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- FEATURES VDS = -20V RDS(ON) 26mΩ,VGS@-4.5V,IDS@-5A RDS(ON) 24mΩ,VGS@-2.5V,IDS@-4A Low RDS(ON) trench technology. Low thermal impedance. Fast switching speed. We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Load Switches DC/DC Conversion Motor Drives 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) Continuous Drain Current (Note1) Pulsed Drain Current (Note2) Parameter TA = 25 TA = 70 Power Dissipation (Note1) Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) (Note1) t 10 sec Steady State Maximum Junction-to-Ambient (Note1) Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature PD W ID IDM -30 1.9 TJ , Tstg -55~+150 IS A RqJA Device VGS ±10 Symbol Limits LP4217T1G 20V P-Channel (D-S) MOSFET -20 Unit VDS Marking Shipping LP4217T1G 4000/Tape&Reel V Drain-Source Voltage Gate-Source Voltage Leshan Radio Company, LTD. SO LP4217 Rev.A Nov. 2019
20V P-Channel (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Drain-Source Breakdown Voltage (VGS = 0V, ID =-250uA) Gate Threshold Voltage (VDS =VGS , ID =-250μA ) Gate Leakage Current (VDS =0V, VGS =±10V ) Zero Gate Voltage Drain Current (VDS =-16V, VGS =0V ) On-State Drain Current (Note 3) (VDS = -5 V, VGS = -4.5 V) Drain-Source On-Resistance (VGS = -4.5 V, ID = -7 A) Drain-Source On-Resistance (VGS = -2.5 V, ID = -5.6 A) Diode Forward Voltage (Note 3) (IS =-2.5 A, VGS =0V) Forward Transconductance (Note 3) (VDS = -15 V, ID = -7 A ) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) (Note 3) V(BR)DSS IGSS Characteristic mΩ ±10 -20 µA VGS(th) -0.9 V V Symbol Min. IDSS Typ. Max. -0.4 Static Unit uA Dynamic (Note 4) Qg Qgs Qgd td(on) tr td(off) tf Ciss 1900 (VDS = -15 V, VGS = 0 V, f = 1 MHz) nC ns pF Coss Crss (VDS = -10 V, VGS = -4.5 V,ID = -7 A) (VDS = -10 V, RL = 1.4 Ω,ID = -7 A,VGEN = -4.5 V, RGEN = 6 Ω) ID(on) gfs -12 A S VSD V -1.3 Note: 3. Pulse test: PW 300us ,duty cycle 2%. 4. Guaranteed by design, not subject to production testing. 252 226 Leshan Radio Company, LTD. Rev.A Nov. 2019
20V P-Channel (D-S) MOSFET Leshan Radio Company, LTD. Rev.A Nov. 2019 LP4217T1G OUTLINE AND DIMENSIONS SOLDERING FOOTPRINT DIM MIN NOR MAX A 1.75 A1 0.10 0.15 0.20 A2 1.35 1.45 1.55 b 0.33 0.42 0.51 c 0.15 0.22 0.29 D 4.77 4.90 5.03 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e L 0.46 0.66 0.86 L1 0.85 1.05 1.25 θ0 º 5 º 8 º B 0.55 H 0 0.05 0.10 All Dimensions in mm SOP8 1.27BSC DIM (mm) X 0.60 Y 1.55 C1 5.40 C2 1.27 SOP8