LIMN10T1G LRC | Alldatasheet
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Device Marking Ordering Information LESHAN RADIO COMPANY, LTD. !Applications Ultra high speed switching !Features 1) Multiple diodes in one small surface mount package. 2) Diode characteristics are matched in the package. !Construction Silicon epitaxial planar 3) Pb Free Package is Available. !!!!Absolute maximum ratings (Ta=25°C) ∗1 Not to exceed 200mW per element. !!!!Electrical characteristics (Ta=25°C) LIMN10T1G LIMN10T3G N10 3000 Tape&Reel N10 10000 Tape&Reel TSOP-6 Parameter Symbol Limits Unit Peak reverse voltage V RM 80 V DC reverse voltage V R 80 V Peak forward current I FM 300 mA Mean rectifying current I O 100 mA surge Junction temperature Tj 150 °C Storage temperature T stg – 55 ~ +150 °C 4 A 300 Surge current (1us) I Power dissipation (total) Pd mW Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F – – 1.2 V I F =100mA Reverse current I R – – 0.1 µ AV R =70V Capacitance between terminals C T – 3.5 pF V R =6V , f=1MHz Reverse recovery time t rr R =6V , I F =5mA – – 4 ns V 1 32 6 45 Rev.O 1/3 S-LIMN10T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LIMN10T1G S-LIMN10T3G
LESHAN RADIO COMPANY, LTD. TSOP-6 456 D e b E A 0.05 (0.002) c L 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 SOLDERING FOOTPRINT* H E DIM A MIN NOM MAX MIN MILLIMETERS 0.90 1.00 1.10 0.035 INCHES A1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 D 2.90 3.00 3.10 0.114 E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 NOM MAX 2.50 2.75 3.00 0.099 0.108 0.118 H E 0° 10° 0° 10° Rev.O 3/3 LIMN10T1G, S-LIMN10T1G