LMA246 FILTRONIC | Alldatasheet
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Technical content
LMA246LOW NOISE PHEMT MMIC Phone: (408) 988-1845 http:// www.filss.com Revised: 12/05/00 Fax: (408) 970-9950 Email: sales@filss.com
- FEATURES ♦ 9 GHz to 14 GHz Frequency Band ♦ 2.2 dB Noise Figure ♦ 25.5 dB Gain ♦ 19 dBm Output Power at Saturation ♦ +6 V Single Bias Supply
- DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to 14GHz. Reactively matched 3-stage amplifier provides 28dB nominal gain with 2dB typical noise figure and 1-dB gain compression power output of +17dBm that can be used as a pre-driver amplifier for phased array radar as well as commercial communications applications. Ground is provided to the circuitry through vias to the backside metallization.
- ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C (V DD = +6.0V, Z IN = Z OU T = 50 Ω ) Parameter Symbol Test Conditions Min Typ Max Units Frequency Band F 9 14 GHz Small Signal Gain S 21 R S = 12/12/5 Ω at 50% I DSS 24 25.5 dB Saturated Drain Current I DSS R S = 0/0/0 Ω 120 260 360 mA Small Signal Gain Flatness ΔS 21 ±0.5 ±1.0 dB Noise Figure NF 50% I DSS 2.2 3.0 dB Power at 1-dB Compression P-1dB R S = 12/12/3 Ω at 60% I DSS 17 dBm Power at Saturation P SAT 19 dBm Input Return Loss S 11 -14 dB Output Return Loss S 22 -12 dB Reverse Isolation S 12 -60 dB
LMA246LOW NOISE PHEMT MMIC Phone: (408) 988-1845 http:// www.filss.com Revised: 12/05/00 Fax: (408) 970-9950 Email: sales@filss.com
- ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain Voltage V D T Ambient = 22 ± 3 °C 7 V Operating Current I OP T Ambient = 22 ± 3 °C 360 mA RF Input Power P IN T Ambient = 22 ± 3 °C 15 dBm Total Power Dissipation P TOT T Ambient = 22 ± 3 °C 2.5 W Channel Operating Temperature T CH T Ambient = 22 ± 3 °C 150 ºC Storage Temperature T STG — -65 165 ºC Maximum Assembly Temperature (1 min. max.) T MAX — 300 ºC Notes:
- Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
- Recommended Continuous Operating Limits should be observed for reliable device operation.
- Power Dissipation defined as: P TOT ≡ (P DC + P IN ) – P OUT , where P DC : DC Bias Power P IN : RF Input Power P OUT : RF Output Power
- This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
LMA246LOW NOISE PHEMT MMIC Phone: (408) 988-1845 http:// www.filss.com Revised: 12/05/00 Fax: (408) 970-9950 Email: sales@filss.com
- ASSEMBLY DRAWING Notes:
- Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended.
- The recommended die attach is an eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290°C. Maximum time at temperature is 1 minute. Use of forming gas (90% N 2 , 10% H 2 ) for best results.
- Bond on bond or stitch bond acceptable.
- Conductor over conductor acceptable. Conductors must not short.
LMA246LOW NOISE PHEMT MMIC Phone: (408) 988-1845 http:// www.filss.com Revised: 12/05/00 Fax: (408) 970-9950 Email: sales@filss.com
- MECHANICAL OUTLINE Notes:
- All units are in microns (µm).
- All bond pads are 100 X 100 µm 2 .
- Bias pad (V DD ) size is 100 X 121.5 µm 2 .
- Unless otherwise specified.
- HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice.