FMS2016QFN FILTRONIC | Alldatasheet
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Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ 3x3x0.9mm Packaged pHEMT Switch ♦ NiPdAu finish for Military and High reliability applications ♦ Excellent low control voltage performance ♦ Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels ♦ Very high isolation: >29dB at 1.8GHz ♦ Very low Insertion loss: 0.65dB at 1.8GHz ♦ Very low control current Functional Schematic Description and Applications: The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5 µm switch process technology, which offers excellent performance optimised for switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary. Electrical Specifications: (TAMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Min Typ Max Units Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz <0.55 <0.65 dB dB Return Loss 0.5 – 2.5 GHz 20 dB Isolation RF1 – RF3 and RF2 – RF4 0.5 – 1.0 GHz 1.0 – 2.0 GHz dB dB Isolation RF1 – RF2 0.5 – 1.0 GHz 1.0 – 2.0 GHz dB dB Isolation RF3 – RF4 0.5 – 1.0 GHz 1.0 – 2.0 GHz dB dB 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75 -75 dBc dBc 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle -75 -75 dBc dBc Switching speed : Trise, Tfall Ton, Toff 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF <0.3 1.0 µs µs Control Current +35dBm RF input @1GHz <10 µA Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) ANT RF1 RF3 RF2 RF4
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 Absolute Maximum Ratings: Parameter Symbol Absolute Maximum Max Input Power Pin +38dBm Control Voltage V ctrl +5V Operating Temp T oper -40°C to +100°C Storage Temp T stor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: Switch State ANT TO RF1 ANT TO RF2 ANT TO RF1 ANT TO RF2 (A) HIGH LOW LOW LOW Insertion Loss Isolation Isolation Isolation (B) LOW HIGH LOW LOW Isolation Insertion Loss Isolation Isolation (C) LOW LOW HIGH LOW Isolation Isolation Insertion Loss Isolation (D) LOW LOW LOW HIGH Isolation Isolation Isolation Insertion Loss General Test Conditions: Bias Voltages LOW = 0V to 0.2V HIGH +2.5V to +5V Port Impedances 50Ω Off arm termination 50Ω
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN RETURN LOSS -40 -35 -30 -25 -20 -15 dB 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN INSERTION LOSS -1.2 -1.1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 dB 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN RF3 to RF4 ISOLATION -40 -35 -30 -25 -20 -15 -10 dB 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN RF1 to RF3 and RF2 to RF4 ISOLATION -40 -35 -30 -25 -20 -15 -10 dB 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN RF1 to RF2 ISOLATION -40 -35 -30 -25 -20 -15 -10 dB Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions VCTRL = 2.5V (high) & 0V (low), TAMBIENT = 25°C unless otherwise stated)
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 Pad Layout: *View from the top of the package QFN 12 Lead 3*3 Package Outline: ♦ NiPdAu finish for Military and High reliability applications Pin Number Description
1 RF1
2 GND
3 RF3
5 N/C
7 RF4
8 GND
9 RF2
11 ANT RF
12 Pin 1
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 0 . 511 . 522 . 533 . 5 Frequency (GHz) FMS2016QFN CALIBRATION BOARD INSERTION LOSS -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 dB 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) FMS2016QFN CALIBRATION BOARD RETURN LOSS -40 -35 -30 -25 -20 -15 dB Evaluation Board: Evaluation Board De-Embedding Data (Measured): BOM Label Component C10, C11, C12, C13 Capacitor, 470pF, 0603 C1,C2, C3,C4,C5 Capacitor, 100pF, 0402 C6, C7, C8, C9 Capacitor, 47pF, 0402 BOARD Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance. C11 C12 C10 C3 C4 C2 C1 C13
Preliminary Data Sheet 2.1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email: sales@filcsi.com Website: www.filtronic.com FMS2016QFN-1 Ordering Information: Part Number Description FMS2016-005 Packaged Die FMS2016-005-EB Packaged die mounted on evaluation board Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A as defined in Jedec Standard No.22-A114 (0-500V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Preferred Assembly Instructions: Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices) Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment.