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- FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. 2. APPLICATION Load Switches DC/DC Conversion Motor Drives 3. ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS A Continuous Drain Current(Note 1) Power Dissipation(Note 1) Operating Junction Temperature TJ −55 ~+150 Tstg −55 ~+150 Unit Drain−to−Source Voltage VDSS -30 V Gate−to−Source Voltage VGS ± 25 V Parameter Symbol Limits LP4407T1G P-Channel 30-V (D-S) MOSFET Marking Shipping LP4407 4000/Tape&Reel We declare that the material of product are Halogen Free and compliance with RoHS requirements. Device LP4407T1G TA =25° C -18 TA =70° C -13 ID TA =25° C TA =70° C PD W Storage Temperature Range Pulsed Drain Current (Note 2) IDM -50 ºC Leshan Radio Company, LTD. A valanche Current IAS A A valanche energy L=0.1mH EAS mJ ESD protected Parameter Symbol Max Unit Maximum Junction-to-Ambient (Note 1) t 10S RθJA º C/W Steady State 3.1 Rev.B May. 2020
P-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS Gate-Source Threshold Voltage (VDS = VGS , ID = -250 uA) Gate-Body Leakage (VDS = 0 V, VGS = ±25 V) Zero Gate Voltage Drain Current (VDS = -24 V, VGS = 0 V) (VDS = -24 V, VGS = 0 V, TJ = 55°C) Drain-Source On-Resistance(Note 3) (VGS = -10 V, ID = -13.6 A) (VGS = -4.5 V, ID = -10.9 A) Diode Forward Voltage(Note 3) (IS = -2.3 A, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3.Pulse test: PW 300µ s duty cycle 2%. 4.Guaranteed by design, not subject to production testing. (VDS = -15 V, VGS = 0 V, f = 1 MHz) Ciss 4383 pF Coss 432 Crss 364 (VDS=-15 V, RL=1.2 Ω,ID=-
13.6 A,VGEN=-10
V,RGEN=6 Ω) td(on) ns tr td(off) 124 tf Dynamic(Note 4) (VDS = -15 V, VGS = -4.5 V,ID = -13.6 A) Qg Qgs 11.5 Qgd Characteristic Symbol Unit Static IDSS µA VGS(th) V -1.3 IGSS VSD V -1.2 7.5 10.5 RDS(on) mΩ ±10 Min. Typ. -25 nC Max. Leshan Radio Company, LTD. µA V Drain-Source Breakdown Voltage V(BR)DSS (VGS=0 , ID = -250 uA) -30 Continuous Current(Note 1) IS A Plused Current(Note 1) ISM A Reverse Recovery Time (IF=IS,dIf/dt=100A/us) trr ns Qrr nC Reverse Recovery Charge (IF=IS,dIf/dt=100A/us) Source-Drain Diodes Ratings and Characteristics(TC= 25°C) -25 -100 -0.76 Rev.B May. 2020
0.01 0.1 100 0.2 0.4 0.6 0.8 1.0 1.2 IS(A) VSD(V) 150 0.000 0.005 0.010 0.015 RDS(on)(Ω) ID(A) VGS=4.5V VGS=6.0V VGS=10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=2.0V VGS=2.3V VGS=2.6V VGS=2.9V VGS=3.0V VGS=3.5V,VGS=4.5V,VGS=10V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID P-Channel 30-V (D-S) MOSFET ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. LP4407T1G Rev.B May. 2020
0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 100 125 150 VGS(th)(V) Tj( ID=250uA 0.004 0.006 0.008 0.010 0.012 0.014 0.016 -50 -25 100 125 150 RDS(on)(Ω) Tj( VGS=4.5V,ID=10.9A VGS=10V,ID=13.6A 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 RDS(on)(Ω) VGS(V) ID=13.6A ,25 ,150 RDS(on) vs. VGS RDS(on) vs. Tj VGSth vs. Tj P-Channel 30-V (D-S) MOSFET ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. LP4407T1G Rev.B May. 2020
P-Channel 30-V (D-S) MOSFET Leshan Radio Company, LTD. LP4407T1G OUTLINE AND DIMENSIONS SOLDERING FOOTPRINT DIM MIN NOR MAX A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8 Rev.B May. 2020