LIRFZ44N LRC | Alldatasheet

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Parameter Typ. Max. Units R θJC Junction-to-Case ––– 1.5 R θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R θJA Junction-to-Ambient ––– 62 Thermal Resistance S D G TO-220 l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 49 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 35 A I DM Pulsed Drain Current 160 P D C = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C V GS Gate-to-Source Voltage ± 20 V I AR Avalanche Current 25 A E AR Repetitive Avalanche Energy 9.4 mJ dv/dt Peak Diode Recovery dv/dt

5.0 V/ns

T J Operating Junction and -55 to + 175 T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET V DS =55V R DS(ON), Vgs@10V, Ids@25A =17.5mȤ

S D G Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the I SM Pulsed Source Current integral reverse (Body Diode) V SD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, I S = 25A, V GS = 0V t rr Reverse Recovery Time ––– 63 95 ns T J = 25°C, I F = 25A Q rr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S D Source-Drain Ratings and Characteristics 160 A Starting T J = 25°C, L = 0.48mH R G = 25Ω , I AS = 25A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: I SD ≤ 25A, di/dt ≤ 230A/µs, V DD ≤ V (BR)DSS T J ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to T J = 175°C . Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, I D = 250µA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient –––0.058 ––– V/°C Reference to 25°C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ V GS = 10V, I D = 25A „ V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = V GS , I D = 250µA g fs Forward Transconductance 19 ––– ––– S V DS = 25V, I D = 25A„ DS = 55V, V GS = 0V DS = 44V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA V GS = -20V Q g Total Gate Charge ––– ––– 63 I D = 25A Q gs Gate-to-Source Charge ––– ––– 14 nC V DS = 44V Q gd Gate-to-Drain ("Miller") Charge ––– ––– 23 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time ––– 12 ––– V DD = 28V t r D = 25A t d(off) Turn-Off Delay Time ––– 44 ––– R G = 12Ω t f GS = 10V, See Fig. 10 „ Between lead,––– ––– 6mm (0.25in.) from package and center of die contact C iss Input Capacitance ––– 1470 ––– V GS = 0V C oss Output Capacitance ––– 360 ––– V DS = 25V C rss Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 E AS Single Pulse Avalanche Energy ––– 530 150† mJ I AS = 25A, L = 0.47mH nH Electrical Characteristics @ T J = 25°C (unless otherwise specified) L D Internal Drain Inductance L S Internal Source Inductance ––– ––– S D G I GSS ns 4.5 7.5 I DSS Drain-to-Source Leakage Current LESHAN RADIO COMPANY, LTD. LIRFZ44N

Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 100 1000 0.1 100 µ s PULSE WIDTH T = 25 C J TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 100 µ s PULSE WIDTH T = 175 C J TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 V = 25V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 C J T = 175 C J -60 -40 -20 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V I GS D 10V 49A LESHAN RADIO COMPANY, LTD. LIRFZ44N

Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 100 500 1000 1500 2000 2500 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss g s g d , ds rss g d oss ds g d C iss C oss C rss Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS I D 25A V 11V DS V 27V DS V 44V DS 0.1 100 1000 0.0 0.6 1.2 1.8 2.4 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 C J T = 175 C J 1 10 100 VDS , Drain-toSource Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY R DS (on) 100µsec LESHAN RADIO COMPANY, LTD. LIRFZ44N

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) C D V DS 90% 10% V GS t d(on) t r t d(off) t f V DS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D V GS R G D.U.T. V GS V DD Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T P x Z + T J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) LESHAN RADIO COMPANY, LTD. LIRFZ44N

Q G Q GS Q GD V G Charge D.U.T. V DS I D I G 3mA V GS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors V GS Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current R G I AS 0.01 Ω t p D. U. T LV DS - V DD DRIVER A 15V 20V 100 125 150 175 120 180 240 300 Starting T , Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) J AS I D TOP BOTTOM 10A 18A 25A LESHAN RADIO COMPANY, LTD. LIRFZ44N

Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current V GS =10V V DD I SD Driver Gate Drive D.U.T. I SD Waveform D.U.T. V DS Waveform Inductor Curent D = P.W . Period R G V DD

  • dv/dt controlled by R G
  • I SD controlled by Duty Factor "D"
  • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
  • Low Stray Inductance
  • Ground Plane
  • Low Leakage Inductance Current Transformer Reverse Polarity of D.U.T for P-Channel V GS [ ] [ ] * V GS = 5.0V for Logic Level and 3V Drive Devices [ ] * Fig 14. For N-channel power MOSFETs LESHAN RADIO COMPANY, LTD. LIRFZ44N

LESHAN RADIO COMPANY, LTD. LIRFZ44N