LMA184 FILTRONIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- 5.5dB Typical Noise Figure
- 7.5dB Typical Gain
- 15dBm Saturated Output Power
- 12dB Inpu t/Output Return Loss Typical
- 2-18GHz Frequency Bandwidth
- +4 Volts Dual Bias Supply
- DC Decoupled RF Output
- Chip Size : 1.62mm X2.38mm (.064”X.094”)
- Chip Thickness : 100µm
- Pad Dimension : 100µm 2
Description
The Filtronic LMA184 is a GaAs monolithic distributive amplifier which operates from 2 to 18GHz. This LMA184 amplifier produces a typical gain of 7.5dB and a noise figure of less than 5.5dB. The LMA184 is suitable for gain block, low noise and driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD =+4.0V, Zin=Zout=50Ω ) Absolute Maximum Ratings Notes : 1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2. Specifications subject to change without notice. DSS 008 WC Limit Symbol Parameter Test Conditions Min. Typ. Max. Units BW Operating Bandwidth 2 18 GHz S21 Small Signal Gain V D =4V, Ids=.5Idss 6 7.5 dB Idss Drain Current at Saturation 60 120 180 mA ΔS21 Small Signal Gain Flatness ±.5 ±1d B NF Noise Figure @ .5Idss 5.5 7 dB RLin Input Return Loss -14 -10 dB RLout Output Return Loss -14 -10 dB S12 Reverse Isolation -13 -16 dB P-1dB 1-dB Gain Compression Power 10 12 dBm Symbol Parameter/Conditions Min. Max. Units Vdd Drain Supply Voltage 8 Volts Idd Total Drain Current 180 mA Pin RF Input Power 20 dBm Pt Power Dissipation 1.5 W Tch Operating Channel Temperature 150 °C Tstg Storage Temperature -65 165 °C Tmax. Max. Assembly Temp. (1 min. max.) 300 °C
Filtronic 2-18 GHz MESFET Amplifier Solid State LMA184 Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.comFax: (408) 970-9950 Assembly Diagram Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. 3.) Bond on bond or stitch bond acceptable. 4.) Conductor over conductor acceptable. Conductors must not short. DSS 008 WC
Filtronic 2-18 GHz MESFET Amplifier Solid State LMA184 Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.comFax: (408) 970-9950 Mechanical Outline Notes: 1.) Unless Otherwise specified. 2.) All units are in micron (µm). 3.) All bond pads are 100 X 100 µm 4.) Bias pad (VDD ) size is 100 X 121.5 µm2. DSS 008 WC