LP6836 FILTRONIC | Alldatasheet

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Technical content

Phone: (408) 988-1845 http:// www.filss.com Revised: 1/18/01 Fax: (408) 970-9950 Email: sales@filss.com

  • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
  • DESCRIPTION AND APPLICATIONS The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/ InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP6836 also features Si 3 N 4 passivation and is available in P70 and SOT343 package types. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems and broad bandwidth amplifiers.
  • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current I DSS V DS = 2 V; V GS = 0 V 80 115 125 mA Power at 1-dB Compression P-1dB V DS = 8 V; I DS = 50% I DSS 24 25 dBm Power Gain at 1-dB Compression G-1dB V DS = 8 V; I DS = 50% I DSS 8.5 9.5 dB Power-Added Efficiency PAE V DS = 8 V; I DS = 50% I DSS 55 % Maximum Drain-Source Current I MAX V DS = 2 V; V GS = 1 V 190 mA Transconductance G M V DS = 2 V; V GS = 0 V 75 100 mS Gate-Source Leakage Current I GSO V GS = -5 V 1 10 µA Pinch-Off Voltage V P V DS = 2 V; I DS = 2 mA -0.25 -1.2 -2.0 V Gate-Source Breakdown Voltage Magnitude |V BDGS | I GS = 2 mA -11 -15 V Gate-Drain Breakdown Voltage Magnitude |V BDGD | I GD = 2 mA -12 -16 V Thermal Resistivity ΘJC 100 °C/W frequency=18 GHz DRAIN BOND PAD SOURCE BOND PAD (2x) DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) GATE BOND PAD

Phone: (408) 988-1845 http:// www.filss.com Revised: 1/18/01 Fax: (408) 970-9950 Email: sales@filss.com

  • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage V DS T Ambient = 22 ± 3 °C 10 V Gate-Source Voltage V GS T Ambient = 22 ± 3 °C -4 V Drain-Source Current I DS T Ambient = 22 ± 3 °C 2xI DSS mA Gate Current I G T Ambient = 22 ± 3 °C 18 mA RF Input Power P IN T Ambient = 22 ± 3 °C 180 mW Channel Operating Temperature T CH T Ambient = 22 ± 3 °C 175 ºC Storage Temperature T STG — -65 175 ºC Total Power Dissipation P TOT T Ambient = 22 ± 3 °C 1.4 W Notes:
  • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
  • Power Dissipation defined as: P TOT ≡ (P DC + P IN ) – P OUT , where P DC : DC Bias Power P IN : RF Input Power P OUT : RF Output Power
  • Absolute Maximum Power Dissipation to be de-rated as follows above 25 °C: P TOT = 1.4W – (0.0093W/ °C) x T HS where T HS = heatsink or ambient temperature.
  • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
  • ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290 °C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260 °C.
  • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. All information and specifications are subject to change without notice.