DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

  1. FEATURES Low RDS(on) trench technology. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Load Switches. DC/DC Conversion. Motor Drives. 3. DEVICE MARKING AND RESISTOR VALUES 4. MAXIMUM RATINGS(Ta = 25º C) 5. THERMAL CHARACTERISTICS LP7337DT1WG P-Channel 30-V (D-S) MOSFET Shipping 3000/Tape&Reel Device Marking LP7337DT1WG LP7337 Leshan Radio Company, LTD. Rev.E Jun. 2020 Low thermal impedance. Fast switching speed. Gate to Source ESD protected. A Continuous Drain Current(Note 1) Power Dissipation(Note 1) Operating Junction Temperature TJ −55 ~+150 Tstg −55 ~+150 Unit Drain−to−Source Voltage VDSS -30 V Gate−to−Source Voltage VGS V Parameter Symbol Limits TA =25° C -18 TA =70° C -13 ID TA =25° C TA =70° C 3.2 PD W Storage Temperature Range Pulsed Drain Current (Note 2) IDM -200 ºC A valanche Current IAS A A valanche energy L=0.1mH EAS 61.25 mJ Symbol Units °C/W Parameter Maximum Junction-to-Ambient(Note 1) t <= 10 sec Steady State RθJA Limits 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature DFN5060-8B Maximum Junction-to-Case RθJ C 2.5 °C/W TC =25° C TC =25° C TC =70° C -70 -50 20/-25

P-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Leshan Radio Company, LTD. Gate-Source Threshold Voltage (VDS = VGS , ID = -250 uA) Gate-Body Leakage (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = -24 V, VGS = 0 V) (VDS = -24 V, VGS = 0 V, TJ = 55°C) Drain-Source On-Resistance(Note 3) (VGS = -10 V, ID = -13.6 A) (VGS = -4.5 V, ID = -10.9 A) Forward Transconductance(Note 3) (VDS = -15 V, ID = -13.6 A) Diode Forward Voltage(Note 3) (IS = -2.3 A, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3.Pulse test: PW 300µ s duty cycle 2%. 4.Guaranteed by design, not subject to production testing. gfs S 16.9 (VDS = -15 V, VGS = 0 V, f = 1 MHz) Ciss 4391 pF Coss 440 Crss 372 (VDS=-15 V, RL=1.2 Ω,ID=-

13.6 A,VGEN=-10

V,RGEN=6 Ω) td(on) ns tr td(off) 124 tf Dynamic(Note 4) (VDS = -15 V, VGS = -4.5 V,ID = -13.6 A) Qg Qgs Qgd 12.3 Characteristic Symbol Unit Static IDSS µA VGS(th) V -1.3 IGSS VSD V -0.76 -1.2 7.5 10.5 RDS(on) mΩ ±10 Min. Typ. -25 nC Max. µA V Drain-Source Breakdown Voltage V(BR)DSS (VGS=0 , ID = -250 uA) -30 Continuous Current(Note 1) IS A Plused Current(Note 1) ISM A Reverse Recovery Time (IF=IS,dIf/dt=100A/us) trr ns Qrr nC Reverse Recovery Charge (IF=IS,dIf/dt=100A/us) Source-Drain DIODE Ratings and Characteristics(Tc= 25°C) -25 -100 Rev.E Jun. 2020

7.ELECTRICAL CHARACTERISTICS CURVES 0.000 0.005 0.010 0.015 0.020 0.025 RDS(on) (Ω) ID(A) VGS=3.0V VGS=3.5V VGS=10V VGS=4.5V 0.01 0.1 100 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.0 1.0 2.0 3.0 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=2.0V VGS=2.2V VGS=2.4V VGS=2.6V VGS=2.8V VGS=3V,3.5V,4V,4.5V,6V,8V,10V IS vs. VSD ID vs. VDS ID vs. VGS RDS(on) vs. ID Leshan Radio Company, LTD. LP7337DT1WG P-Channel 30-V (D-S) MOSFET Rev.E Jun. 2020

7.ELECTRICAL CHARACTERISTICS CURVES(Con.) VGS(V) Qg(nC) VDS=15V ,ID=13.6A Ta=25 0.8 1.0 1.2 1.4 1.6 -50 -25 100 125 150 VGSth (V) Tj( ID=250uA 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=4.5V,ID=10.9A VGS=10V,ID=13.6A 0.00 0.05 0.10 0.15 0.20 RDS(on) (Ω) VGS(V) ID=13.6A 150 VGSTH vs. Tj RDS(on) vs. VGS RDS(on) vs. Tj VGS vs. Qg (VGS=4.5V) Leshan Radio Company, LTD. LP7337DT1WG P-Channel 30-V (D-S) MOSFET Rev.E Jun. 2020

7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.01 0.1 100 0.1 100 ID(A) VDS(V) 100us 1ms 10ms DC result 0.1 100 0.001 0.01 0.1 100 1000 Thermal Resistance Rth ( /W) Pulse time (s) 1000 2000 3000 4000 5000 6000 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Ciss Coss Crss VGS(V) Qg(nC) VDS=15V ,ID=13.6A Ta=25 Rth vs. tsw VGS vs. Qg VGS=10V) Capacitance SOA Leshan Radio Company, LTD. LP7337DT1WG P-Channel 30-V (D-S) MOSFET Rev.E Jun. 2020

7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.0001 0.001 0.01 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 100 1000 Notmalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Duty Cycle=50% 0.1% 25% Single Pulse Thermal Response Leshan Radio Company, LTD. LP7337DT1WG P-Channel 30-V (D-S) MOSFET Rev.E Jun. 2020

8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Y X C (3.75) DIM (mm) C 1.27 X 0.61 3.81 3.91 Y 1.27 1.27 0.77 4.52 6.61 DFN5060-8B DFN5060-8B All Dimensions in mm DIM MIN NOR MA X A 0.90 1.00 1.10 A1 0.00 0.02 0.05 E 6.00 6.15 6.30 E1 5.66 5.76 5.86 E2 3.40 3.50 3.60 D 4.95 5.10 5.25 D1 4.80 4.90 5.00 D2 3.76 3.86 3.96 b 0.30 0.35 0.40 B 0.36 0.41 0.46 L 0.56 0.66 0.76 e 1.27BSC c 0.254REF. 0 - 12 θ LP7337DT1WG P-Channel 30-V (D-S) MOSFET Rev.E Jun. 2020