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P-Channel 60-V (D-S) MOSFET 1. Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed 2. Typical Applications: Load Switches DC/DC Conversion Motor Drives Leshan Radio Company, LTD. 1/3 3. ORDERING INFORMATION Device Marking Shipping LP4565T1G 4000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) Note: 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS Continuous Drain Current(Note 1) Power Dissipation(Note 1) TA =25° C TA =70° C ID PD IS º C/W Unit Maximum Junction-to-Ambient (Note 1) t 10S Steady State Parameter RθJA Symbol Max IDM -20 -1.6 A TA =25° C TA =70° C A W −55 ~+150 Operating Junction and Storage Temperature Range Symbol Limits Unit Drain−to−Source Voltage VDSS -60 Gate−to−Source Voltage VGS ±20 2.9 1.8 TJ , TSTG ºC Continuous Source Current (Diode Conduction)(Note 1) Pulsed Drain Current (Note 2) V V A Parameter LP4565T1G LP4565 SO Rev.A Nov. 2019
Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = -250 uA V Gate-Body Leakage I GSS V DS = 0 V, V GS = ±20 V ±10 uA V DS = -48 V, V GS = 0 V V DS = -48 V, V GS = 0 V, T J = 55°C -10 On-State Drain Current a I D(on) V DS = -5 V, V GS = -10 V -7.5 A V GS = -10 V, I D = -4 A V GS = -4.5 V, I D = -3.2 A 100 Forward Transconductance a g fs V DS = -15 V, I D = -4 A S Diode Forward Voltage a V SD I S = -2.1 A, V GS = 0 V -0.83 V Total Gate Charge Q g Gate-Source Charge Q gs 4.2 Gate-Drain Charge Q gd 3.1 Turn-On Delay Time t d(on) Rise Time t r Turn-Off Delay Time t d(off) Fall Time t f Input Capacitance C iss 1146 Output Capacitance C oss Reverse Transfer Capacitance C rss Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. pF V DS = -15 V, V GS = 0 V, f = 1 Mhz mΩ r DS(on) nC V DS = -30 V, R L = 7.5 Ω, I D = -4 A, V GEN = -10 V, R GEN = 6 Ω V DS = -30 V, V GS = -4.5 V, I D = -4 A Drain-Source On-Resistance a Zero Gate Voltage Drain Current Static uA 6. Electrical Characteristics I DSS Dynamic b ns Leshan Radio Company, LTD. 2/3 LP4565DT1AG 60V P-Channel Enhancement MOSFET Characteristic Symbol Min. Typ. Max. Unit Rev.A Nov. 2019
Leshan Radio Company, LTD. 5/5 60V P-Channel Enhancement MOSFET LP4565DT1AG Rev.A Nov. 2019 OUTLINE AND DIMENSIONS SOLDERING FOOTPRINT DIM MIN NOR MAX A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8