LP0404N3T5G LRC | Alldatasheet
Document overview
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Technical content
- FEATURES
- VDS = -20V RDS(ON)≤0.48Ω,VGS@-4.5V,IDS@-780mA RDS(ON)≤0.67Ω,VGS@-2.5V,IDS@-660mA RDS(ON)≤0.95Ω,VGS@-1.8V,IDS@-100mA RDS(ON)≤2.2Ω,VGS@-1.5V,IDS@-100mA
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
- We declare that the material of product compliance with RoHS requirements and Halogen Free.
- S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) Note 1: Surface Mounted on 1” x 1” FR4 Board. Limits -20 -1.4 Parameter Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) Steady State ID A Symbol VGS V LP0404N3T5G 20V, P-Channel (D-S) MOSFET Unit VDSS Marking Shipping LP0404N3T5G T5 10000/Tape&Reel V Device Leshan Radio Company, LTD. Rev.D Nov 2018 1/5 ESD protection > 2kV HBM.●
20V, P-Channel (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Drain-Source Breakdown Voltage (VGS = 0V, ID =-250uA) Gate Threshold Voltage (VDS =VGS , ID =-250μA ) Gate Leakage Current (VDS =0V, VGS =±4.5V ) Zero Gate Voltage Drain Current (VDS =-16V, VGS =0V ) Drain-Source On-Resistance (VGS=-4.5V,ID=-780mA) Drain-Source On-Resistance (VGS=-2.5V,ID=-660mA) Drain-Source On-Resistance (VGS=-1.8V,ID=-100mA) Drain-Source On-Resistance (VGS=-1.5V,ID=-100mA) Diode Forward Voltage (IS =-350mA, VGS =0V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Note 2: Pulse test; pulse width ≤ 300µs, duty cycle≤ 2%. (VDS =-16V, VGS =-4.5V, ID =-200mA) nC (VDD =-10V, RL =50Ω,VGEN =- 5V,RG =10Ω,ID =-200mA) ns tf - 81.2 - Dynamic 0.48 - 0.45 0.67 VSD - -0.83 -1.2 V - 0.72 0.95 - 1.3 2.2 RDS(ON) Ω - 0.34 - - ±10 µA - - -1 µA -20 - - V -0.4 -0.92 -1.2 V Static Characteristic V(BR)DSS Unit (VDS = -16 V, VGS = 0 V, f = 1 MHz) Ciss - 152 Coss - 18.5 Crss - 6 pF- Qgs Qgd td(on) tr td(off) 2.8 24.2 Qg IDSS IGSS VGS(th) Symbol Min. Typ. Max. 2.1 - 0.5 - 51.3 - 246 - Leshan Radio Company, LTD. 2/5Rev.D Nov 2018
20V, P-Channel (D-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. 3/5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 2 4 ID,Drain Current(A) VDS,Drain to Source Voltage(V) Ta=25℃ VGS=1.2V VGS=1.3V VGS=1.4V VGS=1.5V VGS=2V,2.5V,3V 0.1 0.2 0.3 0.4 0.5 0.6 RDS(on),On resistance (Ω) ID,Drain Current(A) Ta=25℃ VGS=1.8V VGS=4.5V VGS=2.5V 0.001 0.01 0.1 0.2 0.4 0.6 0.8 1 IS,Forward Current(A) VSD,Diode Forward Voltage(V) -55℃150℃ 25℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 ID,Drain Current(A) VGS,Gate to Source Voltage(V) VDS=10V -55℃150℃ 25℃ ID vs. VDS ID vs. VGS IS vs. VSD RDS(on) vs. ID Rev.D Nov 2018
20V, P-Channel (D-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. 4/5 100 120 140 160 0 5 10 15 20 Capacitance(pF) VDS,Drain to Source Voltage(V) f=1.0MHz Ta=25℃ Ciss Coss Crss 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 VGSTH Threshold Voltage (V) Tj,Temperature(℃) ID=250uA 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 RDS(on) On resistance (Ω) Tj,Temperature(℃) VGS=2.5V,ID=660mA VGS=4.5V,ID=780mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 RDS(on)On Resistance (Ω) VGS,Gate to Source Voltage(V) ID=780mA 150℃ -55℃ 25℃ RDS(on) vs Tj VGSTH vs. Tj Capacitance RDS(on) vs. VGS Rev.D Nov 2018
20V, P-Channel (D-S) MOSFET 7.OUTLINE AND DIMENSIONS DIM 8.SOLDERING FOOTPRINT Dimensions 0.55 0.20 0.40 0.40 1.10 0.70 (mm) 0.32 0.53 0.22 0.29 0.27L1 L 0.24 D e 0.50 SOT883 E A1 0 - 0.05 b A 0.44 0.49 0.10 0.15 0.20 0.54 0.43 0.48 X Y MAX 1.05 0.19 0.650.60 MIN TYP 0.95 1.00 0.34 - 0.64 c All Dimensions in mm Leshan Radio Company, LTD. 5/5Rev.D Nov 2018