LMA110A FILTRONIC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- 2.7dB Typical Noise Figure
- 23dB Typical Gain
- 12dBm Saturated Output Power
- 12dB Inpu t/Output Return Loss Typical
- 0.5-6GHz Frequency Bandwidth
- +8.5 Volts Dual Bias Supply
- DC Decoupled RF Input and Output
- Chip Size : 1.62mm X1.62mm (.064”X.064”)
- Chip Thickness : 100µm
- Pad Dimension : 100µm 2
Description
The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of 23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD =+8.0V, Zin=Zout=50Ω ) Absolute Maximum Ratings Notes: 1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2. Specifications subject to change without notice. DSS 004 WD Limit Symbol Parameter Test Conditions Min. Typ. Max. Units BW Operating Bandwidth 0.5 6 GHz S21 Small Signal Gain V D =8V, Vg=-.85V 20 23 dB Ids Drain Operating Current 60 100 150 mA ΔS21 Small Signal Gain Flatness ±0.4 ±1d B NF Noise Figure @ 50% Idss 2.7 3.5 dB RLin Input Return Loss -10 dB RLout Output Return Loss -10 dB S12 Reverse Isolation -35 -45 dB P-1dB 1-dB Gain Compression Power 7 10 dBm Symbol Parameter/Conditions Min. Max. Units Vdd Drain Supply Voltage 12 Volts Idd Total Drain Current 150 mA Pin RF Input Power 24 dBm Pt Power Dissipation 1.8 W Tch Operating Channel Temperature 150 °C Tstg Storage Temperature -65 165 °C Tmax. Max. Assembly Temp. (1 min. max.) 300 °C
Filtronic .5-6 GHz MESFET Amplifier Solid State LMA110A Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.comFax: (408) 970-9950 Assembly Diagram Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. 3.) Bond on bond or stitch bond acceptable. 4.) Conductor over conductor acceptable. Conductors must not short. DSS 004 WD
Filtronic .5-6 GHz MESFET Amplifier Solid State LMA110A Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.comFax: (408) 970-9950 Mechanical Outline Notes: 1.) Unless Otherwise specified. 2.) All units are in micron (µm). 3.) All bond pads are 100 X 100 µm 4.) Bias pad (VDD ) size is 100 X 121.5 µm2. DSS 004 WD