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  1. FEATURES VDS =-20V Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM We declare that the material of product compliance with RoHS requirements and Halogen Free. 2. APPLICATIONS Simple Drive Requirement Small Package Outline Surface Mount Device 3. DEVICE MARKING AND ORDERING INFORMATION LP2128LT3G PA2 10000/Tape&Reel LP2128LT1G 20V P-Channel Enhancement-Mode MOSFET Device Marking Shipping LP2128LT1G PA2 3000/Tape&Reel SOT23(TO 236) Leshan Radio Company, LTD. 4. MAXIMUM RATINGS(Ta = 25º C) – Continuous TA = 25°C – Pulsed 5. THERMAL CHARACTERISTICS Total Device Dissipation FR–5 Board@Ta=25 Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1.Repetitive Rating: Pulse width limited by the maximum junction temperature Parameter Symbol Limits Drain Current(Note 1) A ID Unit Drain–Source Voltage VDSS -20 V Gate–to–Source Voltage VGS ± 12 V PD 1100 mW RΘJA 110 º C/W IDM -24 Parameter Symbol Limits Unit Avalanche Current(L=0.1mH) Avalanche Energy(L=0.1mH) TJ,Tstg −55 +150 º C IAS A EAS 7.3 mJ Rev.B Jan. 2020

20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -6.4 V) Gate–Body Leakage Current (VGS = ± 12 V,VDS=0V) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS = -4.5 V, ID = -2.4 A) (VGS = -2.5 V, ID = -2 A) (VGS = -1.8 V, ID = -1 A) Forward Transconductance (VDS = -5V, ID = -3.5A) On-State Drain Current (VDS –5 V, VGS = –4.5 V) Max. Diode Forward Current Diode Forward Voltage (IS = -1.6A, VGS = 0V) Typ. Max. Unit VBRDSS V -20 Symbol Min. μA IGSS nA ± 100 Characteristic Static gfs S 8.5 RDS(on) mΩ VGS(th) V -0.45 -0.9 IDSS Source-Drain Diode VSD -1.6 A Dynamic(Note 2) A (VDS –5 V, VGS = –2.5 V) ID(on) IS V -1.2 Leshan Radio Company, LTD. Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -4 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -4 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -4 V) Total Gate Charge Gate to Source Charge Gate to Drain Charge Gate Resistance (VDS=0V,VGS=0V,f=1.0MHz) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%. ns tr 14.4 Crss pF Switching(Note 2) td(off) tf td(on) 6.2 (VDD=-4V,RL=4Ω,RG=6.2 Ω,VGEN=-4.5V,ID=-1A) (VDS=-10V,VGS=- 4.5V,ID=-2.4A) Qg Qgs 1.7 Qgd 2.5 nC Rg 9.3 Ω Ciss pF 1038 Coss pF 110 Rev.B Jan. 2020

20V P-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. 7.ELECTRICAL CHARACTERISTICS CURVES 0.01 0.02 0.03 0.04 0.05 0.06 RDS(on) (Ω) ID(A) VGS=1.8V VGS=2.5V VGS=4.5V 0.001 0.01 0.1 0.2 0.4 0.6 0.8 1.0 IS(A) VSD(V) 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A) VGS(V) VDS=10V 150 ID(A) VDS(V) VGS=1.0V VGS=1.1V VGS=1.2V VGS=1.3V VGS=1.4V VGS=1.5V,2V,5V ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID Rev.B Jan. 2020

20V P-Channel Enhancement-Mode MOSFET Leshan Radio Company, LTD. 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 200 400 600 800 1000 1200 1400 1600 1800 Capacitance(pF) VDS(V) f=1.0MHz Ta=25 Ciss Coss Crss 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -50 -25 100 125 150 VGSth(V) Tj( ID=250uA 0.01 0.02 0.03 0.04 0.05 -50 -25 100 125 150 RDS(on) (Ω) Tj( VGS=2.5V,ID=2.0A VGS=4.5V,ID=2.4A 0.1 0.2 0.3 0.4 0.5 RDS(on) (Ω) VGS(V) ID=2.4A 150 RDS(on) vs. VGS RDS(on) vs. Tj Capacitance VGSth vs. Tj Rev.B Jan. 2020

20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. .SOLDERING FOOTPRINT DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.044 0.01 0.06 0.1 0.001 0.002 0.004 A 0.89 1.11 0.035 0.04 0.02 c 0.09 0.13 0.18 0.003 0.005 0.007 b 0.37 0.44 0.5 0.015 0.018 0.12 E 1.20 1.3 1.4 0.047 0.051 0.055 D 2.80 2.9 3.04 0.11 0.114 0.081 L 0.10 0.2 0.3 0.004 0.008 0.012 e 1.78 1.9 2.04 0.07 0.075 0.029 H E 2.10 2.4 2.64 0.083 0.094 0.104 0.35 0.54 0.69 0.014 0.021 10° θ --- 10° --- Leshan Radio Company, LTD. Rev.B Jan. 2020