LDTC143XET1G LRC | Alldatasheet

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zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C) Characteristics of built-in transistor LDTC143XET1G LDTC143XET3G M1 Parameter Symbol V CC − 7 to +20 100 200 150 −55 to +150 V V IN V mA mW I C P D Tj Tstg Unit C C Limits Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature 4.7 SC-89 Parameter Symbol V I(off) V I(on) V O(on) I I I O(off) R G I R f T Min. 2.5 3.29 1.7 0.1 4.7 2.1 250 0.3 0.3 1.8 0.5 6.11 2.6 V V CC =5V, I O =100µA V O =0.3V, I O =20mA I O I =10mA/0.5mA V I =5V V CC =50V, V I =0V V O =5V, I O =10mA V CE =10V, I E =−5mA, f=100MHz V mA µA kΩ MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency

LESHAN RADIO COMPANY, LTD. zElectrical characteristic curves LDTC143XET1G INPUT VOLTAGE : V I(on) (V) OUTPUT CURRENT : I O (A) 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 100 500m 200m 100m V O =0.3V Ta=−40°C 25°C 100°C Fig.1 Input voltage vs. output current (ON characteristics) INPUT VOLTAGE : V I(off) (V) OUTPUT CURRENT : Io (A) 0 3.0 10m 200µ 500µ 100µ 20µ 50µ 10µ V CC =5V Ta=100°C 25°C −40°C Fig.2 Output current vs. input voltage (OFF characteristics) V O =5V 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500 200 100 OUTPUT CURRENT : I O (A) DC CURRENT GAIN : G I Ta=100°C 25°C −40°C Fig.3 DC current gain vs. output current 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 500m 200m 100m 50m 20m 10m l O I =20 OUTPUT CURRENT : I O (A) OUTPUT VOLTAGE : V O(on) (V) Fig.4 Output voltage vs. output current Ta=100°C 25°C −40°C

LESHAN RADIO COMPANY, LTD. NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. SC-89