7 Ω,ID = -14.6 A,VGEN = -4.5 V, RGEN = 6 Ω) VSD V 6.6 8.5 8.2 Leshan Radio Company, LTD. Gate Resistance (VDS=0V,VGS=0V,f=1.0MHz) Rg 5.5 Ω 6.2 4061 361 318 Rev.A May. 2020
7.ELECTRICAL CHARACTERISTICS CURVES 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 RDS(on) (Ω) ID(A) VGS=1.8V VGS=2.5V VGS=4.5V 0.002 0.02 0.2 0.0 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=1.1V VGS=1.2V VGS=1.3V VGS=1.4V VGS=1.5V VGS=1.6V,10V ID vs. VGS ID vs. VDS IS vs. VSD RDS(on) vs. ID LP8207DT1AG 20V P-Channel (D-S) MOSFET Leshan Radio Company, LTD. Rev.A May. 2020
7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1000 2000 3000 4000 5000 6000 7000 Capacitance(pF) VDS(V) Ta=25 f=1.0MHz Ciss Coss Crss 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 0.002 0.004 0.006 0.008 0.010 0.012 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=2.5V,ID=1.0A VGS=4.5V,ID=1.0A 0.00 0.01 0.02 0.03 0.04 0.05 RDS(on) (Ω) VGS(V) ID=1.0A 150 RDS(on) vs. Tj RDS(on) vs. VGS VGSTH vs. Tj Capacitance LP8207DT1AG 20V P-Channel (D-S) MOSFET Leshan Radio Company, LTD. Rev.A May. 2020
20V P-Channel (D-S) MOSFET 8.OUTLINE AND DIMENSIONS .SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A May. 2020 A Min Dim DFN3030-8B 0.62 0.44 0.49 0.54 2.95 2.45 L 0.45 1.45 1.55 2.50 1.50 0.55 2.55 3.05 3.00 0.57 0.00 e 0.30 0.152REF. All Dimensions in mm 0.45 0.40 0.67 0.65BSC 0.50 0.50 D 2.95 E 3.05 0.60 0.50 0.40 0.05 0.70 Max b Nor 0.65 0.03 0.35 0.55 3.00 0.60 Dim (mm) DFN3030-8B 2.20 3.20 C 0.65 0.70 X 0.60 0.40 0.50 2.80 Y 0.82 TOP VIEW BOTTOM VIEW SIDE VIEW E D b e A L X C C Y