LP750SOT89-2

LP750SOT89 FILTRONIC | Alldatasheet

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Technical content

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 1/18/02 Fax: (408) 970-9950 Email: sales@filss.com

• FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0.7 dB Noise Figure ♦ 40 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current LP750SOT89-1 IDSS VDS = 2 V; VGS = 0 V 180 230 mA LP750SOT89-2 231 265 mA Power at 1-dB Compression P-1dB VDS = 5 V; IDS = 50% IDSS 24 26 dBm Power Gain at 1-dB Compression G-1dB VDS = 5 V; IDS = 50% IDSS 15.5 17 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; PIN = 10 dBm 55 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS 0.7 dB Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 50% IDSS; PIN = -7 dBm 40 dBm Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 450 mA Transconductance GM VDS = 2 V; VGS = 0 V 170 220 mS Gate-Source Leakage Current IGSO VGS = -5 V 5 45 µA Pinch-Off Voltage VP VDS = 2 V; IDS = 4 mA -0.25 -1.2 -2.0 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 4 mA -10 -12 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 4 mA -10 -13 V frequency=1.8 GHz

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 1/18/02 Fax: (408) 970-9950 Email: sales@filss.com

• ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 7 V Gate-Source Voltage VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 7.5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 175 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — -65 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 1.75 W Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Power Dissipation defined as: PTOT ≡ (PDC + PIN) – P OUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 1.75W – ( 0.012W/°C) x TPACK where TPACK = source tab lead temperature
• This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
• OPTIMUM POWER OUTPUT MATCHING Load State Frequency (GHz) Magnitude Phase 1.8 0.39 -168° 2.2 0.37 -147° 2.5 0.43 -135°
• HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
• APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 1/18/02 Fax: (408) 970-9950 Email: sales@filss.com

• PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice.